Nonlocal electron correlations in an itinerant ferromagnet.

Our understanding of the properties of ferromagnetic materials, widely used in spintronic devices, is fundamentally based on their electronic band structure. However, even for the most simple elemental ferromagnets, electron correlations are prevalent, requiring descriptions of their electronic structure beyond the simple picture of independent quasi-particles. Here, we give evidence that in itinerant ferromagnets like cobalt these electron correlations are of nonlocal origin, manifested in a complex self-energy Σσ(E,k) that disperses as function of spin σ, energy E, and momentum vector k. Together with one-step photoemission calculations, our experiments allow us to quantify the dispersive behaviour of the complex self-energy over the whole Brillouin zone. At the same time we observe regions of anomalously large "waterfall"-like band renormalization, previously only attributed to strong electron correlations in high-TC superconductors, making itinerant ferromagnets a paradigmatic test case for the interplay between band structure, magnetism, and many-body correlations.

Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour.

In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaOx (x~1.1) thin films. We directly observe reversible enrichment and depletion of oxygen ions at the blocking electrodes responding to the bias polarity by using photoemission and transmission electron microscopies, thus proving that oxygen ion mobility at room temperature causes memristive behaviour. The shape of the hysteresis I-V curves is tunable by the bias history, ranging from narrow counter figure-eight loops to wide hysteresis, triangle loops as found in the mathematically derived memristor model. This dynamical behaviour can be attributed to the coupled ion drift and diffusion motion and the oxygen concentration profile acting as a state function of the memristor.