Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate.

Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hexagonal boron nitride/graphene semifloating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (∼3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ∼0.5 A/W and detectivity ∼1.6 × 1012 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semifloating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.

Exchange between Interlayer and Intralayer Exciton in WSe2/WS2 Heterostructure by Interlayer Coupling Engineering.

Because of type-II band alignment, interlayer exciton (IX) is found in a van der Waals (vdW) heterostructure (HS) formed by two monolayers of transition-metal dichalcogenides. Manipulation of IXs is of great importance for excitonic integrated devices. Here, we demonstrate that high pressure and tensile strain can be applied to enhance and reduce interlayer coupling of WSe2/WS2 HS, respectively. High pressure induces the transform of intralayer excitons to IX, while tensile strain leads to the transform of IXs to intralayer excitons. In addition, there is a direct-to-indirect band gap transition of WSe2/WS2 HS. The interlayer distance of WSe2/WS2 HS is reduced under high pressure, but it increased under uniaxial tensile strain from first-principles calculations. The calculated band structures explain well the transformation between interlayer and intralayer excitons of WSe2/WS2 HS. This work demonstrates the exchange of interlayer and intralayer excitons and paves the way to manipulate excitons of HS for excitonic applications.

Strain Tunability of Perpendicular Magnetic Anisotropy in van der Waals Ferromagnets VI3.

Layered ferromagnets with strong magnetic anisotropy energy (MAE) have special applications in nanoscale memory elements in electronic circuits. Here, we report a strain tunability of perpendicular magnetic anisotropy in van der Waals (vdW) ferromagnets VI3 using magnetic circular dichroism measurements. For an unstrained flake, the M-H curve shows a rectangular-shaped hysteresis loop with a large coercivity (1.775 T at 10 K) and remanent magnetization. Furthermore, the coercivity can be enhanced to a maximum of 2.6 T under a 3.8% external in-plane tensile strain. Our DFT calculations show that the increased MAE under strain contributes to the enhancement of coercivity. Meanwhile, the strain tunability on the coercivity of CrI3, with a similar crystal structure, is limited. The main reason is the strong spin-orbit coupling in V3+ in VI6 octahedra in comparison with that in Cr3+. The strain tunability of coercivity in VI3 flakes highlights its potential for integration into vdW heterostructures.

Pressure Tunable van Hove Singularities of Twisted Bilayer Graphene.

The giant light-matter interaction induced by van Hove singularities (vHSs) of twisted bilayer graphene (tBLG) is responsible for enhanced optical absorption and strong photoresponse. Here, we investigated the evolution of vHSs in tBLG under pressure by using Raman spectroscopy. Pressure not only induces a blue shift of the G/R band but also tunes the intensity of the G/R band. The blue shift of the G/R band is due to the reduction of the in-plane lattice constant, and the variation of the G/R band intensity is due to the vHSs' shift of tBLG. Moreover, the main band in the absorption spectrum of tBLG is attributed to multiple transitions from valence to conduction bands. Because the ratio of R to G band intensity increases under pressure and the origins of R and G bands are different, we claim that pressure enhances intervalley electron scattering. This study paves the way for pressure engineering of vHS and the corresponding photon-electron-phonon interaction in tBLG.

A Quadruple-Borylated Multiple-Resonance Emitter with para/meta Heteroatomic Patterns for Narrowband Orange-Red Emission.

Hindered by spectral broadening issues with redshifted emission, long-wavelength (e.g., maxima beyond 570 nm) multiple resonance (MR) emitters with full width at half maxima (FWHMs) below 20 nm remain absent. Herein, by strategically embedding diverse boron (B)/nitrogen (N) atomic pairs into a polycyclic aromatic hydrocarbon (PAH) skeleton, we propose a hybrid pattern for the construction of a long-wavelength narrowband MR emitter. The proof-of-concept emitter B4N6-Me realized orange-red emission with an extremely small FWHM of 19 nm (energy unit: 70 meV), representing the narrowest FWHM among all reported long-wavelength MR emitters. Theoretical calculations revealed that the cooperation of the applied para B-π-N and para B-π-B/N-π-N patterns is complementary, which gives rise to both narrowband and redshift characteristics. The corresponding organic light-emitting diode (OLED) employing B4N6-Me achieved state-of-the-art performance, e.g., a narrowband orange-red emission with an FWHM of 27 nm (energy unit: 99 meV), an excellent maximum external quantum efficiency (EQE) of 35.8 %, and ultralow efficiency roll-off (EQE of 28.4 % at 1000 cd m-2 ). This work provides new insights into the further molecular design and synthesis of long-wavelength MR emitters.

Combining Carbazole Building Blocks and ν-DABNA Heteroatom Alignment for a Double Boron-Embedded MR-TADF Emitter with Improved Performance.

Building blocks and heteroatom alignments are two determining factors in designing multiple resonance (MR)-type thermally activated delayed fluorescence (TADF) emitters. Carbazole-fused MR emitters, represented by CzBN derivatives, and the heteroatom alignments of ν-DABNA are two star series of MR-TADF emitters that show impressive performances from the aspects of building blocks and heteroatom alignments, respectively. Herein, a novel CzBN analog, Π-CzBN, featuring ν-DABNA heteroatom alignment is developed via facile one-shot lithium-free borylation. Π-CzBN exhibits superior photophysical properties with a photoluminescence quantum yield close to 100 % and narrowband sky blue emission with a full width at half maximum (FWHM) of 16 nm/85 meV. It also gives efficient TADF properties with a small singlet-triplet energy offset of 40 meV and a fast reverse intersystem crossing rate of 2.9×105  s-1 . The optimized OLED using Π-CzBN as the emitter achieves an exceptional external quantum efficiency of 39.3 % with a low efficiency roll-off of 20 % at 1000 cd m-2 and a narrowband emission at 495 nm with FWHM of 21 nm/106 meV, making it one of the best reported devices based on MR emitters with comprehensive performance.

Stable antiferromagnetism and semiconducting-to-metal transition in ALaCuOsO6 (A = Ba and Sr): strain modulations.

Double perovskite oxides (DPO) with antiferromagnetic ground state have received much consideration as they exhibit small stray-field and ultra-fast spin dynamics, which is extremely convenient for high-density and high-frequency data storage devices. It is a well-established fact that strain can easily tune the physical properties of the materials; therefore, the electronic and magnetic properties of recently synthesized ordered ALaCuOsO6 (A = Ba and Sr) DPO under biaxial ([110]) strain are investigated using ab initio calculations. Our results revealed that the unstrained systems exhibit semiconducting states having energy band gaps (Eg) of 0.28 and 0.39 eV for A = Ba and Sr, respectively. Along with this, both structures exhibit AFM ground state due to a strong AFM coupling between partially filled high-energy Cu+ e1g↑ and low-energy empty Os+5 t02g↓ orbitals. The calculated partial spin moments of Cu and Os ions are 0.65/0.66 and 1.58/1.60µB in a Ba-/Sr-doped system having electronic configurations of 3d9 (t32g↑t32g↓e2g↑e1g↓) with S = 0.5 and 5d3 (t32g↑) with S = 1.5, respectively. The robustness of AFM spin ordering is affirmed under the strain effects. The most striking feature of the present study is that Ba- and Sr-doped systems demonstrate an electronic transition from semiconductor to metal at critical tensile strains of +4% and +5% along with improved magnetism as well as Néel temperature, respectively. However, the magnetic ground state remains robust against applied strains in both cases. Hence, the present study shows that strain engineering could be a practical tool to modulate the electronic and magnetic properties of DPO to further enhance their technological applications in spintronics.

A Highly Twisted Carbazole-Fused DABNA Derivative as an Orange-Red TADF Emitter for OLEDs with Nearly 40 % EQE.

Multiple resonance (MR) type thermally activated delayed fluorescence (TADF) material is currently a research hotspot in organic light-emitting diodes (OLEDs) due to their high color purity and high exciton utilization. However, there are only a handful of MR-TADF emitters with emissions beyond the blue-to-green region. The very limited emission colors for MR-TADF emitters are mainly caused by the fact that so far molecular modifications of MR-TADF do not offer much change in the emission colors. Here, we report a new approach to modifying a prototypical MR core of DABNA by fusing carbazoles to the MR framework. The carbazole-fused molecule (TCZ-F-DABNA) basically maintains the MR-dominated features of DABNA while red-shifting the emission. Its OLED achieves an external quantum efficiency of 39.2 % with a peak at 588 nm, which is a record-high efficiency for OLEDs with peaks beyond 560 nm. This work provides a new approach for significantly tunning emission colors of MR-TADF emitters.

Overturned Loading of Inert CeO2 to Active Co3 O4 for Unusually Improved Catalytic Activity in Fenton-Like Reactions.

In the past decades, numerous efforts have been devoted to improving the catalytic activity of nanocomposites by either exposing more active sites or regulating the interaction between the support and nanoparticles while keeping the structure of the active sites unchanged. Here, we report the fabrication of a Co3 O4 -CeO2 nanocomposite via overturning the loading direction, i.e., loading an inert CeO2 support onto active Co3 O4 nanoparticles. The resultant catalyst exhibits unexpectedly higher activity and stability in peroxymonosulfate-based Fenton-like reactions than its analog prepared by the traditional impregnation method. Abundant oxygen vacancies (Ov with a Co⋅⋅⋅Ov ⋅⋅⋅Ce structure instead of Co⋅⋅⋅Ov ) are generated as new active sites to facilitate the cleavage of the peroxide bond to produce SO4 .- and accelerate the rate-limiting step, i.e., the desorption of SO4 .- , affording improved activity. This strategy is a new direction for boosting the catalytic activity of nanocomposite catalysts in various scenarios, including environmental remediation and energy applications.

Spin-Valley Locking Effect in Defect States of Monolayer MoS2.

Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.

Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3.

Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.

Recent Progress of Janus 2D Transition Metal Chalcogenides: From Theory to Experiments.

Since the discovery of graphene, 2D materials with various properties have gained increasing attention in fields such as novel electronic, optic, spintronic, and valleytronic devices. As an important derivative of 2D materials, Janus 2D materials, such as Janus transition metal chalcogenides (TMDs), have become a research hot spot in recent years. Janus 2D materials with mirror asymmetry display novel properties, such as the Rashba effect and normal piezoelectric polarization, providing great promise for their application in sensors, actuators, and other electromechanical devices. Here, the current theoretical and experimental progresses made in the development of Janus 2D TMDs, including their structure and stability, electronic properties, fabrication, and the results of their characterization are reported. Finally, the future prospects for the further development of Janus 2D materials are considered.

Selective Ionic Transport Pathways in Phosphorene.

Despite many theoretical predictions indicating exceptionally low energy barriers of ionic transport in phosphorene, the ionic transport pathways in this two-dimensional (2D) material has not been experimentally demonstrated. Here, using in situ aberration-corrected transmission electron microscopy (TEM) and density functional theory, we studied sodium ion transport in phosphorene. Our high-resolution TEM imaging complemented by electron energy loss spectroscopy demonstrates a precise description of anisotropic sodium ions migration along the [100] direction in phosphorene. This work also provides new insight into the effect of surface and the edge sites on the transport properties of phosphorene. According to our observation, the sodium ion transport is preferred in zigzag edge rather than the armchair edge. The use of this highly selective ionic transport property may endow phosphorene with new functionalities for novel chemical device applications.

Twin boundary-assisted lithium ion transport.

With the increased need for high-rate Li-ion batteries, it has become apparent that new electrode materials with enhanced Li-ion transport should be designed. Interfaces, such as twin boundaries (TBs), offer new opportunities to navigate the ionic transport within nanoscale materials. Here, we demonstrate the effects of TBs on the Li-ion transport properties in single crystalline SnO2 nanowires. It is shown that the TB-assisted lithiation pathways are remarkably different from the previously reported lithiation behavior in SnO2 nanowires without TBs. Our in situ transmission electron microscopy study combined with direct atomic-scale imaging of the initial lithiation stage of the TB-SnO2 nanowires prove that the lithium ions prefer to intercalate in the vicinity of the (101̅) TB, which acts as conduit for lithium-ion diffusion inside the nanowires. The density functional theory modeling shows that it is energetically preferred for lithium ions to accumulate near the TB compared to perfect neighboring lattice area. These findings may lead to the design of new electrode materials that incorporate TBs as efficient lithium pathways, and eventually, the development of next generation rechargeable batteries that surpass the rate performance of the current commercial Li-ion batteries.

Lithiation-induced shuffling of atomic stacks.

In rechargeable lithium-ion batteries, understanding the atomic-scale mechanism of Li-induced structural evolution occurring at the host electrode materials provides essential knowledge for design of new high performance electrodes. Here, we report a new crystalline-crystalline phase transition mechanism in single-crystal Zn-Sb intermetallic nanowires upon lithiation. Using in situ transmission electron microscopy, we observed that stacks of atomic planes in an intermediate hexagonal (h-)LiZnSb phase are "shuffled" to accommodate the geometrical confinement stress arising from lamellar nanodomains intercalated by lithium ions. Such atomic rearrangement arises from the anisotropic lithium diffusion and is accompanied by appearance of partial dislocations. This transient structure mediates further phase transition from h-LiZnSb to cubic (c-)Li2ZnSb, which is associated with a nearly "zero-strain" coherent interface viewed along the [001]h/[111]c directions. This study provides new mechanistic insights into complex electrochemically driven crystalline-crystalline phase transitions in lithium-ion battery electrodes and represents a noble example of atomic-level structural and interfacial rearrangements.

Interlayer-coupling-engineerable flat bands in twisted MoSi2N4bilayers.

The two-dimensional layered semiconductor MoSi2N4, which has several advantages including high strength, excellent stability, high hole mobility, and high thermal conductivity, was recently successfully synthesized using chemical vapor deposition. Based on first-principles calculations, we investigate the effects of the twist angle and interlayer distance variation on the electronic properties of twisted bilayer MoSi2N4. The flat bands are absent for twisted bilayer MoSi2N4when the twist angleθis reduced to 3.89°. Taking twisted bilayer MoSi2N4withθof 5.09° as an example, we find that flat bands emerge as the interlayer distance decreases. As the interlayer distance can be effectively modulated by hydrostatic pressure, we propose hydrostatic pressure as a knob for tailoring the flat bands in twisted bilayer MoSi2N4. Our findings provide theoretical support for extending the applications of MoSi2N4in strong correlation physics and superconductivity.

Efficient, narrow-band, and stable electroluminescence from organoboron-nitrogen-carbonyl emitter.

Organic light-emitting diodes (OLEDs) exploiting simple binary emissive layers (EMLs) blending only emitters and hosts have natural advantages in low-cost commercialization. However, previously reported OLEDs based on binary EMLs hardly simultaneously achieved desired comprehensive performances, e.g., high efficiency, low efficiency roll-off, narrow emission bands, and high operation stability. Here, we report a molecular-design strategy. Such a strategy leads to a fast reverse intersystem crossing rate in our designed emitter h-BNCO-1 of 1.79×105 s-1. An OLED exploiting a binary EML with h-BNCO-1 achieves ultrapure emission, a maximum external quantum efficiency of over 40% and a mild roll-off of 14% at 1000 cd·m-2. Moreover, h-BNCO-1 also exhibits promising operational stability in an alternative OLED exploiting a compact binary EML (the lifetime reaching 95% of the initial luminance at 1000 cd m-2 is ~ 137 h). Here, our work has thus provided a molecular-design strategy for OLEDs with promising comprehensive performance.

High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS2 van der Waals Epitaxial Heterostructures.

Two-dimensional transition metal dichalcogenide (TMDC) heterostructure is receiving considerable attention due to its novel electronic, optoelectronic, and spintronic devices with design-oriented and functional features. However, direct design and synthesis of high-quality TMDC/MnTe heterostructures remain difficult, which severely impede further investigations of semiconductor/magnetic semiconductor devices. Herein, the synthesis of high-quality vertically stacked WS2/MnTe heterostructures is realized via a two-step chemical vapor deposition method. Raman, photoluminescence, and scanning transmission electron microscopy characterizations reveal the high-quality and atomically sharp interfaces of the WS2/MnTe heterostructure. WS2/MnTe-based van der Waals field effect transistors demonstrate high rectification behavior with rectification ratio up to 106, as well as a typical p-n electrical transport characteristic. Notably, the fabricated WS2/MnTe photodetector exhibits sensitive and broadband photoresponse ranging from UV to NIR with a maximum responsivity of 1.2 × 103 A/W, a high external quantum efficiency of 2.7 × 105%, and fast photoresponse time of ∼50 ms. Moreover, WS2/MnTe heterostructure photodetectors possess a broadband image sensing capability at room temperature, suggesting potential applications in next-generation high-performance and broadband image sensing photodetectors.

Topological phase diagrams of bulk and monolayer TiS2-x Tex.

With the use of ab initio calculations, the topological phase diagrams of bulk and monolayer TiS(2-x) Te(x) are established. Whereas bulk TiS(2-x) Te(x) shows two strong topological phases [1;(000)] and [1;(001)] for 0.44

Doping monolayer graphene with single atom substitutions.

Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.