Coevaporation Stabilizes Tin-Based Perovskites in a Single Sn-Oxidation State.

Chemically processed methylammonium tin-triiodide (CH3NH3SnI3) films include Sn in different oxidation states, leading to poor stability and low power conversion efficiency of the resulting solar cells (PSCs). The development of absorbers with Sn [2+] only has been identified as one of the critical steps to develop all Sn-based devices. Here, we report on coevaporation of CH3NH3I and SnI2 to obtain absorbers with Sn being only in the preferred oxidation state [+2] as confirmed by X-ray photoelectron spectroscopy. The Sn [4+]-free absorbers exhibit smooth highly crystalline surfaces and photoluminescence measurements corroborating their excellent optoelectronic properties. The films show very good stability under heat and light. Photoluminescence quantum yields up to 4 × 10-3 translate in a quasi Fermi-level splittings exceeding 850 meV under one sun equivalent conditions showing high promise in developing lead-free, high efficiency, and stable PSCs.

Optical properties of Cu2ZnSnSe4 thin films and identification of secondary phases by spectroscopic ellipsometry.

We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu2ZnSnSe4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe2 and to extrapolate the band gap values of CZTSe phase.

Assessment of crystal quality and unit cell orientation in epitaxial Cu2ZnSnSe4 layers using polarized Raman scattering.

We use polarization-resolved Raman spectroscopy to assess the crystal quality of epitaxial kesterite layers. It is demonstrated for the example of epitaxial Cu2ZnSnSe4 layers on GaAs(001) that "standing" and "lying" kesterite unit cell orientations (c'-axis parallel / perpendicular to the growth direction) can be distinguished by the application of Raman tensor analysis. From the appearance of characteristic intensity oscillations when the sample is rotated one can distinguish polycrystalline and epitaxial layers. The method can be transferred to kesterite layers oriented in any crystal direction and can shed light on the growth of such layers in general.

The three A symmetry Raman modes of kesterite in Cu2ZnSnSe4.

We investigate CZTSe films by polarization dependent Raman spectroscopy. The main peaks at 170 cm(-1), and 195 cm(-1) are found to have A symmetry. The Raman signal at 170 cm(-1) is found to be composed of two modes at 168 cm(-1) and 172 cm(-1). We attribute these three Raman peaks to the three A symmetry modes predicted for kesterite ordered Cu(2)ZnSnSe(4). The main Raman peak is asymmetrically broadened towards lower energies. Possible sources of the broadening are tested through temperature and depth dependent measurements. The broadening is attributed to phonon confinement effects related to the presence of lattice defects.

Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.

Alkali postdeposition treatments of Cu(In,Ga)Se2 absorbers with KF, RbF, and CsF have led to remarkable efficiency improvements for chalcopyrite thin film solar cells. However, the effect of such treatments on the electronic properties and defect physics of the chalcopyrite absorber surfaces are not yet fully understood. In this work, we use scanning tunneling spectroscopy and X-ray photoelectron spectroscopy to compare the surface defect electronic properties and chemical composition of RbF-treated and nontreated absorbers. We find that the RbF treatment is effective in passivating electronic defect levels at the surface by preventing surface oxidation. Our X-ray photoelectron spectroscopy (XPS) data points to the presence of chemisorbed Rb on the surface with a bonding configuration similar to that of a RbInSe2 bulk compound. Yet, a quantitative analysis indicates Rb coverage in the submonolayer regime, which is likely causing the surface passivation. Furthermore, ab initio calculations confirm that RbF-treated surfaces are less prone to oxidation (in the form of Ga, In, and Se oxides) than bare chalcopyrite surfaces. In addition, elemental diffusion of Rb along with Na, Cu, and Ga is found to occur when the samples are annealed under ultrahigh vacuum conditions. Magnetic sector secondary ion mass spectrometry measurements indicate that there is a homogeneous spatial distribution of Rb on the surface both before and after annealing, albeit with an increased concentration at the surface after heat treatment. Depth-resolved magnetic sector secondary ion mass spectrometry measurements show that Rb diffusion within the bulk occurs predominantly along grain boundaries. Scanning tunneling and XPS measurements after subsequent annealing steps demonstrate that the Rb accumulation at the surface leads to the formation of metallic Rb phases, involving a significant increase of electronic defect levels and/or surface dipole formation. These results strongly suggest a deterioration of the absorber-window interface because of increased recombination losses after the heat-induced diffusion of Rb toward the interface.

Single-crystalline TiO2 nanoparticles for stable and efficient perovskite modules.

Despite the remarkable progress in power conversion efficiency of perovskite solar cells, going from individual small-size devices into large-area modules while preserving their commercial competitiveness compared with other thin-film solar cells remains a challenge. Major obstacles include reduction of both the resistive losses and intrinsic defects in the electron transport layers and the reliable fabrication of high-quality large-area perovskite films. Here we report a facile solvothermal method to synthesize single-crystalline TiO2 rhombohedral nanoparticles with exposed (001) facets. Owing to their low lattice mismatch and high affinity with the perovskite absorber, their high electron mobility and their lower density of defects, single-crystalline TiO2 nanoparticle-based small-size devices achieve an efficiency of 24.05% and a fill factor of 84.7%. The devices maintain about 90% of their initial performance after continuous operation for 1,400 h. We have fabricated large-area modules and obtained a certified efficiency of 22.72% with an active area of nearly 24 cm2, which represents the highest-efficiency modules with the lowest loss in efficiency when scaling up.

The consequences of kesterite equilibria for efficient solar cells.

Copper-zinc-tin-chalcogenide kesterites, Cu(2)ZnSnS(4) and Cu(2)ZnSnSe(4) (CZTS(e)) are ideal candidates for the production of thin film solar cells on large scales due to the high natural abundance of all constituents, a tunable direct band gap ranging from 1.0 to 1.5 eV, a large absorption coefficient, and demonstrated power conversion efficiencies close to 10%. However, Sn losses through desorption of SnS(e) from CZTS(e) at elevated temperatures (above 400 °C) impede the thorough control of film composition and film homogeneity. No robust and feasible fabrication process is currently available. Here we show that understanding the formation reaction of the kesterite absorber is the key to control the growth process and to drastically improve the solar cell efficiency. Furthermore, we demonstrate that this knowledge can be used to simplify the four-dimensional parameter space (spanned by the four different elements) to an easy and robust two-dimensional process. Sufficiently high partial pressures of SnS(e) and S(e) (a) prevent the decomposition reaction of the CZTS(e) at elevated temperatures and (b) introduce any missing Sn into a Sn-deficient film. This finding enables us to simplify the precursor to a film containing only Cu and Zn, whereas Sn and S(e) are introduced from the gas phase by a self-regulating process.

Co-evaporation of CH3NH3PbI3: How Growth Conditions Impact Phase Purity, Photostriction, and Intrinsic Stability.

Hybrid organic-inorganic perovskites are highly promising candidates for the upcoming generation of single- and multijunction solar cells. Despite their extraordinarily good semiconducting properties, there is a need to increase the intrinsic material stability against heat, moisture, and light exposure. Understanding how variations in synthesis affect the bulk and surface stability is therefore of paramount importance to achieve a rapid commercialization on large scales. In this work, we show for the case of methylammonium lead iodide that a thorough control of the methylammonium iodide (MAI) partial pressure during co-evaporation is essential to limit photostriction and reach phase purity, which dictate the absorber stability. Kelvin probe force microscopy measurements in ultrahigh vacuum corroborate that off-stoichiometric absorbers prepared with an excess of MAI partial pressure exhibit traces of low-dimensional (two-dimensional, 2D) perovskites and stacking faults that have adverse effects on the intrinsic material stability. Under optimized growth conditions, time-resolved photoluminescence and work functions mapping corroborate that the perovskite films are less prone to heat and light degradation.

Nanoscale interfacial engineering enables highly stable and efficient perovskite photovoltaics.

We present a facile molecular-level interface engineering strategy to augment the long-term operational and thermal stability of perovskite solar cells (PSCs) by tailoring the interface between the perovskite and hole transporting layer (HTL) with a multifunctional ligand 2,5-thiophenedicarboxylic acid. The solar cells exhibited high operational stability (maximum powering point tracking at one sun illumination) with a stabilized T S80 (the time over which the device efficiency reduces to 80% after initial burn-in) of ≈5950 h at 40 °C and a stabilized power conversion efficiency (PCE) over 23%. The origin of high device stability and performance is correlated to the nano/sub-nanoscale molecular level interactions between ligand and perovskite layer, which is further corroborated by comprehensive multiscale characterization. These results provide insights into the modulation of the grain boundaries, local density of states, surface bandgap, and interfacial recombination. Chemical analysis of aged devices showed that molecular passivation suppresses interfacial ion diffusion and inhibits the photoinduced I2 release that irreversibly degrades the perovskite. The interfacial engineering strategies enabled by multifunctional ligands can expedite the path towards stable PSCs.

Trails of kilovolt ions created by subsurface channeling.

Using scanning tunneling microscopy, we observe the damage trails produced by keV noble-gas ions incident at glancing angles onto Pt(111). Surface vacancies and adatoms aligned along the ion trajectory constitute the ion trails. Atomistic simulations reveal that these straight trails are produced by nuclear (elastic) collisions with surface layer atoms during subsurface channeling of the projectiles. In a small energy window around 5 keV, Xe+ ions create vacancy grooves that mark the ion trajectory with atomic precision. The asymmetry of the adatom production on the two sides of the projectile path is traced back to the asymmetry of the ion's subsurface channel.

Fermi-level pinning in methylammonium lead iodide perovskites.

Hybrid organic inorganic perovskites are ideal candidates for absorber layers in next generation thin film photovoltaics. The polycrystalline nature of these layers imposes substantial complications for the design of high efficiency devices since the optoelectronic properties can vary on the nanometre scale. Here we show via scanning tunnelling microscopy and spectroscopy that different grains and grain facets exhibit variations in the local density of states. Modeling of the tunneling spectroscopy curves allows us to quantify the density and fluctuations of surface states and estimate the variations in workfunction on the nanometre scale. The simulations corroborate that the high number of surface states leads to Fermi-level pinning of the methylammonium lead iodide surfaces. We do not observe a variation of the local density of states at the grain boundaries compared to the grain interior. These results are in contrast to other reported SPM measurements in literature. Our results show that most of the fluctuations of the electrical properties in these polycrystalline materials arise due to grain to grain variations and not due to distinct electronic properties of the grain boundaries. The measured workfunction changes at the different grains result in local variations of the band alignment with the carrier selective top contact and the varying number of surface states influence the recombination activity in the devices.

High surface recombination velocity limits Quasi-Fermi level splitting in kesterite absorbers.

Kelvin Probe Force Microscopy, Photoluminescence imaging and numerical simulations are used to study the surfaces of Cu2ZnSnSe4 absorber layers. In particular, the effect of NH4OH and annealing under ambient conditions is investigated. We observe drastic changes in the measured quasi Fermi-level splitting (QFLs) after chemical cleaning of the absorber surface with NH4OH, which is traced back to a removal of the surface inversion. Air annealing recovers surface inversion, which reduces the recombination current at the surface. Annealing above 200 °C leads to a permanent change in the work function which cannot be modified by NH4OH etching anymore. This modification makes the QFLs insensitive to surface cleaning and explains why air annealing in Cu2ZnSnSe4 is important. From numerical simulations we find that a large surface recombination velocity needs to be present in order to describe the experimental observations.

Rapid coarsening of ion beam ripple patterns by defect annihilation.

Ripple patterns formed on Pt(111) through grazing incidence ion beam erosion coarsen rapidly. At and below 450 K coarsening of the patterns is athermal and kinetic, unrelated to diffusion and surface free energy. Similar to the situation for sand dunes, coarsening takes place through annihilation reactions of mobile defects in the pattern. The defect velocity derived on the basis of a simple model agrees quantitatively with the velocity of monatomic steps illuminated by the ion beam.

Spiral growth and step edge barriers.

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same large scale shape when a significant step-edge barrier suppresses interlayer transport. The higher vertical growth rate of the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step-edge barrier.

Superior regularity in erosion patterns by planar subsurface channeling.

The onset of pattern formation through exposure of Pt(111) with 5 keV Ar(+) ions at grazing incidence has been studied at 550 K by scanning tunneling microscopy and is supplemented by molecular-dynamics simulations of single ion impacts. A consistent description of pattern formation in terms of atomic scale mechanisms is given. Most surprisingly, pattern formation depends crucially on the angle of incidence of the ions. As soon as this angle allows subsurface channeling of the ions, pattern regularity and alignment with respect to the ion beam greatly improves. These effects are traced back to the positionally aligned formation of vacancy islands through the damage created by the ions at dechanneling locations.