Artificial intelligence assisted ultrasound for the non-invasive prediction of axillary lymph node metastasis in breast cancer.

PURPOSE: A practical noninvasive method is needed to identify lymph node (LN) status in breast cancer patients diagnosed with a suspicious axillary lymph node (ALN) at ultrasound but a negative clinical physical examination. To predict ALN metastasis effectively and noninvasively, we developed an artificial intelligence-assisted ultrasound system and validated it in a retrospective study. METHODS: A total of 266 patients treated with sentinel LN biopsy and ALN dissection at Peking Union Medical College & Hospital(PUMCH) between the year 2017 and 2019 were assigned to training, validation and test sets (8:1:1). A deep learning model architecture named DeepLabV3 + was used together with ResNet-101 as the backbone network to create an ultrasound image segmentation diagnosis model. Subsequently, the segmented images are classified by a Convolutional Neural Network to predict ALN metastasis. RESULTS: The area under the receiver operating characteristic curve of the model for identifying metastasis was 0.799 (95% CI: 0.514-1.000), with good end-to-end classification accuracy of 0.889 (95% CI: 0.741-1.000). Moreover, the specificity and positive predictive value of this model was 100%, providing high accuracy for clinical diagnosis. CONCLUSION: This model can be a direct and reliable tool for the evaluation of individual LN status. Our study focuses on predicting ALN metastasis by radiomic analysis, which can be used to guide further treatment planning in breast cancer.

Farnesyl diphosphate synthase exacerbates nonalcoholic steatohepatitis via the activation of AHR-CD36 axis.

Nonalcoholic steatohepatitis (NASH) has become a major concern that threatens human health worldwide. The underlying pathogenesis was crucial but remained poorly understood. Here, we found that the expression of hepatic farnesyl diphosphate synthase (FDPS) was increased in mice and patients with NASH. Elevated FDPS levels were positively correlated with NASH severity. Overexpression of FDPS in mice provoked increased lipid accumulation, inflammation, and fibrosis, while hepatic FDPS deficiency protected mice from NASH progression. Importantly, pharmacological inhibition of FDPS with clinically used alendronate remarkably attenuated NASH-associated phenotypes in mice. Mechanistically, we demonstrated that FDPS increased its downstream product farnesyl pyrophosphate levels, which could function as an aryl hydrocarbon receptor (AHR) agonist to upregulate the expression of fatty acid translocase CD36, to accelerate the development of NASH. Collectively, these findings suggest that FDPS exacerbates NASH via AHR-CD36 axis and identify FDPS as a promising target for NASH therapy.

Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC.

This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced-atomic-layer-deposition on an n-type 4H-SiC substrate. The AlN/4H-SiC MIS structure is subjected to gamma-ray irradiation with total doses of 0, 300, and 600 krad(Si). Physical, chemical, and electrical methods were employed to study the variations in surface morphology, charge transport, and interfacial trapping characteristics induced by irradiation. After 300 krad(Si) irradiation, the as-deposited and annealed samples exhibit their highest root mean square values of 0.917 nm and 1.190 nm, respectively, which is attributed to N vacancy defects induced by irradiation. Under irradiation, the flatband voltage (Vfb) of the as-deposited sample shifts from 2.24 to 0.78 V, while the annealed sample shifts from 1.18 to 2.16 V. X-ray photoelectron spectrum analysis reveals the decomposition of O-related defects in the as-deposited AlN and the formation of Al(NOx)ycompounds in the annealed sample. Furthermore, the space-charge-limits-conduction (SCLC) in the as-deposited sample is enhanced after radiation, while the barrier height of the annealed sample decreases from 1.12 to 0.84 eV, accompanied by the occurrence of the SCLC. The physical mechanism of the degradation of electrical performance in irradiated devices is the introduction of defects like N vacancies and O-related defects like Al(NOx)y. These findings provide valuable insights for SiC power devices in space applications.

Dual-Mode Solidly Mounted Resonator-Based Sensor for Temperature and Humidity Detection and Discrimination.

Sensors based on solidly mounted resonators (SMRs) exhibit a good set of properties, such as high sensitivity, fast response, low resolution limit and low production cost, which makes them an appealing technology for sensing applications. However, they can suffer from cross-sensitivity issues, as their response can be altered by undesirable ambient factors, such as temperature and humidity variations. In this work we propose a method to discriminate humidity variations from the general frequency response using an SMR specifically manufactured to operate in a dual-mode (displaying two close resonances). The two modes behave similarly towards humidity changes (-1.94 kHZ/(%RH)) for resonance one and -1.62 kHZ/(%RH) for resonance two), whereas their performance under temperature changes is significantly different, displaying 2.64 kHZ/°C for resonance one and 34.21 kHZ/°C for resonance two. This allows for the decoupling process to be carried out in a straightforward manner. Frequency response is tracked under different humidity conditions, in the -20 °C to room temperature region, proving that this behavior is reproducible in any given environment.

Aluminum Nitride Thin Film Piezoelectric Pressure Sensor for Respiratory Rate Detection.

In this study, we propose a low-cost piezoelectric flexible pressure sensor fabricated on Kapton® (Kapton™ Dupont) substrate by using aluminum nitride (AlN) thin film, designed for the monitoring of the respiration rate for a fast detection of respiratory anomalies. The device was characterized in the range of 15-30 breaths per minute (bpm), to simulate moderate difficult breathing, borderline normal breathing, and normal spontaneous breathing. These three breathing typologies were artificially reproduced by setting the expiratory to inspiratory ratios (E:I) at 1:1, 2:1, 3:1. The prototype was able to accurately recognize the breath states with a low response time (~35 ms), excellent linearity (R2 = 0.997) and low hysteresis. The piezoelectric device was also characterized by placing it in an activated carbon filter mask to evaluate the pressure generated by exhaled air through breathing acts. The results indicate suitability also for the monitoring of very weak breath, exhibiting good linearity, accuracy, and reproducibility, in very low breath pressures, ranging from 0.09 to 0.16 kPa. These preliminary results are very promising for the future development of smart wearable devices able to monitor different patients breathing patterns, also related to breathing diseases, providing a suitable real-time diagnosis in a non-invasive and fast way.

Structural and Immunological Features of PR-10 Allergens: Focusing on the Major Alder Pollen Allergen Aln g 1.

Today, allergies have become a serious problem. PR-10 proteins are clinically relevant allergens that have the ability to bind hydrophobic ligands, which can significantly increase their allergenicity potential. It has been recently shown that not only the birch pollen allergen Bet v 1 but also the alder pollen allergen Aln g 1, might act as a true sensitizer of the immune system. The current investigation is aimed at the further study of the allergenic and structural features of Aln g 1. By using qPCR, we showed that Aln g 1 was able to upregulate alarmins in epithelial cells, playing an important role in sensitization. With the use of CD-spectroscopy and ELISA assays with the sera of allergic patients, we demonstrated that Aln g 1 did not completely restore its structure after thermal denaturation, which led to a decrease in its IgE-binding capacity. Using site-directed mutagenesis, we revealed that the replacement of two residues (Asp27 and Leu30) in the structure of Aln g 1 led to a decrease in its ability to bind to both IgE from sera of allergic patients and lipid ligands. The obtained data open a prospect for the development of hypoallergenic variants of the major alder allergen Aln g 1 for allergen-specific immunotherapy.

First-Principles Investigation on the Tunable Electronic Structures and Photocatalytic Properties of AlN/Sc2CF2 and GaN/Sc2CF2 Heterostructures.

Heterostructure catalysts are highly anticipated in the field of photocatalytic water splitting. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are proposed in this work, and the electronic structures were revealed with the first-principles method to explore their photocatalytic properties for water splitting. The results found that the thermodynamically stable AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are indirect semiconductors with reduced band gaps of 1.75 eV and 1.84 eV, respectively. These two heterostructures have been confirmed to have type-Ⅰ band alignments, with both VBM and CBM contributed to by the Sc2CF2 layer. AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures exhibit the potential for photocatalytic water splitting as their VBM and CBM stride over the redox potential of water. Gibbs free energy changes in HER occurring on AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are as low as -0.31 eV and -0.59 eV, respectively. The Gibbs free energy change in HER on the AlN (GaN) layer is much lower than that on the Sc2CF2 surface, owing to the stronger adsorption of H on AlN (GaN). The AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures possess significant improvements in absorption range and intensity compared to monolayered AlN, GaN, and Sc2CF2. In addition, the band gaps, edge positions, and absorption properties of AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures can be effectively tuned with strains. All the results indicate that AlN/Sc2CF2 and GaN/Sc2CF2 heterostructures are suitable catalysts for photocatalytic water splitting.

Automated Breast Ultrasound (ABUS)-based radiomics nomogram: an individualized tool for predicting axillary lymph node tumor burden in patients with early breast cancer.

OBJECTIVES: Preoperative evaluation of axillary lymph node (ALN) status is an essential part of deciding the appropriate treatment. According to ACOSOG Z0011 trials, the new goal of the ALN status evaluation is tumor burden (low burden, < 3 positive ALNs; high burden, ≥ 3 positive ALNs), instead of metastasis or non-metastasis. We aimed to develop a radiomics nomogram integrating clinicopathologic features, ABUS imaging features and radiomics features from ABUS for predicting ALN tumor burden in early breast cancer. METHODS: A total of 310 patients with breast cancer were enrolled. Radiomics score was generated from the ABUS images. Multivariate logistic regression analysis was used to develop the predicting model, we incorporated the radiomics score, ABUS imaging features and clinicopathologic features, and this was presented with a radiomics nomogram. Besides, we separately constructed an ABUS model to analyze the performance of ABUS imaging features in predicting ALN tumor burden. The performance of the models was assessed through discrimination, calibration curve, and decision curve. RESULTS: The radiomics score, which consisted of 13 selected features, showed moderate discriminative ability (AUC 0.794 and 0.789 in the training and test sets). The ABUS model, comprising diameter, hyperechoic halo, and retraction phenomenon, showed moderate predictive ability (AUC 0.772 and 0.736 in the training and test sets). The ABUS radiomics nomogram, integrating radiomics score with retraction phenomenon and US-reported ALN status, showed an accurate agreement between ALN tumor burden and pathological verification (AUC 0.876 and 0.851 in the training and test sets). The decision curves showed that ABUS radiomics nomogram was clinically useful and more excellent than US-reported ALN status by experienced radiologists. CONCLUSIONS: The ABUS radiomics nomogram, with non-invasive, individualized and precise assessment, may assist clinicians to determine the optimal treatment strategy and avoid overtreatment.

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus SixNy.

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4-0.65 range. The characteristics of these porous layers were compared to those obtained with a SixNynanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a SixNynanomask were compared.

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires.

We study the molecular beam epitaxy of AlN nanowires between 950 °C and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al2O3. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modeling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length maximizes at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al2O3substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy doping of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiNxor AlOxpassivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require anex situsurface passivation.

Acquisition of grammatical aspect by Mandarin-speaking preschool children with autism spectrum disorder.

BACKGROUND: Mandarin-speaking children with autism spectrum disorder (ASD) have difficulties producing aspect markers. The difficulties were explained in terms of pragmatic deficits since these children demonstrated strength in the comprehension of aspect markers using the Intermodal Preferential Looking (IPL) task. AIMS: To verify whether this dissociation between production and comprehension could be replicated using another technique to the IPL, and if all children with ASD show difficulties in the production of aspect markers. METHODS & PROCEDURES: A total of 34 children with ASD without cognitive delay, half with language impairment (ALI; mean age = 61.25 months old) and half with normal language (ALN, mean age = 61.52 months old), as well as 17 age-matched typically developing (TD) children (mean age = 61.38 months old) participated in a sentence-picture-matching task and a priming picture-description task to investigate their comprehension and production of Mandarin aspect markers zai-, -le and -zhe. OUTCOMES & RESULTS: In the comprehension task, children in the ALN group performed similarly to their TD peers, but those in the ALI group were less accurate on zai- and -le than TD children; children in all groups received higher accuracy when zai- was combined with Activity rather than Accomplishment verbs, and those in the ALI group was also more accurate when -le occurred with Achievement verbs, in contrast to Activity verbs. In the production task, children in the ALI group produced fewer targets and more irrelevant sentences with zai- than their TD peers, and they tended to produce bare verbs for -le and -zhe than TD children; children in all groups tended to combine zai- with Activity verbs, and those in the ALN group also tended to combine -le with Achievement verbs. CONCLUSIONS & IMPLICATIONS: The comprehension and production of Mandarin aspect markers by children with ASD are linked to general language abilities, and interactions between lexical and grammatical aspect. Patterns of performance are similar to those of TD peers only for the subgroup with spared global language, while pragmatic deficits are pervasive throughout the spectrum. Therefore, training on formal language, with a specific emphasis on aspectual rather than pragmatic abilities, may be more effective at enhancing the production of aspect markers. WHAT THIS PAPER ADDS: What is already known on this subject Mandarin-speaking children with ASD have difficulties producing aspect markers but demonstrate strengths in aspectual comprehension via the IPL task. Therefore, it has been proposed that their 'specific' difficulties in aspectual production should be ascribed to their pragmatic deficits. However, pragmatic deficits are highly pervasive in children with ASD while only a subgroup of children with ASD who are impaired in language development (children with ALI) show difficulties in producing tense/aspect morphology. Pursuing this reasoning, pragmatic deficits might not be the critical factor impacting the performance of children with ASD in aspectual production. What this study adds Children with ASD were divided into one group with ALI and the other with normal language (ALN). Results of a sentence-picture-matching and a priming picture-description task illustrated that both groups preserved the comprehension of Mandarin aspect markers zai-, -le and -zhe. However, children with ALI performed worse than age-matched TD children, while children with ALN demonstrated similar performance to TD children in aspectual production. These findings, coupled with the fact that pragmatic challenges affect individuals throughout the spectrum, suggest that general language abilities rather than pragmatics better explain the performance of children with ASD on aspectual production. What are the potential or actual clinical implications of this work? Since general language abilities rather than pragmatic deficits of children with ASD determine their performance on the production of aspect markers, direct training on the use of aspect markers or more global language therapy could benefit children with ASD in the production of aspect markers.

Contribution of Ribbon-Structured SiO2 Films to AlN-Based and AlN/Diamond-Based Lamb Wave Resonators.

New designs based on S0 Lamb modes in AlN thin layer resonating structures coupled with the implementation of structural elements in SiO2, are theoretically analyzed by the Finite Element Method (FEM). This study compares the typical characteristics of different interdigital transducer (IDTs) configurations, involving either a continuous SiO2 cap layer, or structured SiO2 elements, showing their performance in the usual terms of electromechanical coupling coefficient (K2), phase velocity, and temperature coefficient of frequency (TCF), by varying structural parameters and boundary conditions. This paper shows how to reach temperature-compensated, high-performance resonator structures based on ribbon-structured SiO2 capping. The addition of a thin diamond layer can also improve the velocity and electromechanical coupling coefficient, while keeping zero TCF and increasing the solidity of the membranes. Beyond the increase in performance allowed by such resonator configurations, their inherent structure shows additional benefits in terms of passivation, which makes them particularly relevant for sensing applications in stern environments.

Design and Fabrication of a Flexible Gravimetric Sensor Based on a Thin-Film Bulk Acoustic Wave Resonator.

Sensing systems are becoming less and less invasive. In this context, flexible materials offer new opportunities that are impossible to achieve with bulky and rigid chips. Standard silicon sensors cannot be adapted to curved shapes and are susceptible to big deformations, thus discouraging their use in wearable applications. Another step forward toward minimising the impacts of the sensors can be to avoid the use of cables and connectors by exploiting wireless transmissions at ultra-high frequencies (UHFs). Thin-film bulk acoustic wave resonators (FBARs) represent the most promising choice among all of the piezoelectric microelectromechanical system (MEMS) resonators for the climbing of radio frequencies. Accordingly, the fabrication of FBARs on flexible and wearable substrates represents a strategic step toward obtaining a new generation of highly sensitive wireless sensors. In this work, we propose the design and fabrication of a flexible gravimetric sensor based on an FBAR on a polymeric substrate. The resonator presents one of the highest electromechanical coupling factors in the category of flexible AlN-based FBARs, equal to 6%. Moreover, thanks to the polymeric support layer, the presence of membranes can be avoided, which leads to a faster and cheaper fabrication process and higher robustness of the structure. The mass sensitivity of the device was evaluated, obtaining a promising value of 23.31 ppm/pg. We strongly believe that these results can pave the way to a new class of wearable MEMS sensors that exploit ultra-high-frequency (UHF) transmissions.

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates.

Micro- and nanostructures in vapor-phase-grown AlN on face-to-face annealed sputtered AlN (FFA Sp-AlN) templates formed on nanopatterned sapphire substrates (NPSS) were comprehensively analyzed using transmission electron microscopy. The comparison between metal-organic vapor-phase epitaxy-grown AlN/FFA Sp-AlN/hole-type NPSS (Sample MOH) and hydride vapor-phase epitaxy-grown AlN/FFA Sp-AlN/cone-type NPSS (Sample HVC) showed apparent differences in the morphology of dislocation propagation, presence of voids, shape of polarity inversion boundaries, and crystal structure on the slope region of NPSS. Notably, cross-sectional and plan-view observations revealed that the quality of FFA Sp-AlN significantly affects the threading dislocation density in the vapor-phase-grown layer. At the slope region of the AlN/NPSS interface, γ-AlON was observed in the MOH sample, while highly misaligned AlN grains were observed in the HVC sample. These characteristic crystal structures affect the occurrence of dislocations via different mechanisms in each sample. This study provides practical information for strategically controlling the micro- and nanostructures formed in AlN/NPSS structures for high-performance AlGaN-based deep-ultraviolet emitters. Supplementary Information: The online version contains supplementary material available at 10.1007/s11664-023-10348-3.

Insight into the Molecule Impact of Critical-Sized UHMWPE-ALN Wear Particles on Cells by the Alginate-Encapsulated Cell Reactor.

Wear particles of ultra-high molecular weight polyethylene (UHMWPE) are inevitable during service as joint prosthesis, and particles ≤ 10 µm with critical size could cause serious osteolysis and aseptic loosening of joint prosthesis. The aim of this study is to adopt the alginate-encapsulated cell reactor to investigate the molecular impact of critical-sized wear particles of UHMWPE loaded with alendronate sodium (UHMWPE-ALN) on cells. Results showed that compared with UHMWPE wear particles, UHMWPE-ALN wear particles inhibited the proliferation of macrophages significantly after being co-cultured for 1, 4, 7, and 14 d. Furthermore, the released ALN promoted early apoptosis, suppressed the secretion of TNF-α and IL-6 of macrophages, and down-regulated relative gene expressions of TNF-α, IL-6, and IL-1ß and RANK. In addition, compared with UHMWPE wear particles, UHMWPE-ALN wear particles promoted the ALP activity of osteoblasts, down-regulated the gene expression of RANKL, and up-regulated gene expression of osteoprotegerin. There were mainly two approaches of the effects of critical-sized UHMWPE-ALN wear particles on cells, one of which was cytology and the other was cytokine signal pathway. The former mainly affected the proliferation and activity of macrophages and osteoblasts. The latter would inhibit osteoclasts via cytokine and RANKL/RANK signal pathway. Thus, UHMWPE-ALN had the potential application in clinics to treat osteolysis induced by wear particles.

Effect, sensitivity, specificity and accuracy of ultrasonic assessment of axillary lymph node-negative breast cancer.

Objective: To investigate the diagnostic value of ultrasound for patients with axillary lymph node-negative breast cancer (ALNNBC). Methods: A retrospective analysis was performed on the clinical data of 204 breast cancer patients who were admitted by Quanzhou First Hospital Affiliated to Fujian Medical University between October 2020 and May 2022. According to the results of axillary lymph node (ALN) examination, the patients were assigned to a positive group(n=102) and a negative group(n=102). All patients underwent diagnosis with color Doppler ultrasound, with pathological diagnosis as the "gold standard" to determine the sensitivity and specificity of ultrasonic diagnosis. A receiver operating characteristic(ROC) curve was established to analyze the efficiency of ultrasonic diagnosis and compare the ultrasonographic features and flow grades between the two groups. Results: Differences were statistically significant between the two groups in ultrasonographic features of lesions(negative vs positive, all p<0.05), including morphological irregularity(59.8% vs 85.3%), spiky margins(19.6% vs 63.7%), posterior echo attenuation(19.6% vs 44.1%) and microcalcification(40.2% vs 55.89%). The negative group had a lower proportion of patients with grade 2-3 ultrasound blood flow when compared with the positive group(32.4% vs 56.86%), and the difference was statistically significant(p<0.05). Ultrasonic diagnosis of ALNNBC had a sensitivity of 88.24%(90/102), a specificity of 92.16%(94/102), a coincidence rate of 90.20% (184/204), a 95% CI of 0.845-0.928, and an AUC of 0.879. Conclusions: Ultrasonic diagnosis of ALNNBC is relatively efficient as ultrasonographic features and ultrasound blood flow signals can provide a scientific basis for the diagnosis of ALNNBC.

Second-Order Nonlinear Optical Responses of AlN Two-Dimensional Monolayer: A Real-Time First-Principles Study.

Two-dimensional materials have recently attracted attention due to their unique physical properties and promising applications. This work reports the electronic, linear and second-order nonlinear optical properties of aluminum nitride (AlN) monolayer by using a real-time first-principles approach based on Green's function theory. In this approach, quasi-particle corrections, crystal local field effects, and excitonic contributions are considered for investigating the linear and nonlinear responses. As a two-dimensional material with a wide direct gap of around 6.45 eV, the AlN monolayer exhibits strong resonances of absorption and second-harmonic spectra in the ultraviolet range. In the transparent spectral range from blue to deep ultraviolet (2.8-5.3 eV), strong peaks of second-order nonlinear susceptibility appear in the AlN monolayer with a large peak value of around 430 pm/V, which is one or two orders-of-magnitude larger than the nonlinear materials used in the ultraviolet range. The results presented in this work will find important applications for nonlinear imaging, spectroscopy, and nonlinear nanophotonics in the ultraviolet range.

Design and 3D FEM Analysis of a Flexible Piezoelectric Micromechanical Ultrasonic Transducer Based on Sc-Doped AlN Film.

In this paper, a flexible piezoelectric micromachined ultrasonic transducer (PMUT) based on Scandium (Sc)-doped Aluminum Nitride (AlN) film was designed and modeled by the three-dimensional finite element method (3D-FEM). The resonant frequency of 218.1 kHz was reported. It was noticeable that a high effective electromechanical coupling coefficient (k2eff) of 1.45% was obtained when a combination of a flexible PI and a thin Si layer was used as the PMUT supporting structure layer. Compared with a pure Si supporting layer counterpart, the coupling coefficient had been improved by 110.68%. Additionally, the increase of Sc doping concentration in AlN film further enhanced the device electromechanical coupling coefficient and resulted in an improvement for transmitting/receiving sensitivity of the proposed flexible PMUT. When the doping concentration of Sc reached 30%, the emission sensitivity was as large as 1.721 µm/V, which was 2.86 times greater than that of conventional AlN film-based PMUT. The receiving sensitivity was found to be 2.11 V/KPa, which was as high as 1.23 times the performance of an undoped device. Furthermore, the bending simulation result showed that the proposed flexible PMUT device can maintain a good mechanical stability when the bending radius is greater than 1.5 mm. The simulation of sound field characteristics demonstrated that the flexible PMUT based on AlScN could receive stable sound pressure signals under the bending radius of 1.5 cm.

GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature.

GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire substrate using MBE technology. Meanwhile, based on this device structure, the band positions and carrier distributions of a single quantum well are also calculated. At room temperature, the optical response of the device is 58.6 µA/W with a bias voltage of 0.5 V, and the linearity between the optical response and the laser power is R2 = 0.99931. This excellent detection performance can promote the research progress of GaN-based quantum well infrared detectors in the short-wave infrared field.

Surface Acoustic Wave (SAW) Sensors: Physics, Materials, and Applications.

Surface acoustic waves (SAWs) are the guided waves that propagate along the top surface of a material with wave vectors orthogonal to the normal direction to the surface. Based on these waves, SAW sensors are conceptualized by employing piezoelectric crystals where the guided elastodynamic waves are generated through an electromechanical coupling. Electromechanical coupling in both active and passive modes is achieved by integrating interdigitated electrode transducers (IDT) with the piezoelectric crystals. Innovative meta-designs of the periodic IDTs define the functionality and application of SAW sensors. This review article presents the physics of guided surface acoustic waves and the piezoelectric materials used for designing SAW sensors. Then, how the piezoelectric materials and cuts could alter the functionality of the sensors is explained. The article summarizes a few key configurations of the electrodes and respective guidelines for generating different guided wave patterns such that new applications can be foreseen. Finally, the article explores the applications of SAW sensors and their progress in the fields of biomedical, microfluidics, chemical, and mechano-biological applications along with their crucial roles and potential plans for improvements in the long-term future in the field of science and technology.