Wafer-scale single-crystal monolayer graphene grown on sapphire substrate.

The growth of inch-scale high-quality graphene on insulating substrates is desirable for electronic and optoelectronic applications, but remains challenging due to the lack of metal catalysis. Here we demonstrate the wafer-scale synthesis of adlayer-free ultra-flat single-crystal monolayer graphene on sapphire substrates. We converted polycrystalline Cu foil placed on Al2O3(0001) into single-crystal Cu(111) film via annealing, and then achieved epitaxial growth of graphene at the interface between Cu(111) and Al2O3(0001) by multi-cycle plasma etching-assisted-chemical vapour deposition. Immersion in liquid nitrogen followed by rapid heating causes the Cu(111) film to bulge and peel off easily, while the graphene film remains on the sapphire substrate without degradation. Field-effect transistors fabricated on as-grown graphene exhibited good electronic transport properties with high carrier mobilities. This work breaks a bottleneck of synthesizing wafer-scale single-crystal monolayer graphene on insulating substrates and could contribute to next-generation graphene-based nanodevices.

Correlation between two- and three-dimensional crystallographic lattices for epitaxial analysis. I. Theory.

The epitaxial growth of molecular crystals at single-crystalline surfaces is often strongly related to the first monolayer at the substrate surface. The present work presents a theoretical approach to compare three-dimensional lattices of epitaxially grown crystals with two-dimensional lattices of the molecules formed within the first monolayer. Real-space and reciprocal-space representations are considered. Depending on the crystallographic orientation relative to the substrate surface, proper linear combinations of the lattice vectors of the three-dimensional unit cell result in a rhomboid in the xy plane, representing a two-dimensional projection. Mathematical expressions are derived which provide a relationship between the six lattice parameters of the three-dimensional case and the three parameters obtained for the two-dimensional surface unit cell. It is found that rotational symmetries of the monolayers are reflected by the epitaxial order. Positive and negative orientations of the crystallographic contact planes are correlated with the mirror symmetry of the surface unit cells, and the corresponding mathematical expressions are derived. The method is exemplarily applied to data obtained in previous grazing-incidence X-ray diffraction (GIXD) measurements with sample rotation on thin films of the conjugated molecules 3,4;9,10-perylenetetracarboxylic dianhydride (PTCDA), 6,13-pentacenequinone (P2O), 1,2;8,9-dibenzopentacene (trans-DBPen) and dicyanovinyl-quaterthiophene (DCV4T-Et2) grown by physical vapor deposition on Ag(111) and Cu(111) single crystals. This work introduces the possibility to study three-dimensional crystal growth nucleated by an ordered monolayer by combining two different experimental techniques, GIXD and low-energy electron diffraction, which has been implemented in the second part of this work.

Correlation between two- and three-dimensional crystallographic lattices for epitaxial analysis. II. Experimental results.

While the crystal structure of the polymorph phase can be studied in three dimensions conveniently by X-ray methods like grazing-incidence X-ray diffraction (GIXD), the first monolayer is only accessible by surface-sensitive methods that allow the determination of a two-dimensional lattice. Here, GIXD measurements with sample rotation are compared with distortion-corrected low-energy electron diffraction (LEED) experiments on conjugated molecules: 3,4;9,10-perylenetetracarboxylic dianhydride (PTCDA), 6,13-pentacenequinone (P2O), 1,2;8,9-dibenzopentacene (trans-DBPen) and dicyanovinyl-quaterthiophene (DCV4T-Et2) grown by physical vapor deposition on Ag(111) and Cu(111) single crystals. For these molecular crystals, which exhibit different crystallographic lattices and crystal orientations as well as epitaxial properties, the geometric parameters of the three-dimensional lattice are compared with the corresponding geometry of the first monolayer. A comparison of the monolayer lattice from LEED investigations with the multilayer lattices determined by rotated GIXD experiments reveals a correlation between the first monolayer and the epitaxial growth of three-dimensional crystals together with lattice distortions and re-alignment of molecules. The selected examples show three possible scenarios of crystal growth on top of an ordered monolayer: (i) growth of a single polymorph, (ii) growth of three different polymorphs; in both cases the first monolayer serves as template. In the third case (iii) strong lattice distortion and distinct molecular re-alignments from the monolayer to epitaxially grown crystals are observed. This is the second part of our work concerning the correlation between two- and three-dimensional crystallographic lattices for epitaxial analysis. In the first part, the theoretical basis has been derived which provides a mathematical relationship between the six lattice parameters of the three-dimensional case and the three parameters obtained for the two-dimensional surface unit cell, together with their orientation to the single-crystalline substrate. In this work, a combined experimental approach of GIXD and LEED is introduced which can be used to investigate the effect of the epitaxial monolayer on the structural properties of molecular crystals grown on top.

Nonintuitive Surface Self-Assembly of Functionalized Molecules on Ag(111).

The fabrication of nanomaterials involves self-ordering processes of functional molecules on inorganic surfaces. To obtain specific molecular arrangements, a common strategy is to equip molecules with functional groups. However, focusing on the functional groups alone does not provide a comprehensive picture. Especially at interfaces, processes that govern self-ordering are complex and involve various physical and chemical effects, often leading to unexpected structures, as we showcase here on the example of a homologous series of quinones on Ag(111). Naively, one could expect that such quinones, which all bear the same functionalization, form similar motifs. In salient contrast, our joint theoretical and experimental study shows that profoundly different structures are formed. Using a machine-learning-based structure search algorithm, we find that this is due to a shift of the balance of three antagonizing driving forces: adsorbate-substrate interactions governing adsorption sites, adsorbate-adsorbate interactions favoring close packing, and steric hindrance inhibiting certain otherwise energetically beneficial molecular arrangements. The theoretical structures show excellent agreement with our experimental characterizations of the organic/inorganic interfaces, both for the unit cell sizes and the orientations of the molecules within. The nonintuitive interplay of similarly important interaction mechanisms will continue to be a challenging aspect for the design of functional interfaces. With a detailed examination of all driving forces, we are, however, still able to devise a design principle for self-assembly of functionalized molecules.

Searching for New Polymorphs by Epitaxial Growth.

The formation of unknown polymorphs due to the crystallization at a substrate surface is frequently observed. This phenomenon is much less studied for epitaxially grown molecular crystals since the unambiguous proof of a new polymorph is a challenging task. The existence of multiple epitaxial alignments of the crystallites together with the simultaneous presence of different polymorphs does not allow simple phase identification. We present grazing incidence X-ray diffraction studies on conjugated molecules like perylenetetracarboxylic dianhydride (PTCDA), pentacene, dibenzopentacene (trans-DBPen), and dicyanovinylquater-thiophene (DCV4T-Et2) grown by physical vapor deposition on single crystalline surfaces like Ag(111), Cu(111), and graphene. A new method for indexing the observed Bragg peaks allows the determination of the crystallographic unit cells so that the type of crystallographic phase can be clearly identified. This approach even works when several polymorphs are simultaneously present within a single sample as shown for DCV4T-Et2 on Ag(111). Additionally, epitaxial relationships between the epitaxially grown crystallites and the single crystalline surfaces are determined. In a subsequent step, the experimental data are used for the crystal structure solution of an unknown polymorph, as shown for the example trans-DBPen grown on Cu(111).

An efficient method for indexing grazing-incidence X-ray diffraction data of epitaxially grown thin films.

Crystal structure identification of thin organic films entails a number of technical and methodological challenges. In particular, if molecular crystals are epitaxially grown on single-crystalline substrates a complex scenario of multiple preferred orientations of the adsorbate, several symmetry-related in-plane alignments and the occurrence of unknown polymorphs is frequently observed. In theory, the parameters of the reduced unit cell and its orientation can simply be obtained from the matrix of three linearly independent reciprocal-space vectors. However, if the sample exhibits unit cells in various orientations and/or with different lattice parameters, it is necessary to assign all experimentally obtained reflections to their associated individual origin. In the present work, an effective algorithm is described to accomplish this task in order to determine the unit-cell parameters of complex systems comprising different orientations and polymorphs. This method is applied to a polycrystalline thin film of the conjugated organic material 6,13-pentacenequinone (PQ) epitaxially grown on an Ag(111) surface. All reciprocal vectors can be allocated to unit cells of the same lattice constants but grown in various orientations [sixfold rotational symmetry for the contact planes (102) and (102)]. The as-determined unit cell is identical to that reported in a previous study determined for a fibre-textured PQ film. Preliminary results further indicate that the algorithm is especially effective in analysing epitaxially grown crystallites not only for various orientations, but also if different polymorphs are present in the film.

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111).

2D materials such as hexagonal boron nitride (h-BN) are widely used to decouple organic molecules from metal substrates. Nevertheless, there are also indications in the literature for a significant hybridization, which results in a perturbation of the intrinsic molecular properties. In this work we study the electronic and optical properties as well as the lateral structure of tetraphenyldibenzoperiflanthene (DBP) on Ni(111) with and without an atomically thin h-BN interlayer to investigate its possible decoupling effect. To this end, we use in situ differential reflectance spectroscopy as an established method to distinguish between hybridized and decoupled molecules. By inserting an h-BN interlayer we fabricate a buried interface and show that the DBP molecules are well decoupled from the Ni(111) surface. Furthermore, a highly ordered DBP monolayer is obtained on h-BN/Ni(111) by depositing the molecules at a substrate temperature of 170 °C. The structural results are obtained by quantitative low-energy electron diffraction and low-temperature scanning tunneling microscopy. Finally, the investigation of the valence band structure by ultraviolet photoelectron spectroscopy shows that the low work function of h-BN/Ni(111) further decreases after the DBP deposition. For this reason, the h-BN-passivated Ni(111) surface may serve as potential n-type contact for future molecular electronic devices.

GIDVis: a comprehensive software tool for geometry-independent grazing-incidence X-ray diffraction data analysis and pole-figure calculations.

GIDVis is a software package based on MATLAB specialized for, but not limited to, the visualization and analysis of grazing-incidence thin-film X-ray diffraction data obtained during sample rotation around the surface normal. GIDVis allows the user to perform detector calibration, data stitching, intensity corrections, standard data evaluation (e.g. cuts and integrations along specific reciprocal-space directions), crystal phase analysis etc. To take full advantage of the measured data in the case of sample rotation, pole figures can easily be calculated from the experimental data for any value of the scattering angle covered. As an example, GIDVis is applied to phase analysis and the evaluation of the epitaxial alignment of pentacene-quinone crystallites on a single-crystalline Au(111) surface.