Sub-20 nm laser ablation for lithographic dry development.

Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a ∼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (∼600 nm diameter spot). We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development.

Sub-38 nm resolution tabletop microscopy with 13 nm wavelength laser light.

We have acquired images with a spatial resolution better than 38 nm by using a tabletop microscope that combines 13 nm wavelength light from a high-brightness tabletop laser and Fresnel zone plate optics. These results open a gateway to the development of compact and widely available extreme-ultraviolet imaging tools capable of inspecting samples in a variety of environments with a 15-20 nm spatial resolution and a picosecond time resolution.