Your browser doesn't support javascript.
loading
Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne.
Liu, Yingcong; Dai, Fulong; Bai, Haokun; Fan, Xiayue; Wang, Ruiqi; Zheng, Xuzhi; Xiong, Zhaozhao; Sun, Haochun; Liang, Zhuojian; Kang, Zhuo; Zhang, Yue.
Afiliação
  • Liu Y; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Dai F; Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Bai H; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Fan X; Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Wang R; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Zheng X; Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Xiong Z; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Sun H; Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Liang Z; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Kang Z; Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
  • Zhang Y; Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
J Am Chem Soc ; 146(21): 14593-14599, 2024 May 29.
Article em En | MEDLINE | ID: mdl-38718194
ABSTRACT
Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2024 Tipo de documento: Article