Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors.

Wang, Lixia; Xu, Shengming; Yang, Jiangang; Huang, Hui; Huo, Zhe; Li, Jing; Xu, Xin; Ren, Feng; He, Yunbin; Ma, Yaping; Zhang, Weifeng; Xiao, Xudong

Wang, Lixia; Xu, Shengming; Yang, Jiangang; Huang, Hui; Huo, Zhe; Li, Jing; Xu, Xin; Ren, Feng; He, Yunbin; Ma, Yaping; Zhang, Weifeng; Xiao, Xudong.

Afiliação

Wang L; School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China.
Xu S; School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China.
Yang J; School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China.
Huang H; School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China.
Huo Z; School of Materials Science & Engineering, Hubei University, Wuhan 430062, P. R. China.
Li J; School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China.
Xu X; School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China.
Ren F; Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, P. R. China.
He Y; Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, P. R. China.
Ma Y; State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China.
Zhang W; School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China.
Xiao X; School of Physical Science and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, P. R. China.

ACS Omega ; 9(24): 25429-25447, 2024 Jun 18.

Article em En | MEDLINE | ID: mdl-38911814

ABSTRACT

ABSTRACT

Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1-x N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs). This review comprehensively examines recent advancements in UWBG semiconductor-based SBPDs across various device architectures, encompassing photoconductors, metal-semiconductor-metal photodetectors, Schottky photodiodes, p-n (p-i-n) photodiodes, phototransistors, etc., with a systematic introduction and discussion of their operational principles. The current state of device performance for SBPDs employing these UWBG semiconductors is evaluated across different device configurations. Finally, this review outlines key challenges to be addressed, aiming to steer future research endeavors in this critical domain.

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Omega Ano de publicação: 2024 Tipo de documento: Article