Predictive Maintenance of Pins in the ECD Equipment for Cu Deposition in the Semiconductor Industry.

Nowadays, Predictive Maintenance is a mandatory tool to reduce the cost of production in the semiconductor industry. This paper considers as a case study a critical part of the electrochemical deposition system, namely, the four Pins that hold a wafer inside a chamber. The aim of the study is to replace the schedule of replacement of Pins presently based on fixed timing (Preventive Maintenance) with a Hardware/Software system that monitors the conditions of the Pins and signals possible conditions of failure (Predictive Maintenance). The system is composed of optical sensors endowed with an image processing methodology. The prototype built for this study includes one optical camera that simultaneously takes images of the four Pins on a roughly daily basis. Image processing includes a pre-processing phase where images taken by the camera at different times are coregistered and equalized to reduce variations in time due to movements of the system and to different lighting conditions. Then, some indicators are introduced based on statistical arguments that detect outlier conditions of each Pin. Such indicators are pixel-wise to identify small artifacts. Finally, criteria are indicated to distinguish artifacts due to normal operations in the chamber from issues prone to a failure of the Pin. An application (PINapp) with a user friendly interface has been developed that guides industry experts in monitoring the system and alerting in case of potential issues. The system has been validated on a plant at STMicroelctronics in Catania (Italy). The study allowed for understanding the mechanism that gives rise to the rupture of the Pins and to increase the time of replacement of the Pins by a factor at least 2, thus reducing downtime.

Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate.

The molecular doping (MD) process is based on the deposition of dopant-containing molecules over the surface of a semiconductor substrate, followed by the thermal diffusion step. Previous studies suggest that, during the deposition, the molecules nucleate clusters, and at prolonged deposition times, they grow into self-assembled layers on the sample to be doped. Little is known about the influence of nucleation kinetics on the final properties of these layers and how they change when we modify the solution properties. In this work, we examine the nucleation rate and the molecular surface coverage kinetics of diethyl-propyl phosphonate on silicon at different solution concentrations and how these conditions influence the final electrical properties of the doped samples. We present a high-resolution morphological characterization of the as-deposited molecules together with the electrical results of the final doped samples. The experimental results show a non-obvious behavior, explained through understanding of the competition between the molecules' physisorption and chemisorption mechanisms. As a consequence, due to the deeper knowledge of the deposition phase, a finer tuning of the conductive properties of MD-doped samples is achieved.

Perovskite solar cells from the viewpoint of innovation and sustainability.

Innovation is essential around the themes of climate change and sustainability. Commercial photovoltaics (PV) have noticeably contributed to getting to 22.1% share of the gross final energy consumption in Europe from renewable sources in 2020 but a steep further increase is urgent in the near future. Over the last few years, great success has been achieved by perovskites applied to PV, with mixed anions and cations in shared lattices that reached record efficiency values close to those of Si in laboratory-scale solar cells (∼26%). Their use has recently shed light on a medium/long-term compositional instability that arises from the partial miscibility of the species with similar role in the atomic lattice. The chemical route to prepare the materials for Perovskite Solar Cells (PSCs) also needs to be critically reviewed. Material waste and reuse are other concerns to be faced. This perspective paper indeed tackles some aspects for innovation and sustainability on the PSC field for production purposes. Some hints for technologically affordable processes based on in-vacuum deposition of Perovskites are provided in light of their sustainability and for the need to reduce production/maintenance costs. It is also discussed how to make in-vacuum production further competitive by boosting the material quality. Innovation is also projected into the theme of making sustainable choices for device architectures and materials. Carbon-based PSCs are highly focused since they allow avoiding the use of complex, unstable and costly HTLs. From the material side, pros and cons of using fully inorganic CsPbI3 are commented, framed by the current revival of single-cation perovskites. CsPbI3, in particolar, enables recycling and reuse initiatives thanks to the overall mass preservation under degradation. Some closing remarks are provided on the safe use of Pb as its effective sequestration before release from the PSC into the environment is properly engineered. We lastly trust that initiatives bringing together academic and industrial know-how in complementary fields able to take up responsible innovation will contribute to accelerating the ecological transition and will enable the societal transformation to fulfil the 2050 EU agenda for a sustainable future.

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis.

Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimising the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled also taking into account the interface state density in a tunnelling relaxation model and it allowed us to locate traps within a tunnelling distance of up to 1.3 nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a non-abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiO x matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.

Ultrafast Generation of Unconventional {001} Loops in Si.

Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquidlike droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond time scale.

Stability of solution-processed MAPbI3 and FAPbI3 layers.

We provide a semi-empirical model based on in situ degradation measurements to predict the durability of hybrid perovskite materials under simulated thermal operation conditions. In the model, the degradation path of MAPbI3 layers is proved to follow an Arrhenius-type law. The predictive role is played by the activation energy combined with its pre-exponential factor. Our comparative study under moisture conditions with respect to vacuum and nitrogen treatments has assessed the occurrence of an intrinsic dynamic exchange of protons between the organic cations and the inorganic cage with a direct impact on the lattice stability, for which the presence of water molecules is not mandatory. This mutual interaction produces defects inside the material and volatile species, such as HI, CH3NH2 or MAI, with an associated experimental activation energy of 1.54 eV measured under vacuum conditions in dark. This value is comparable to that calculated by the density functional theory for defect generation in MAPbI3. In air, the action of water molecules reduces the activation energy for proton exchanges in dark to 0.96 eV. As an alternative solution to increase the material stability, we demonstrate that the substitution of methylammonium (MA(+)) with the formamidinium (FA(+)) cations inside the inorganic cage gives greater robustness to the overall lattice and extends the material durability due to a different interaction between the organic molecules and the inorganic cage. This definitely supports the use of FAPbI3 in applications, provided its structure can be stabilized in the dark phase at room temperature.

Analysis of the role of the particle-wall interaction on the separation efficiencies of field flow fractionation dielectrophoretic devices.

In this paper we have used both analytical models and finite element simulations to analyze the role of the particle-wall dipole interaction in field-flow fractionation dielectrophoretic (FFF-DEP) devices. We identify the existence of "anomalous" regions where the dielectrophoretic response is altered, independently of the complex dielectric permittivity of the particles and suspending medium. In these regions the interaction between the particle and the conductive (isolating) walls induces cohesive (repulsive) forces, independently of the Clausius-Mossotti term. We quantify the impact of such an effect, which can critically decrease the specificity and sensitivity of both continuous- and batch-mode FFF-DEP. We find a scale invariant relation correlating the particles radius (Rp ) and the electrodes width (Wel ), which permits the design of dielectrophoretic schema capable of avoiding the generation of such regions. Specifically, to avoid the generation of the anomalous DEP regions, Wel should be chosen smaller than ∼5.2 Rp . For this reason, interdigitate schema with electrode widths of 14 µm and gaps of 50 µm could improve the separation efficiency of FFF-DEP devices in the case of rare cells separation in blood samples.

Similar Structural Dynamics for the Degradation of CH3 NH3 PbI3 in Air and in Vacuum.

We investigate the degradation path of MAPbI3 (MA=methylammonium) films over flat TiO2 substrates at room temperature by means of X-ray diffraction, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The degradation dynamics is found to be similar in air and under vacuum conditions, which leads to the conclusion that the occurrence of intrinsic thermodynamic mechanisms is not necessarily linked to humidity. The process has an early stage, which drives the starting tetragonal lattice in the direction of a cubic atomic arrangement. This early stage is followed by a phase change towards PbI2 . We describe how this degradation product is structurally coupled with the original MAPbI3 lattice through the orientation of its constituent PbI6 octahedra. Our results suggest a slight octahedral rearrangement after volatilization of HI+CH3 NH2 or MAI, with a relatively low energy cost. Our experiments also clarify why reducing the interfaces and internal defects in the perovskite lattice enhances the stability of the material.

Extended defects formation in nanosecond laser-annealed ion implanted silicon.

Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.

Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodes.

BACKGROUND: We aimed to investigate the effect of cell-cell dipole interactions in the equilibrium distributions in dielectrophoretic devices. METHODS: We used a three dimensional coupled Monte Carlo-Poisson method to theoretically study the final distribution of a system of uncharged polarizable particles suspended in a static liquid medium under the action of an oscillating non-uniform electric field generated by polynomial electrodes. The simulated distributions have been compared with experimental ones observed in the case of MDA-MB-231 cells in the same operating conditions. RESULTS: The real and simulated distributions are consistent. In both cases the cells distribution near the electrodes is dominated by cell-cell dipole interactions which generate long chains. CONCLUSIONS: The agreement between real and simulated cells' distributions demonstrate the method's reliability. The distribution are dominated by cell-cell dipole interactions even at low density regimes (105 cell/ml). An improved estimate for the density threshold governing the interaction free regime is suggested.

Interface Properties of MoS2 van der Waals Heterojunctions with GaN.

The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.

Lead Detection in a Gig-Lox TiO2 Sponge by X-ray Reflectivity.

The importance of lead analysis in environmental matrices becomes increasingly relevant due to the anthropogenic spread of toxic species in nature. Alongside the existing analytical methods to detect lead in a liquid environment, we propose a new dry approach for lead detection and measurement based on its capture from a liquid solution by a solid sponge and subsequent quantification based on X-ray analyses. The detection method exploits the relationship between the electronic density of the solid sponge, which depends on the captured lead, and the critical angle for total reflection of the X-rays. For this purpose, gig-lox TiO2 layers, grown by modified sputtering physical deposition, were implemented for their branched multi-porosity spongy structure that is ideal for capturing lead atoms or other metallic ionic species in a liquid environment. The gig-lox TiO2 layers grown on glass substrates were soaked into aqueous solutions containing different concentrations of Pb, dried after soaking, and finally probed through X-ray reflectivity analyses. It has been found that lead atoms are chemisorbed onto the many available surfaces within the gig-lox TiO2 sponge by establishing stable oxygen bonding. The infiltration of lead into the structure causes an increase in the overall electronic density of the layer and, thus, an increment of its critical angle. Based on the established linear relationship between the amount of lead adsorbed and the augmented critical angle, a standardized quantitative procedure to detect Pb is proposed. The method can be, in principle, applied to other capturing spongy oxides and toxic species.

Atomistic Insights into Ultrafast SiGe Nanoprocessing.

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Early Stages of Aluminum-Doped Zinc Oxide Growth on Silicon Nanowires.

Aluminum-doped zinc oxide (AZO) is an electrically conductive and optically transparent material with many applications in optoelectronics and photovoltaics as well as in the new field of plasmonic metamaterials. Most of its applications contemplate the use of complex and nanosized materials as substrates onto which the AZO forms the coating layer. Its morphological characteristics, especially the conformality and crystallographic structure, are crucial because they affect its opto-electrical response. Nevertheless, it was difficult to find literature data on AZO layers deposited on non-planar structures. We studied the AZO growth on silicon-nanowires (SiNWs) to understand its morphological evolution when it is formed on quasi one-dimensional nanostructures. We deposited by sputtering different AZO thicknesses, leading from nanoclusters until complete incorporation of the SiNWs array was achieved. At the early stages, AZO formed crystalline nano-islands. These small clusters unexpectedly contained detectable Al, even in these preliminary phases, and showed a wurtzite crystallographic structure. At higher thickness, they coalesced by forming a conformal polycrystalline shell over the nanostructured substrate. As the deposition time increased, the AZO conformal deposition led to a polycrystalline matrix growing between the SiNWs, until the complete array incorporation and planarization. After the early stages, an interesting phenomenon took place leading to the formation of hook-curved SiNWs covered by AZO. These nanostructures are potentially very promising for optical, electro-optical and plasmonic applications.

Structural Characterization and Adsorption Properties of Dunino Raw Halloysite Mineral for Dye Removal from Water.

In this work, raw halloysite mineral from Dunino (Poland) has been characterized and tested as an efficient and low-cost adsorbent for dye removal from water. The morphology and structure of this clay were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and the chemical composition was evaluated by means of X-ray fluorescence spectroscopy (XRF), energy dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS). The results showed that it is made up of both platy and tubular structures, mainly composed of Si, Al, and O. Iron oxide particles covering the platy structures were also observed. The surface charge of halloysite was measured by z-potential measurements and by the evaluation of the point of zero charge. The clay was tested as an adsorbent for the removal of positively and negatively charged dye molecules, i.e., methylene blue (MB) and methyl orange (MO), both separately and in a mixed-dye solution. Halloysite showed the ability to efficiently and selectively remove MB molecules by adsorption, both in a single-dye solution and in a mixed one. The adsorption of positive dyes on the clay surface mainly occurred through ion exchange at negatively charged sites on its surface. The possibility of regenerating the clay for further dye removal processes is also shown.

Exploring the Structural Competition between the Black and the Yellow Phase of CsPbI3.

The realization of stable inorganic perovskites is crucial to enable low-cost solution-processed photovoltaics. However, the main candidate material, CsPbI3, suffers from a spontaneous phase transition at room temperature towards a photo-inactive orthorhombic δ-phase (yellow phase). Here we used theoretical and experimental methods to study the structural and electronic features that determine the stability of the CsPbI3 perovskite. We argued that the two physical characteristics that favor the black perovskite phase at low temperatures are the strong spatial confinement in nanocrystalline structures and the level of electron doping in the material. Within this context, we discussed practical procedures for the realization of long-lasting inorganic lead halide perovskites.

Study of the Molecule Adsorption Process during the Molecular Doping.

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules-substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation.

We present a method for the simulation of the kinetic evolution in the sub µs timescale for composite materials containing regions occupied by alloys, compounds, and mixtures belonging to the Ni-Si-C ternary system. Pulsed laser irradiation (pulses of the order of 100 ns) promotes this evolution. The simulation approach is formulated in the framework of the phase-field theory and it consists of a system of coupled non-linear partial differential equations (PDEs), which considers as variables the following fields: the laser electro-magnetic field, the temperature, the phase-field and the material (Ni, Si, C, C clusters and Ni-silicides) densities. The model integrates a large set of materials and reaction parameters which could also self-consistently depend on the model variables. A parameter calibration is also proposed, specifically suited for the wavelength of a widely used class of excimer lasers (λ = 308 nm). The model is implemented on a proprietary laser annealing technology computer-aided design (TCAD) tool based on the finite element method (FEM). This integration allows, in principle, numerical solutions in systems of any dimension. Here we discuss the complex simulation trend in the one-dimensional case, considering as a starting state, thin films on 4H-SiC substrates, i.e., a configuration reproducing a technologically relevant case study. Simulations as a function of the laser energy density show an articulated scenario, also induced by the variables' dependency of the materials' parameters, for the non-melting, partial-melting and full-melting process conditions. The simulation results are validated by post-process experimental analyses of the microstructure and composition of the irradiated samples.

New Approaches and Understandings in the Growth of Cubic Silicon Carbide.

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

Local Order and Rotational Dynamics in Mixed A-Cation Lead Iodide Perovskites.

Halide perovskites containing a mixture of formamidinium (FA+), methylammonium (MA+) and cesium (Cs+) cations are the actual standard for obtaining record-efficiency perovskite solar cells. Although the compositional tuning that brings to optimal performance of the devices has been largely established, little is understood on the role of even small quantities of MA+ or Cs+ in stabilizing the black phase of FAPbI3 while boosting its photovoltaic yield. In this paper, we use Car-Parrinello molecular dynamics in large supercells containing different ratios of FA+ and either MA+ or Cs+, in order to study the structural and kinetic features of mixed perovskites at room temperature. Our analysis shows that cation mixing relaxes the rotational disorder of FA+ molecules by preferentially aligning their axis toward ⟨100⟩ cubic directions. The phenomenon stems from the introduction of additional local minima in the energetic landscape, which are absent in pure FAPbI3 crystals. As a result, a higher structural order is achieved, characterized by a pronounced octahedral tilting and a lower vibrational activity for the inorganic framework. We show that both MA+ and Cs+ are qualified for this enhancement, with Cs+ being particularly effective when diluted within the FAPbI3 perovskite.