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Bottom Contact Engineering for Ambient Fabrication of >25% Durable Perovskite Solar Cells.
Yuan, Ligang; Zou, Shibing; Zhang, Kaicheng; Huang, Peng; Dong, Yuyan; Wang, Jiarong; Fan, Kezhou; Lam, Man Yu; Wu, Xiao; Cheng, Wei; Tang, Ruijia; Chen, Wenhao; Liu, Weiqing; Wong, Kam Sing; Yan, Keyou.
Afiliação
  • Yuan L; Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China.
  • Zou S; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China.
  • Zhang K; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China.
  • Huang P; Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-University Erlangen-Nüremberg, Martensstraße 7, 91058, Erlangen, Germany.
  • Dong Y; Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu, 610031, China.
  • Wang J; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China.
  • Fan K; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China.
  • Lam MY; Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China.
  • Wu X; Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China.
  • Cheng W; Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, 999077, P. R. China.
  • Tang R; Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu, 610031, China.
  • Chen W; College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China.
  • Liu W; Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China.
  • Wong KS; Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China.
  • Yan K; Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China.
Adv Mater ; : e2409261, 2024 Aug 02.
Article em En | MEDLINE | ID: mdl-39092687
ABSTRACT
The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO2) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (VOC) exceeding 1.19 V. The VOC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T90 = 1000 h), higher than T80 = 1000 h for the control SnO2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China País de publicação: Alemanha

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Adv Mater Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China País de publicação: Alemanha