Broad tuning range, high power quantum cascade laser at λ ∼ 7.4 µm.

In this article, we report a high power quantum cascade laser (QCL) at λ∼7.4 µm with a broad tuning range. By carefully designing and optimizing the active region and waveguide structure, a continuous-wave (CW) output power up to 1.36 W and 0.5 W is achieved at 293 K and 373 K which shows the excellent temperature stability. A high wall-plug efficiency (WPE) of 8% and 13.6% in CW and pulsed mode at 293 K are demonstrated. The laser shows a characteristic temperature T0 of 224 K and T1 of 381 K over a temperature range from 283 K to 373 K. In addition, a far field of pure zero order transverse mode and a fairly wide external cavity (EC) tuning range (280 cm-1) from 6.54 µm to 8 µm are achieved in pulsed operation. In addition, an EC single mode output power of 226 mW is obtained under CW operation at 293K.

GaSb surface grating distributed feedback interband cascade laser emitting at 3.25 µm.

A second-order distributed feedback interband cascade laser emitting at 3.25 µm was designed, grown, and fabricated. By coherent epitaxy of a GaSb cap layer instead of the conventional thin InAs cap on top of the laser structure, a high-quality surface grating was made of GaSb and gold. Enough coupling strength and a significant inter-modal loss difference were predicted according to the simulation within the framework of couple-wave theory. Lasers having 2-mm-long cavities and 4.5-µm-wide ridges with high-/anti-reflection coatings were fabricated. The continuous-wave threshold current and maximum single-mode output power were 60 mA and 24 mW at 20°C, respectively. The output power of 5 mW was still kept at 55°C. Continuous tuning free from mode hopping and high single-mode suppression ratios (>20 dB) were realized at all injection currents and heat-sink temperatures, covering a spectral range of over 20 cm-1.

Low voltage-defect quantum cascade lasers based on excited-states injection at λ ∼ 8.5 µm.

A quantum cascade laser emitting at λ∼8.5 µm based on the excited-state injection is presented. The operating voltage is reduced for a low-voltage defect in the excited-state design, compared with the conventional ground-state injection design. The threshold voltage and voltage defect are as low as 6.3 V and 54 mV for a 30-stage active region, respectively. Devices were fabricated through standard buried-heterostructure processing to decrease the heat accumulation. A continuous-wave optical power of 340 mW is obtained at 283 K with a threshold current density of 2.7 kA/cm2. Such a design has the potential to further improve the wall plug efficiency for increased voltage efficiency.

Room temperature continuous wave quantum dot cascade laser emitting at 7.2 µm.

We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that are embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 µm has been demonstrated with the threshold current density as low as 1.89 kA/cm2, while in pulsed operational mode lasing at temperatures as high as 110 °C had been observed. A phenomenological theory explaining the improved performance due to weak localization of states had been formulated.

High efficiency, single-lobe surface-emitting DFB/DBR quantum cascade lasers.

We demonstrate a surface-emitting quantum cascade laser (QCL) based on second-order buried distributed feedback/distributed Bragg reflector (DFB/DBR) gratings for feedback and outcoupling. The grating fabricated beneath the waveguide was found to fundamentally favor lasing in symmetric mode either through analysis or experiment. Single-lobe far-field radiation pattern with full width at half maximum (FWHM) of 0.18° was obtained along the cavity-length direction. Besides, the buried DFB/DBR grating structure successfully provided an efficient vertical outcoupling mechanism with low optical losses, which manages to achieve a high surface outcouping efficiency of 46% in continuous-wave (CW) operation and 60% in pulsed operation at room temperature. Single-mode emission with a side-mode suppression ratio (SMSR) about 25 dB was continuously tunable by heat sink temperature or injection current. Our work contributes to the realization of high efficiency surface-emitting devices with high far-field beam quality that are significantly needed in many application fields.

Role of Nrf2 dysfunction in uremia-associated intestinal inflammation and epithelial barrier disruption.

BACKGROUND: Gut inflammation is prevalent in chronic kidney disease (CKD) and likely contributes to systemic inflammation via disruption of the epithelial tight junction with subsequent endotoxin and bacterial translocation. AIMS: To study the expression profile of inflammatory and tight junction proteins in the colon from CKD rats compared to healthy controls, and demonstrate the role of Nrf2 (transcription factor nuclear factor erythroid 2-related factor 2) using a potent Nrf2 activator. METHODS: CKD was induced via 5/6 nephrectomy in Sprague-Dawley rats, and dh404 (2 mg/kg/day) was used to study the effects of systemic Nrf2 activation. The experimental groups included sham, CKD and CKD+ dh404 rats. Blood and colon tissues were analyzed after a 10-week study period. RESULTS: Colon from CKD rats showed histological evidence of colitis, depletion of epithelial tight junction proteins, significant reduction of Nrf2 and its measured target gene products (NQO1, catalase, and CuZn SOD), activation of NFkB, and upregulation of pro-inflammatory molecules (COX-2, MCP-1, iNOS, and gp91(phox)). Treatment with dh404 attenuated colonic inflammation, restored Nrf2 activity and levels of NQO1, catalase and CuZn SOD, decreased NFkB and lowered expression of COX-2, MCP-1, iNOS, and gp91(phox). This was associated with restoration of colonic epithelial tight junction proteins (occludin and claudin-1). CONCLUSIONS: CKD rats exhibited colitis, disruption of colonic epithelial tight junction, activation of inflammatory mediators, and impairment of Nrf2 pathway. Treatment with an Nrf2 activator restored Nrf2 activity, attenuated colonic inflammation, and restored epithelial tight junction proteins.

Formation mechanism and characterization of black silicon surface by a single-step wet-chemical process.

We report a simple single-step etching method for formation of black surface on silicon wafer by using HAuCl4-HF-H2O2 etching solution, in which catalytic Au particles were deposited in situ. The black surface suppresses the reflectivity in a wide spectral region. The formation mechanism involved has been discussed.

Luminescence nanocrystals for solar cell enhancement.

Semiconductor nanocrystals (NCs) prepared by wet-chemical routes have been proposed as an attractive candidate for fabrication of the third-generation thin-film solar cells due to their quantum confinement effects and excellent dispersion ability in polymer films. However, to date, a solar cell incorporating semiconductor NCs in the photoactive layer still has rather low efficiency due to the low carrier mobility of the non-continued NC phase and the possible radiative recombination in NCs. To avoid these disadvantages, NCs have been proposed and applied as a luminescent species in a passive photon converting layer to modify the solar spectrum before the light enters the photovoltaic device. Photon conversion processes, including up-conversion, down-conversion, and down-shifting, have been observed in various colloidal NC samples and have great potential to enhance photovoltaic performance when applied to the existing single-junction solar cells or narrow-band molecular-based devices.

Demonstration of High-Power and Stable Single-Mode in a Quantum Cascade Laser Using Buried Sampled Grating.

High-power, low-threshold stable single-mode operation buried distributed feedback quantum cascade laser by incorporating sampled grating emitting at λ ~ 4.87 µm is demonstrated. The high continuous wave (CW) output power of 948 mW and 649 mW for a 6-mm and 4-mm cavity length is obtained at 20 °C, respectively, which benefits from the optimized optical field distribution of sampled grating. The single-mode yields of the devices are obviously enhanced by controlling cleaved positions of the two end facets precisely. As a result, stable single-mode emission and mode tuning linearly without any mode hopping of devices are obtained under the different heat sink temperatures or high injection currents.

Anomalous Mode Transitions in High Power Distributed Bragg Reflector Quantum Cascade Lasers.

In this paper, an anomalous spectral data of distributed Bragg reflector (DBR) quantum cascade lasers (QCLs) emitting around 7.6 µm is presented. The two-section DBR lasers, consisting of a gain section and an unpumped Bragg reflector, display an output power above 0.6 W in continuous wave (CW) mode at room temperature. The anomalous spectral data is defined as a longitudinal mode which moves toward shorter wavelengths with increasing temperature or injection current, which is unexpected. Although the longer wavelength modes are expected to start lasing when raising device temperature or injection current, occasional mode hops to a shorter wavelength are seen. These anomalous mode transitions are explained by means of modal analysis. The thermal-induced change of the refractive index implied by an increase in the temperature or injection current yields nearly periodic transitions between cavity modes.

Luminescent silicon nanoparticles formed in solution.

This review focuses on the preparation of Si nanoparticles by wet-chemical routes. The methods described include dispersion from porous silicon, etching and surface functionalization of Si/SiO2 powders and direct chemical reaction of Si precursors. Photoluminescence of silicon nanoparticles can be tuned to cover the whole visible spectrum depending on particle size. The excitonic origin or nature of PL has been generally accepted. Some researchers observed exciton recombination across the direct band-gap, i.e., gamma-gamma transitions, while others evidenced indirect nature of excitonic radiative recombination, which becomes direct in very small particles of 1-2 nm. A large redshift of photoluminescence from these small silicon nanoparticles has been explained by a localized surface states model. Others argue that no localized states are found in the band-gap if a complete oxide shell is formed, and the photoluminescence redshift is due to modification of band-edge states.

[Expression and significance of B7-H1 and its receptor PD-1 in human gastric carcinoma].

OBJECTIVE: The B7-H1/PD-1 co-signaling pathway has recently been found to play a pivotal role in the immune evasion of tumor cells from host immune system. The aim of this study was to examine the B7-H1 and PD-1 expression and TILs status in gastric cancer and to elucidate the clinical relevance of B7-H1 and PD-1 to the pathogenesis of gastric carcinoma. METHODS: Immunohistochemistry and ANAE histochemical staining were used to investigate the in situ expression of B7-H1 and PD-1 and TILs status in the gastric tissues. RT-PCR was used to explore B7-H1 and PD-1 expression at the transcriptional level. The B7-H1 expression at protein level was detected by Western blot. RESULTS: Expression of B7-H1 and PD-1 was found to be increased in gastric carcinoma, but absent in normal gastric tissue. B7-H1 expression in gastric carcinoma was inversely correlated with TILs infiltration. B7-H1 but not PD-1 expression in tumor tissue was significantly correlated with some clinicopathhological variables including depth of invasion, lymph node metastasis and distant metastasis. CONCLUSION: B7-H1 and PD-1 expressions are increased in gastric carcinoma. This signaling pathway may inhibit antitumor immune responses in gastric carcinoma. B7-H1 expression plays a critical role in the pathogenesis of human gastric carcinoma,and might be a promising prognostic marker and therapeutic target in the treatment of this disease.

Tapered Quantum Cascade Laser Arrays Integrated with Talbot Cavities.

Power scaling in broad area quantum cascade laser (QCL) usually leads to the deterioration of the beam quality with an emission of multiple lobes far-field pattern. In this letter, we demonstrate a tapered QCL array integrated with Talbot cavity at one side of the array. Fundamental supermode operation is achieved in the arrays with taper straight-end connected to the Talbot cavity. Lateral far-field of the fundamental supermode shows a near diffraction limited beam divergence of 2.7°. The output power of a five-element array is about three times as high as a single-ridge laser with an emission wavelength of around 4.8 µm. However, arrays with the taper-end connected to the Talbot cavity always show a high-order supermode operation whatever Talbot cavity length is.

Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings.

In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 µm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any mode hop by the optimized antireflection (AR) coating on the front facet. The AR coating consists of a double layer dielectric of Al2O3 and Ge. For a 2-mm laser cavity, the maximum output power of the AR-coated DFB-QCL was more than 170 mW at 20 °C with a high wall-plug efficiency (WPE) of 4.7% in a continuous-wave (CW) mode.

Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers.

In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5o and 1.94o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.

Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector.

We demonstrate a quantum dash quantum cascade photodetector (QDash-QCD) by incorporating self-assembled InAs quantum dashes into the active region of a long wave infrared QCD. Sensitive photoresponse to normal incident light at 10 µm was observed, which is attributed to the intersubband (ISB) transitions in the quantum well/quantum dash (QW/QDash) hybrid absorption region and the following transfer of excited electrons on the extraction stair-like quantum levels separated by LO-phonon energy. The high density InAs quantum dashes were formed in the Stranski-Krastanow mode and stair-like levels were formed by a lattice matched InGaAs/InAlAs superlattice. A stable responsivity from 5 mA/W at 77 K to 3 mA/W at as high as 190 K was observed, which makes the QDash-QCD promising in high temperature operation.

A Polarization-Dependent Normal Incident Quantum Cascade Detector Enhanced Via Metamaterial Resonators.

The design, fabrication, and characterization of a polarization-dependent normal incident quantum cascade detector coupled via complementary split-ring metamaterial resonators in the infrared regime are presented. The metamaterial structure is designed through three-dimensional finite-difference time-domain method and fabricated on the top metal contact, which forms a double-metal waveguide together with the metallic ground plane. With normal incidence, significant enhancements of photocurrent response are obtained at the metamaterial resonances compared with the 45° polished edge coupling device. The photocurrent response enhancements exhibit clearly polarization dependence, and the largest response enhancement factor of 165% is gained for the incident light polarized parallel to the split-ring gap.

Synthesis of silicon nanowires and nanoparticles by arc-discharge in water.

Si nanowires of diameters 5-20 nm and nanoparticles of approximately 4 nm were synthesized by a simple arc-discharge method in water. The TEM analysis reveals that the growth direction of the observed Si nanowires is parallel to the {111} crystal planes.

[Spectral characteristics of CdSe/CdS nanocrystals].

Semiconductor nanocrystals appear different optical properties from their bulk analogous due to quantum confinement effects. It is well known that optical absorption of nanocrystals shift to higher energy as the sizes decrease, while the emission at the absorption band edge is always too weak to be investigated in details due to much nonradiative recombination at nanoparticle surface. To eliminate the surface defects, some kinds of materials such as organic molecules, polymers and inorganic compounds are used to overcoat the nanoparticles. It has been found that nanocrystals overcoated with high band gap inorganic materials maned core/shell type nanocrystals exhibit high photoluminescence intensity at band edge due to effective elimination of surface nonradiative recombination. In this article we report the characteristics of CdSe/CdS core/shell nanocrystals synthesized with mercapto acid as stabilizer. The effect of CdS shell on the electronic characteristics and the luminescence of CdSe core were investigated by using optical absorption, photoluminescence and photoluminescence excitation spectra. Large band edge luminescence enhancement was found in CdSe nanoparticles overcoated with the CdS shell with a thickness of 0.3 nm due to passivation of nonradiative recombination sites on CdSe surfaces. Such bandadge emission also appeared redshift from the absorption maximum. This Stokes shift of the emission peak from the absorption edge was explained by a model of formation of excimer among the small nanoparticles based on the optical experimental results and the theoretical calculation on fine structures of bandadge excitons.

[Two mechanisms of the color-tunable organic electroluminescence by the voltage applied].

Two devices structures of ITO/PVK: Rubrene/Al and ITO/Alq3:MN-PPV/Al were developed. Their characters of photoluminescence and electroluminscence were studied. The result showed that there were great difference between the photoluminescence and electroluminscence at a doping ratio of 2 wt% in ITO/PVK: Rubrene/Al. It is concluded that energy transfer in these dye-doped devices occurred by Förster energy transfer processes. And the trap effect of electrons of Rubrene on holes of PVK resulted in different combination probability of PVK excitation in photoluminescence and electroluminescence. At the same time, the two EL devices were color-tunable when the bias voltage was increased. The mechanisms which cause color variation are different. In the first device, it indicates that the energy transfer process from PVK to Rubrene is not complete. The combination probability of PVK excitation which does not contribute to the emission of Rubrene is increased when the bias voltage increases. But in the second device, there are many micro-interfaces due to the phase-separation just like the interface in a double layer device. The tunneling interface barriers of carriers is the main cause of color variation in the second device.