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Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration.
Chen, Xue; Xue, Haozhe; Wen, Yu; You, Kai; Jiang, Bei; Ding, Guanglong; Zhou, Kui; Zhao, Zherui; Yan, Yan; Zhang, Meng; Roy, Vellaisamy A L; Han, Su-Ting; Li, Feng; Kuo, Chi-Ching; Zhou, Ye.
Afiliação
  • Chen X; Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
  • Xue H; School of Physics, Changchun Normal University, Changchun 130032, P. R. China.
  • Wen Y; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • You K; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Jiang B; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Ding G; Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China.
  • Zhou K; State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China.
  • Zhao Z; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Yan Y; Zhuhai Construction Quality Supervision and Inspection Station, Zhuhai, 519015, P. R. China.
  • Zhang M; Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China.
  • Roy VAL; State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China.
  • Han ST; State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China.
  • Li F; School of Science and Technology, School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong 999077, P. R. China.
  • Kuo CC; Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China.
  • Zhou Y; College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
J Phys Chem Lett ; 15(39): 9979-9986, 2024 Oct 03.
Article em En | MEDLINE | ID: mdl-39315653
ABSTRACT
As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2024 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Chem Lett Ano de publicação: 2024 Tipo de documento: Article País de publicação: Estados Unidos