The Application of Piecewise Regularization Reconstruction to the Calibration of Strain Beams.

Standard beams are mainly used for the calibration of strain sensors using their load reconstruction models. However, as an ill-posed inverse problem, the solution to these models often fails to converge, especially when dealing with dynamic loads of different frequencies. To overcome this problem, a piecewise Tikhonov regularization method (PTR) is proposed to reconstruct dynamic loads. The transfer function matrix is built both using the denoised excitations and the corresponding responses. After singular value decomposition (SVD), the singular values are divided into submatrices of different sizes by utilizing a piecewise function. The regularization parameters are solved by optimizing the piecewise submatrices. The experimental result shows that the MREs of the PTR method are 6.20% at 70 Hz and 5.86% at 80 Hz. The traditional Tikhonov regularization method based on GCV exhibits MREs of 28.44% and 29.61% at frequencies of 70 Hz and 80 Hz, respectively, whereas the L-curve-based approach demonstrates MREs of 29.98% and 18.42% at the same frequencies. Furthermore, the PREs of the PTR method are 3.54% at 70 Hz and 3.73% at 80 Hz. The traditional Tikhonov regularization method based on GCV exhibits PREs of 27.01% and 26.88% at frequencies of 70 Hz and 80 Hz, respectively, whereas the L-curve-based approach demonstrates PREs of 29.50% and 15.56% at the same frequencies. All in all, the method proposed in this paper can be extensively applied to load reconstruction across different frequencies.

A Novel Pathway for Porcine Epidemic Diarrhea Virus Transmission from Sows to Neonatal Piglets Mediated by Colostrum.

The mechanisms of colostrum-mediated virus transmission are difficult to elucidate because of the absence of experimental animal models and the difficulties in tissue sample collection from mothers in the peripartum period. Porcine epidemic diarrhea virus (PEDV) is a reemerging enteropathogenic coronavirus that has catastrophic impacts on the global pig industry. PEDV primarily infects neonatal piglets by multiple routes, especially 1- to 2-day-old neonatal piglets. Here, our epidemiological investigation and animal challenge experiments revealed that PEDV could be vertically transmitted from sows to neonatal piglets via colostrum, and CD3+ T cells in the colostrum play an important role in this process. The results showed that PEDV colonizing the intestinal epithelial cells (IECs) of orally immunized infected sows could be transferred to CD3+ T cells located just beneath the IECs. Next, PEDV-carrying CD3+ T cells, with the expression of integrin α4ß7 and CCR10, migrate from the intestine to the mammary gland through blood circulation. Arriving in the mammary gland, PEDV-carrying CD3+ T cells could be transported across mammary epithelial cells (MECs) into the lumen (colostrum), as illustrated by an autotransfusion assay and an MECs/T coculture system. The PEDV-carrying CD3+ T cells in colostrum could be interspersed between IECs of neonatal piglets, causing intestinal infection via cell-to-cell contact. Our study demonstrates for the first time that colostrum-derived CD3+ T cells comprise a potential route for the vertical transmission of PEDV. IMPORTANCE The colostrum represents an important infection route for many viruses. Here, we demonstrate the vertical transmission of porcine epidemic diarrhea virus (PEDV) from sows to neonatal piglets via colostrum. PEDV colonizing the intestinal epithelial cells could transfer the virus to CD3+ T cells located in the sow intestine. The PEDV-carrying CD3+ T cells in the sow intestine, with the expression of integrin α4ß7 and CCR10, arrive at the mammary gland through blood circulation and are transported across mammary epithelial cells into the lumen, finally leading to intestinal infection via cell-to-cell contact in neonatal piglets. Our study not only demonstrates an alternative route of PEDV infection but also provides an animal model of vertical transmission of human infectious disease.

Multiple-Degree-of-Freedom Modeling and Simulation for Seismic-Grade Sigma-Delta MEMS Capacitive Accelerometers.

The high-order mechanical resonances of the sensing element in a high-vacuum environment can significantly degrade the noise and distortion performance of seismic-grade sigma-delta MEMS capacitive accelerometers. However, the current modeling approach is unable to evaluate the effects of high-order mechanical resonances. This study proposes a novel multiple-degree-of-freedom (MDOF) model to evaluate the noise and distortion induced by high-order mechanical resonances. Firstly, the MDOF dynamic equations of the sensing element are derived using the principle of modal superposition and Lagrange's equations. Secondly, a fifth-order electromechanical sigma-delta system of the MEMS accelerometer is established in Simulink based on the dynamic equations of the sensing element. Then, the mechanism through which the high-order mechanical resonances degrade the noise and distortion performances is discovered by analyzing the simulated result. Finally, a noise and distortion suppression method is proposed based on the appropriate improvement in high-order natural frequency. The results show that the low-frequency noise drastically decreases from about -120.5 dB to -175.3 dB after the high-order natural frequency increases from about 130 kHz to 455 kHz. The harmonic distortion also reduces significantly.

A Study on the Harmonic Distortion of Seismic-Grade Sigma-Delta MEMS Accelerometers Using a Multiple Degree-of-Freedom Model.

Harmonic distortion is one of the dominant factors limiting the overall signal-to-noise and distortion ratio of seismic-grade sigma-delta MEMS accelerometers. This study investigates harmonic distortion based on the multiple degree-of-freedom model (MDM) established in our previous study. The main advantage of using an MDM is that the effect of finger flexibility on harmonic distortion is considered. Initially, the nonlinear relationship between the input acceleration and output signal is derived using the MDM. Then, harmonic distortion is simulated and described in terms of the nonlinear input-output relationship. It is found that finger flexibility and parasitic capacitance mismatch both decrease harmonic distortion. Finally, the experimental testing of harmonic distortion is implemented. By reducing the finger length to realize a higher stiffness and compensating for the parasitic capacitance mismatch, the total harmonic distortion decreases from -66.8 dB to -86.9 dB.

Inhibition of PFKFB3 in HER2-positive gastric cancer improves sensitivity to trastuzumab by inducing tumour vessel normalisation.

BACKGROUND: Multiple mechanisms have been proposed that lead to reduced effectiveness of trastuzumab in HER2-positive gastric cancer (GC), yet resistance to trastuzumab remains a challenge in clinics. METHODS: We established trastuzumab-resistant cells and patient-derived xenografts models to measure metabolic levels and vascular density and shape. The HER2-positive GC patient samples were used to determine clinical significance. We also measured protein expression and phosphorylation modifications to determine those alterations related to resistance. In vivo studies combining inhibitor of PFKFB3 with trastuzumab corroborated the in vitro findings. RESULTS: The 6-phosphofructo-2-kinase (PFKFB3)-mediated trastuzumab resistance pathways in HER2-positive GC by activating the glycolytic pathway. We also found vessels are chaotic and destabilised in the tumour during the trastuzumab resistance process. Inhibition of PFKFB3 significantly diminished tumour proliferation and promoted vessel normalisation in the patient-derived xenograft model. Mechanistically, PFKFB3 promoted the secretion of CXCL8 into the tumour microenvironment, and phosphorylated Ser1151 of ERBB2, enhancing the transcription of CXCL8 by activating the PI3K/AKT/NFκB p65 pathway. CONCLUSIONS: Our current findings discover that PFKFB3 inhibitors might be effective tools to overcome adjuvant therapy resistance in HER2-positive GC and reshaping the microenvironment by normalising tumour vessels is a novel strategy to overcome trastuzumab resistance.

FAM98A promotes resistance to 5-fluorouracil in colorectal cancer by suppressing ferroptosis.

BACKGROUND: FAM98A is a microtubule-associated protein involved in cell proliferation and migration, and is frequently dysregulated in epithelial cancers. But its role in the development of colorectal cancer (CRC) cancer remains unknown. METHODS: Immunohistochemical analysis was performed to examine the expression of FAM98A in CRC samples. We also investigated the effects of abnormal expression on the biological behavior of colorectal cancer cells both in vitro and in vivo. Immunoblotting and immunoprecipitation were used to screen FAM98A-related signalling pathways and downstream factors. RESULTS: FAM98A was upregulated in CRC tissues and CRC cell lines. Overexpression of FAM98A promoted cell proliferation and recovered 5-FU suppressed CRC cell proliferation both in vitro and in vivo. In addition, the Enhanced expression of FAM98A inhibited ferroptosis in CRC cells by activating the translation of xCT in stress granules (SGs). Furthermore, we identified that metformin could reverse FAM98A-mediated 5-FU resistance in CRC cells. CONCLUSIONS: Our results for the first time indicate that FAM98A plays a critical role in promoting CRC progression, which provides a novel target for clinical drug resistance of colorectal cancer. And metformin may sensitize 5-FU in the treatment of colorectal cancer.

Yes associated protein 1 promotes resistance to 5-fluorouracil in gastric cancer by regulating GLUT3-dependent glycometabolism reprogramming of tumor-associated macrophages.

The antimetabolite 5-fluorouracil (5-FU) is a widely used chemotherapy regimen for the treatment of gastric cancer (GC). However, resistance to 5-FU remains a major drawback in the clinical use. The treatments of anti-tumor chemo-agents recruit tumor associated macrophages (TAMs) which are highly implicated in the chemoresistance development, but the underlying molecular mechanism is unclear. Here, we demonstrate that YAP1 is overexpressed in resistant GC tissues compared to sensitive GC tissues. Further, IL-3 secreted by YAP1-overexpressed GC could skew macrophage polarization to M2-like phenotype and inducing GLUT3-depended glycolysis program. Meanwhile, polarized M2 macrophages enhance 5-FU resistance in tumor cells by secreting CCL8 and activating phosphorylation of JAK1/STAT3 signaling pathway.

Photo-Detachable Self-Cleaning Surfaces Inspired by Gecko Toepads.

Strong, reversible, and self-cleaning adhesion in the toe pads of geckos allow the lizards to climb on a variety of vertical and inverted surfaces, regardless of the surface conditions, whether hydrophobic or hydrophilic, smooth or tough, wet or dry, clean or dirty. Development of synthetic gecko-inspired surfaces has drawn a great attention over the past two decades. Despite many external-stimuli responsive mechanisms (i.e., thermal, electrical, magnetic) have been successfully demonstrated, smart adhesives controlled by light signals still substantially lag behind. Here, in this report, we integrate tetramethylpiperidinyloxyl (TEMPO)-doped polydopamine (PDA), namely, TDPDA, with PDMS micropillars using a template-assisted casting method, to achieve both improved adhesion and self-cleaning performances. To the best of our knowledge, this is the first report on PDA being used as a doping nanoparticle in bioinspired adhesive surfaces to achieve highly efficient self-cleaning controllable by light signals. Notably, the adhesion of the 5% TDPDA-PDMS sample is ∼688.75% higher than that of the pure PDMS at the individual pillar level, which helps to explain the highly efficient self-cleaning mechanism. The sample surfaces (named TDPDA-PDMS) can efficiently absorb 808 nm wavelength of light and heat up from 25 °C to 80.9 °C in 3 min with NIR irradiation. The temperature rise causes significant reduction of adhesion, which results in outstanding self-cleaning rate of up to 55.8% within five steps. The exploration of the photoenabled switching mechanism with outstanding sensitivity may bring the biomimetic smart surfaces into a new dimension, rendering varied applications, e.g., in miniaturized climbing robot, artificial intelligence programmable manipulation/assembly/filtration, active self-cleaning solar panels, including high output sensors and devices in many engineering and biomedical frontiers.

PEDV infection in neonatal piglets through the nasal cavity is mediated by subepithelial CD3+ T cells.

Porcine epidemic diarrhea virus (PEDV) primarily infects neonatal piglets causing catastrophic effects on the global pig farming industry. PEDV infects piglets through the nasal cavity, a process in which dendritic cells (DCs) play an important role. However, neonatal piglets have fewer nasal DCs. This study found that subepithelial CD3+ T cells mediated PEDV invasion through the nasal cavity in neonatal piglets. PEDV could replicate in the nasal epithelial cells (NECs) isolated from the nasal cavity of neonatal piglets. Infection of NECs with PEDV could induce antiviral and inflammatory cytokines at the late stage. The infected NECs mediated transfer of virus to CD3+ T cells distributed in the subepithelial of the nasal cavity via cell-to-cell contact. The infected CD3+ T cells could migrate to the intestine via blood circulation, causing intestinal infection in neonatal piglets. Thus, the findings of this study indicate the importance of CD3+T cells in the dissemination of PEDV from the nasal cavity to the intestinal mucosa in neonatal piglets.

Low-temperature plasma polymerized fluorocarbon coating promotes surface charge dissipation in polystyrene.

Polystyrene (PS) is a common insulating material in pulsed power devices, which has excellent and reliable insulation properties. However, the charge accumulation on the insulator surface seriously threatens its surface insulation property. Surface modification has been verified as an effective way for inhibiting surface charge accumulation. In this paper, plasma polymerized fluorocarbon (PPFC) coating was prepared by low-temperature plasma polymerization in the mixture of methyl-methacrylate and dodecafluoroheptyl-methacrylate (DFHMA). Compared with the untreated PS, the surface charge dissipation rate of PPFC coating is increased by more than 6 times. The introduction of DFHMA makes the coating have no obvious ageing effect after the storage, and has good reusability after the surface flashover. This work provides a new method for modification of polymer dielectrics and a novel way for the preparation of high-charge-dissipation polymers in other related fields.

Sapphire derived fiber based Fabry-Perot interferometer with an etched micro air cavity for strain measurement at high temperatures.

A sapphire derived fiber (SDF) based Fabry-Perot interferometer (FPI) with an etched micro air cavity for strain measurement at high temperatures is proposed. The FPI is formed by splicing a section of SDF between an etched single mode fiber (ESMF) and a capillary. The SDF's core containing 51.3mol.% aluminum provides the intrinsic Fabry-Perot interferometer cavity with an enhanced fringe contrast through the narrow etched air cavity reflector. Because the different Poisson effects of the cladding and the core have different deformations under axial stress, the transverse strain imposed from the cladding to the core was introduced to the additive model. The strain sensitivity of the FPI was theoretically analyzed and experimentally demonstrated at room temperature. A thermal annealing process was performed to study the stability in high temperatures and to release the residual stress during the sensor's fabrication. The strain calibration was carried out subsequently from 20℃ to 1000℃. Benefiting from the doping in the core and diffusion in the cladding of the high temperature resistant material Al2O3, the proposed sensor was proved to operate well in 950℃ and was also characteristized by a sensitivity of 1.19 pm/µÉ› and 1.06 pm/µÉ› in the process of loading and unloading strain separately.

Flattened fiber-optic ATR sensor enhanced by silver nanoparticles for glucose measurement.

This paper proposes a novel fiber attenuated total reflection (ATR) sensor with silver nanoparticles (AgNPs) on the flattened structure based on mid-infrared spectroscopy for detecting low concentration of glucose with high precision. The flattened structure was designed to add the effective optical path length to improve the sensitivity. AgNPs were then deposited on the surface of the flattened area of the fiber via chemical silver mirror reaction for further improving the sensitivity by enhancing the infrared absorption. Combining the AgNPs modified flattened fiber ATR sensor with a CO2 laser showed a strong mid-infrared glucose absorption, with an enhancement factor of 4.30. The glucose concentration could be obtained by a five-variable partial least-squares model with a root-mean-square error of 4.42 mg/dL, which satisfies clinical requirements. Moreover, the fiber-based technique provides a pretty good method to fabricate miniaturized ATR sensors that are suitable to be integrated into a microfluidic chip for continuous glucose monitoring with high sensitivity.

Crystallization-sapphire-derived-fiber-based Fabry-Perot interferometer for refractive index and high-temperature measurement.

A crystallization-sapphire-derived-fiber (CSDF)-based Fabry-Perot interferometer (FPI) for refractive index (RI) and high-temperature measurement is proposed and demonstrated. The FPI is formed by splicing sapphire-derived fiber (SDF) to the end face of a well-cleaved single-mode fiber (SMF). CSDF is generated hundreds of micrometers away from the fusion joint resulting from arc discharge and then cuts the SDF to the edge of the CSDF. The FPI consists of two cavities, one of which is formed by CSDF, and the other is SDF, between the SMF and CSDF. The fringe contrast of the reflection spectrum varying with the RI changes of the external environment is used for RI sensing, while the wavelength shifting is for the ambient temperature sensing. In the experiment, the refractive index and temperature sensitivities are about 233.8 dB/RIU in the RI range of 1.333-1.363 and 13.571 pm/°C in the temperature range of 20°C-1000°C.

Fabrication and characterization of poly(lactic acid-trimethylene carbonate) based biodegradable composite films.

Two biobased composite films have been prepared with poly (lactic acid-trimethylene carbonate), polylactic acid and Laponite by solvent evaporation method. The 1H NMR and FTIR spectrums illustrate that P (LA-TMC) polymer is successfully synthesized and designed composite films are produced. Morphometric analyses demonstrate that the roughnesses of the film's surface and cross-section are on the increase with higher PLA and Laponite content. Mechanical performances reveal that the rise in tensile strength and modulus while maintaining excellent elongation at break is mainly due to the increase in the content of polylactic acid and Laponite. By utilizing the nano effect of Laponite, the maximum tensile strength of the composite film reaches 34.59 MPa. Thermal property results illustrate that the Tg and initial decomposition temperature are on the growth with the increase of PLA content. However, it is not significant on the effect of Laponite on the initial decomposition temperature. The water vapor permeability measurements prove that the barrier property of P(LA-TMC)/PLA/Laponite composite film is on the ascent with the Laponite addition. Hydrolytic degradation tests indicate that PLA and Laponite play avital part in accelerating the degradation rate of composite films and alkaline media is superior acidic and neutral conditions.

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment.

The Vth stability and gate reliability of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al2O3 with the alternating O2 plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O2 plasma treatment demonstrated remarkable advantages in higher Vth stability under high-temperature and long-term gate bias stress.

Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing.

A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N2 plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PELAD amorphous AlN, C-V results indicated a significantly lower interface density of states (Dit) in a MIS C-V characterization, which could be attributed to the polarization effect induced by the AlN crystal from the X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) characterizations. The proposed method could reduce the subthreshold swing, and the Al2O3/AlN/GaN MIS-HEMTs were significantly enhanced with ~38% lower on-resistance at Vg = 10 V. What is more, in situ NPA provides a more stable threshold voltage (Vth) after a long gate stress time, and ΔVth is inhibited by about 40 mV under Vg,stress = 10 V for 1000 s, showing great potential for improving Al2O3/AlN/GaN MIS-HEMT gate reliability.

Superior Surface-Insulated Polymers with Low Leakage Current Enabled by Tailored Coatings Deposited with Colliding Plasma Jets.

Insufficient surface insulation margin is the primary challenge for a 10 kV plus high-voltage semiconductor module. Surface charge accumulation and electric field distortion are the leading causes of surface insulation failure. Power modules restrict leakage loss, so only insulation dielectrics with low surface conductivity can be used. However, low conductivity, accumulated charge dissipation, and distorted electric field optimization have always been contradictory. A potential barrier increase and electron affinity decrease are both less coupled approaches with conductivity, which may have the potential for reducing surface charge accumulation. Here, surface charge accumulation inhibition and local electric field optimization were synchronously realized by tailored coating deposition with colliding plasma jets. This novelty approach leads to a finer interfacial modification of the triple junction and its nearby interfaces. The high-barrier and low-affinity coatings deposited by colliding plasma jets suppress charge injection (electrode-polymer interface) and promote charge dissipation (gas-polymer interface), respectively. At the same time, the small-area semiconductor deposited at the triple junction relieves the distortion of the electric field. In the end, while maintaining a low leakage current, the surface flashover voltages of polytetrafluoroethylene, polyimide, and epoxy packaging polymers are significantly increased by 69.7, 43.2, and 39.6%, respectively. Notably, the normalized leakage loss is less than 3/10,000 of the commercially available SiC module, which vastly differs from the surface insulation improvement strategy that blindly increases surface conductivity. This tailored coating modification strategy provides a new idea for dielectric research. It has reasonable practicability due to fast, cheap, and environmentally friendly colliding plasma jets.

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication.

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth.

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.

A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification step with O2 plasma, following by an oxide removal step with BCl3 plasma. With PESR process, the AlGaN surface morphology after p-GaN etching was comparable to the as-epitaxial level by AFM characterization, and the AlGaN lattice crystallization was also recovered which was measured in a confocal Raman system. The electrical measurement further confirmed the significant improvement of AlGaN surface quality, with one-order of magnitude lower surface leakage in a metal-semiconductor (MS) Schottky-diode and 6 times lower interface density of states (Dit) in a MIS C-V characterization. The XPS analysis of Al2O3/AlGaN showed that the p-GaN etching induced F-byproduct and Ga-oxide was well removed and suppressed by PESR process. Finally, the developed PESR process was successfully integrated in p-GaN gate HEMTs fabrication, and the device performance was significantly enhanced with ~20% lower of on-resistance and ~25% less of current collapse at Vds,Q bias of 40 V, showing great potential of leverage p-GaN gate HEMTs reliability.

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved the Al2O3/AlGaN interface with Dit of ~2 × 1012 cm-2 eV-1, and thus effectively reduced the current collapse and the dynamic Ron degradation. The devices showed good electrical performance with low Vth hysteresis and peak trans-conductance of 107 mS/mm. Additionally, when the devices operated under 25 °C pulse-mode stress measurement with VDS,Q = 40 V (period of 1 ms, pulse width of 1 µs), the dynamic Ron increase of ~14.1% was achieved.