Non-Drude Magneto-Transport Behavior in a Topological Crystalline Insulator/Band Insulator Heterostructure.

The Drude model is one of the most fundamental models used to understand the electronic carrier transport in materials, including recently discovered topological materials. Here, we present a magneto-transport study revealing the non-Drude transport behavior in a heterostructure of topological crystalline insulator (TCI) SnTe and band insulator PbTe which exhibits a nonsaturating linear magneto-resistance (MR) effect, a novel phenomenon widely observed in topological materials with gapless dispersion. It is shown that in the van der Pauw geometry in which the longitudinal and transverse magneto-resistances are measured to extract the magneto-conductivity, the two-band Drude model is not sufficient to self-consistently describe both the longitudinal and transverse magneto-conductivities. Furthermore, in the Corbino geometry, which directly measures the longitudinal magneto-conductivity σ xx( B) for a straightforward comparison with the Drude model, the MR, 1/σ xx( B), still reveals a large linear MR effect, in direct discrepancy with the Drude model. While shining further light on the multiple-carrier transport in TCI, this study highlights an unusual magneto-transport character of topological materials that challenges the standard Drude picture of electron transport.

Anomalous transport phenomena in Weyl metal beyond the Drude model for Landau's Fermi liquids.

Landau's Fermi-liquid theory is the standard model for metals, characterized by the existence of electron quasiparticles near a Fermi surface as long as Landau's interaction parameters lie below critical values for instabilities. Recently this fundamental paradigm has been challenged by the physics of strong spin-orbit coupling, although the concept of electron quasiparticles remains valid near the Fermi surface, where Landau's Fermi-liquid theory fails to describe the electromagnetic properties of this novel metallic state, referred to as Weyl metal. A novel ingredient is that such a Fermi surface encloses a Weyl point with definite chirality, referred to as a chiral Fermi surface, which can arise from breaking of either time reversal or inversion symmetry in systems with strong spin-orbit coupling, responsible for both the Berry curvature and the chiral anomaly. As a result, electromagnetic properties of the Weyl metallic state are described not by conventional Maxwell equations but by axion electrodynamics, where Maxwell equations are modified with a topological-in-origin spatially modulated [Formula: see text] term. This novel metallic state was realized recently in Bi[Formula: see text]Sb x around [Formula: see text] under magnetic fields, where the Dirac spectrum appears around the critical point between the normal semiconducting ([Formula: see text]) and topological semiconducting phases ([Formula: see text]) and the time reversal symmetry breaking perturbation causes the Dirac point to split into a pair of Weyl points along the direction of the applied magnetic field for a very strong spin-orbit coupled system. In this review article, we discuss how the topological structure of both the Berry curvature and the chiral anomaly (axion electrodynamics) gives rise to anomalous transport phenomena in [Formula: see text]Sb x around [Formula: see text] under magnetic fields, thus modifying the Drude model of Landau's Fermi liquids.

Electronic, optical, and thermoelectric characteristics of (Ae)xFBiS2 (Ae=Sr, Ba, and x=1.7) layered materials useful in optical modulator devices.

The recent discovery of superconductivity behavior in the mother BiS2-layered compounds has captivated the attention of several physicists. The crystal structure of superconductors with alternate layers of BiS2 is homologous to that of cuprates and Fe-based superconductors. The full-potential linearized augmented plane-wave (FP-LAPW) technique was utilized to investigate the electronic structures and density of states in the vicinity of the Fermi energy of SrFBiS2 and BaFBiS2 compounds under the electron carriers doping. The introduction of electron doping (carries doping) reveals that the host compounds SrFBiS2 and BaFBiS2 exhibit features indicative of superconductivity. This carrier doping of SrFBiS2 and BaFBiS2 compounds (electron-doped) has a significant impact on the lowest conduction states near the Fermi level for the emergence of the superconducting aspect. The electron doping modifies and induces changes in the electronic structures with superconducting behavior in (Ae)1.7FBiS2(Ae=Sr,Ba) compounds. A Fermi surface nesting occurred under the modification of electrons (carriers) doping in the host compounds SrFBiS2 and BaFBiS2. Furthermore, the optical characteristics of the carrier-doped SrFBiS2 and BaFBiS2 compounds are simulated. Due to the anisotropic behavior, the optical properties of these materials based on BiS2 demonstrate a pronounced polarization dependency. The starting point at zero photon energy in the infrared region is elucidated by considering the Drude features in the optical conductivity spectra of SrFBiS2 and BaFBiS2 compounds, when the electron carriers doping is applied. It was clearly noticed that the spin-orbit coupling (SOC) influences the electronic band structures, density of states, Femi surface, and optical features because of the heavy Bismuth atom, which may disclose fascinating aspects. Further, we conducted simulations to assess the thermoelectric properties of these mother compounds. The two BiS2-layered compounds could be suitable for practical thermoelectric purposes and are highlighted through assessment of electrical conductivity, thermal conductivity, Seebeck coefficient, and power factor. As a result, we propose that the mechanisms of superconducting behavior in BiS2 family may pave new avenues for investigating the field of unconventional superconductivity. It may also provide new insights into the origin of high-Tc superconductivity nature.

Upheaval of Negative Dielectric Permittivity and Semiconductor to Metallic Transition in a Thermally Induced Sn-Doped ß-Ga2O3 (-201) Single Crystal.

Thermally induced dielectric and conductivity properties of an Sn-doped ß-Ga2O3 (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in ß-Ga2O3 were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature. The negative impedance values were encountered in the Nyquist plots (Z' vs Z″) after 573 K and constitute a reverse movement after 723 K with temperature. The average normalized change (ΔZ'/Δf)/Z0 of impedance exhibits a broad downward relaxation plateau near 723 K, indicating a weak electrical transition. The increases in the positive value of the dielectric constant (εr') below a percolating threshold temperature 573 K is attributed to the interfacial and dipolar polarizations, and the plasma oscillation of delocalized electrons governed by the Drude theory is responsible for the negative dielectric constant above 573 K. The 3D projections of the real dielectric constant create a sharp downward sinkhole near 723 K, indicating the existence of negative dielectric permittivity. The electrical conductivity dramatically changes its trends after 523 K and confirms a transition from hopping conduction (dielectric or semiconductor) following Jonscher's power law to metallic conduction by Drude theory. Below the percolating threshold temperature, a nonoverlapping small polaron tunneling conduction mechanism was unveiled with defect-induced activation energy of 0.21 eV. The Sn-doped ß-Ga2O3 exhibits unique and tailored electromagnetic responses with temperatures that can be associated with a variety of applications in electromagnetic wave manipulations, cloaking devices, antennas, sensors, medical imaging, seismic wave propagation, etc.

Spatial nonlocality effect on the surface plasmon propagation in plasmonic nanospheres waveguide.

Spatial nonlocality affects the plasmonic characteristics of nanostructures. We used the quasi-static hydrodynamic Drude model to obtain the surface plasmon excitation energies in various metallic nanosphere structures. The surface scattering and radiation damping rates were phenomenologically incorporated into this model. We demonstrate that spatial nonlocality increases the surface plasmon frequencies and total plasmon damping rates in a single nanosphere. This effect was amplified for small nanospheres and higher multipole excitation. In addition, we find that spatial nonlocality reduces the interaction energy between two nanospheres. We extended this model to a linear periodic chain of nanospheres. Then we obtain the dispersion relation of surface plasmon excitation energies using Bloch's theorem. We also show that spatial nonlocality decreases the group velocities and energy decay lengths of the propagating surface plasmon excitations. Finally, we demonstrated that the effect of spatial nonlocality is significant for very small nanospheres separated by short distances.

Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions.

Indium tin oxide (ITO) has recently gained prominence as a photonic nanomaterial, for example, in modulators, tuneable metasurfaces and for epsilon-near-zero (ENZ) photonics. The optical properties of ITO are typically described by the Drude model and are strongly dependent on the deposition conditions. In the current literature, studies often make several assumptions to connect the optically measured material parameters to the electrical properties of ITO, which are not always clear, nor do they necessarily apply. Here, we present a comprehensive study of the structural, electrical, and optical properties of ITO and showed how they relate to the deposition conditions. We use guided mode resonances to determine the dispersion curves of the deposited material and relate these to structural and electrical measurements to extract all relevant material parameters. We demonstrate how the carrier density, mobility, plasma frequency, electron effective mass, and collision frequency vary as a function of deposition conditions, and that the high-frequency permittivity (쵰) can vary significantly from the value of 쵰 = 3.9 that many papers simply assume to be a constant. The depth of analysis we demonstrate allows the findings to be easily extrapolated to the photonic characterisation of other transparent conducting oxides (TCOs), whilst providing a much-needed reference for the research area.

Two-Dimensional Plasmons in Laterally Confined 2D Electron Systems.

The collective oscillations of charge density (plasmons) in conductive solids are basic excitations that determine the dynamic response of the system. In infinite two-dimensional (2D) electron systems, plasmons have gapless dispersion covering a broad spectral range from subterahertz to infrared, which is promising in light-matter applications. We discuss the state-of-the-art physics of 2D plasmons, especially in confined 2D electron systems in stripe and disk geometry, using the simplest approach for conductivity. When the metal gate is placed in the vicinity of the 2D electron system, an analytical description of the plasmon frequency and damping can be easily obtained. We also analyze gated plasmons in the disk when it was situated at various distances from the gate, and discuss in detail the nontrivial behavior of the damping. We predict that it is not a simple sum of the radiative and collisional dampings, but has a nonmonotonic dependence on the system parameters. For high-mobility 2D systems, this opens the way to achieve the maximal quality factor of plasma resonances. Lastly, we discuss the recently discovered near-gate 2D plasmons propagating along the laterally confined gate, even without applied bias voltage and having gapless dispersion when the gate has the form of a stripe, and discrete spectrum when the gate is in the form of disk. It allows for one to drive the frequency and spatial propagation of such plasmons.

Investigation of the Resistivity and Emissivity of a Pellicle Membrane for EUV Lithography.

A pellicle is a thin membrane structure that protects an extreme ultraviolet (EUV) mask from contamination during the exposure process. However, its limited transmittance induces unwanted heating owing to the absorption of EUV photons. The rupture of the EUV pellicle can be avoided by improving its thermal stability, which is achieved by improving the emissivity of the film. However, the emissivity data for thin films are not easily available in the literature, and its value is very sensitive to thickness. Therefore, we investigated the dependence of emissivity on structural parameters, such as thickness, surface roughness, and grain size. We found a correlation between resistivity and emissivity using theoretical and experimental approaches. By changing the grain size of the Ru thin film, the relationship between resistivity and emissivity was experimentally verified and confirmed using the Lorentz-Drude model. Finally, we present a method to develop an EUV pellicle with better thermal stability that can withstand high-power EUV light sources.

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change.

The dynamics of ablation in monocrystalline silicon, from electron-hole plasma generation to material expansion, upon irradiation by a single femtosecond laser pulse (1030 nm, 300 fs pulse duration) at a wide range of fluences is investigated using a time-resolved microscopy technique. The reflectivity evolution obtained from dynamic images in combination with a theoretical Drude model and a Two-Temperature model provides new insights on material excitation and ablation process. For all fluences, the reflectivity increased to a temporary stable state after hundreds of femtoseconds. This behavior was predicted using a temperature-dependent refractive index in the Drude model. The increase in velocity of plasma generation with increasing fluence was theoretically predicted by the Two-Temperature model. Two ablation regimes at high fluences (>0.86 J/cm2) were identified through the measured transient reflectivity and ablation crater profile. The simulation shows that the fluence triggering the second ablation regime produces a boiling temperature (silicon, 2628 K).

An Analytical Quantum Model to Calculate Fluorescence Enhancement of a Molecule in Vicinity of a Sub-10 nm Metal Nanoparticle.

An analytical quantum model is used to calculate electrical permittivity of a metal nanoparticle located in an adjacent molecule. Different parameters, such as radiative and non-radiative decay rates, quantum yield, electrical field enhancement factor, and fluorescence enhancement are calculated by such a model and they are compared with those obtained by using the classical Drude model. It is observed that using an analytical quantum model presents a higher enhancement factor, up to 30%, as compared to classical model for nanoparticles smaller than 10 nm. Furthermore, the results are in better agreement with those experimentally realized.

Electrically tunable metasurface perfect absorber for infrared frequencies.

We theoretically investigate a metasurface perfect absorber based on indium-tin-oxide as active material. Our design scheme relies on conventional metal-oxide-semiconductor model and the Drude model. Inducing a voltage into the device causes a blue-shift of 50 nm in the reflectance spectrum in the infrared region. The total thickness of the device is only 3.5% of the working wavelength λ = 2.56 µm, and the rate of reflectance change reaches 5.16 at λ = 2.56 µm. Because the material that we use has advantages of easy fabrication and fast response, our design approach can be used for numerous applications on active plasmonic sensors and filters.

Raman and Conductivity Analysis of Graphene for Biomedical Applications.

In this study, we present a comprehensive investigation of graphene's optical and conductive properties using confocal Raman and a Drude model. A comparative analysis between experimental findings and theoretical predictions of the material's changes and improvements as it transitioned from three-dimensional graphite is also presented and discussed. Besides spectral recording by Raman, which reveals whether there is a single, a few, or multi-layers of graphene, the confocal Raman mapping allows for distinction of such domains and a direct visualization of material inhomogeneity. Drude model employment in the analysis of the far-infrared transmittance measurements demonstrates a distinct increase of the material's conductivity with dimensionality reduction. Other particularly important material characteristics, including carrier concentration and time constant, were also determined using this model and presented here. Furthermore, the detection of micromolar concentration of dopamine on graphene surfaces not only proves that the Raman technique facilitates ultrasensitive chemical detection of analytes, besides offering high information content about the biomaterial under study, but also that carbon-based materials are biocompatible and favorable micro-environments for such detection. Such information is valuable for the development of bio-medical sensors, which is the main application envisioned for this analysis.