Organic hole transport materials for high performance PbS quantum dot solar cells.

Zhang, Li; Wang, Shunqiang; Shi, Yi; Xu, Jiazi; Cao, Shuang; Deng, Zijian; Chen, Yong; Zhang, Junjie; Yang, Xichuan; Meng, Zhen; Fan, Quli; Sun, Bin

Zhang, Li; Wang, Shunqiang; Shi, Yi; Xu, Jiazi; Cao, Shuang; Deng, Zijian; Chen, Yong; Zhang, Junjie; Yang, Xichuan; Meng, Zhen; Fan, Quli; Sun, Bin.

Afiliação

Zhang L; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Wang S; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Shi Y; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Xu J; Tengzhou Huashu Intelligent Manufacturing Academy, Zaozhuang, 277599, Shandong, China.
Cao S; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Deng Z; Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China.
Chen Y; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Zhang J; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Yang X; Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China.
Meng Z; School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China.
Fan Q; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
Sun B; State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.

Chem Commun (Camb) ; 60(40): 5294-5297, 2024 May 14.

Article em En | MEDLINE | ID: mdl-38659410

ABSTRACT

ABSTRACT

We developed a triazatruxene-based hole transport material (HTM), 3Ka-DBT-3Ka, aiming to enhance band alignment and augment charge generation and collection in devices, as an alternative for 1,2-ethanedithiol (EDT). The PbS CQD solar cells employing 3Ka-DBT-3Ka as the HTM achieve a peak efficiency of 11.4%, surpassing devices employing the conventional PbS-EDT HTM (8.9%).

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chem Commun (Camb) Assunto da revista: QUIMICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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