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Direct identification of interfacial degradation in blue OLEDs using nanoscale chemical depth profiling.
Trindade, Gustavo F; Sul, Soohwan; Kim, Joonghyuk; Havelund, Rasmus; Eyres, Anya; Park, Sungjun; Shin, Youngsik; Bae, Hye Jin; Sung, Young Mo; Matjacic, Lidija; Jung, Yongsik; Won, Jungyeon; Jeon, Woo Sung; Choi, Hyeonho; Lee, Hyo Sug; Lee, Jae-Cheol; Kim, Jung-Hwa; Gilmore, Ian S.
Afiliação
  • Trindade GF; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Sul S; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Kim J; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Havelund R; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Eyres A; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Park S; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Shin Y; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Bae HJ; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Sung YM; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Matjacic L; National Physical Laboratory, NiCE-MSI, Teddington, TW11 0LW, UK.
  • Jung Y; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Won J; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Jeon WS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Choi H; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Lee HS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Lee JC; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea.
  • Kim JH; Korea Research Institute of Material Property Analysis (KRIMPA), 712, Nongseo-dong 455, Yongin, 17111, Republic of Korea.
  • Gilmore IS; Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, 16678, Republic of Korea. jh1179.kim@samsung.com.
Nat Commun ; 14(1): 8066, 2023 Dec 06.
Article em En | MEDLINE | ID: mdl-38052834
ABSTRACT
Understanding the degradation mechanism of organic light-emitting diodes (OLED) is essential to improve device performance and stability. OLED failure, if not process-related, arises mostly from chemical instability. However, the challenges of sampling from nanoscale organic layers and interfaces with enough analytical information has hampered identification of degradation products and mechanisms. Here, we present a high-resolution diagnostic method of OLED degradation using an Orbitrap mass spectrometer equipped with a gas cluster ion beam to gently desorb nanometre levels of materials, providing unambiguous molecular information with 7-nm depth resolution. We chemically depth profile and analyse blue phosphorescent and thermally-activated delayed fluorescent (TADF) OLED devices at different degradation levels. For OLED devices with short operational lifetimes, dominant chemical degradation mainly relate to oxygen loss of molecules that occur at the interface between emission and electron transport layers (EML/ETL) where exciton distribution is maximised, confirmed by emission zone measurements. We also show approximately one order of magnitude increase in lifetime of devices with slightly modified host materials, which present minimal EML/ETL interfacial degradation and show the method can provide insight for future material and device architecture development.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Reino Unido

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Reino Unido
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