High responsivity photodetector based on MEH-PPV/CsPbBr3heterojunction.

ABSTRACT

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr3heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr3perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr3heterojunction improves the energy level arrangement, and CsPbBr3QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity (R) of MEH-PPV/CsPbBr3heterojunction PD is 11.98 A W-1, the specific detectivity (D*) is 6.98 × 1011Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices.