Solution-Induced Degradation of the Silicon Nanobelt Field-Effect Transistor Biosensors.

Lin, Jung-Chih; Zhou, Zhao-Yu; Cheng, Yi-Ching; Chang, I-Nan; Lin, Chu-En; Wu, Chi-Chang

Lin, Jung-Chih; Zhou, Zhao-Yu; Cheng, Yi-Ching; Chang, I-Nan; Lin, Chu-En; Wu, Chi-Chang.

Afiliação

Lin JC; Department of Integrated Chinese and Western Medicine, Chung Shan Medical University Hospital, and School of Medicine, Chung Shan Medical University, Taichung 40201, Taiwan.
Zhou ZY; Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan.
Cheng YC; Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan.
Chang IN; Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan.
Lin CE; Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan.
Wu CC; Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan.

Biosensors (Basel) ; 14(2)2024 Jan 25.

Article em En | MEDLINE | ID: mdl-38391984

Assuntos

Técnicas Biossensoriais; Nanofios; Técnicas Biossensoriais/instrumentação; Técnicas Biossensoriais/métodos; Nanofios/química; Reprodutibilidade dos Testes; Silício/química; Transistores Eletrônicos

Palavras-chave

NBFET; degradation; ion penetration; nanobelt biosensor; silicon nanobelt; surface functionalization

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Técnicas Biossensoriais / Nanofios Idioma: En Revista: Biosensors (Basel) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Suíça

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