Toward large-scale, ordered and tunable Majorana-zero-modes lattice on iron-based superconductors.

Majorana excitations are the quasiparticle analog of Majorana fermions in solid materials. Typical examples are the Majorana zero modes (MZMs) and the dispersing Majorana modes. When probed by scanning tunneling spectroscopy, the former manifest as a pronounced conductance peak locating precisely at zero-energy, while the latter behaves as constant or slowly varying density of states. The MZMs obey non-abelian statistics and are believed to be building blocks for topological quantum computing, which is highly immune to the environmental noise. Existing MZM platforms include hybrid structures such as topological insulator, semiconducting nanowire or 1D atomic chains on top of a conventional superconductor, and single materials such as the iron-based superconductors (IBSs) and 4Hb-TaS2. Very recently, ordered and tunable MZM lattice has also been realized in IBS LiFeAs, providing a scalable and applicable platform for future topological quantum computation. In this review, we present an overview of the recent local probe studies on MZMs. Classified by the material platforms, we start with the MZMs in the iron-chalcogenide superconductors where FeTe0.55Se0.45and (Li0.84Fe0.16)OHFeSe will be discussed. We then review the Majorana research in the iron-pnictide superconductors as well as other platforms beyond the IBSs. We further review recent works on ordered and tunable MZM lattice, showing that strain is a feasible tool to tune the topological superconductivity. Finally, we give our summary and perspective on future Majorana research.

Effect of Surface Morphology and Magnetic Impurities on the Electronic Structure in Cobalt-Doped BaFe2As2 Superconductors.

Combined scanning tunneling microscopy, spectroscopy, and local barrier height (LBH) studies show that low-temperature-cleaved optimally doped Ba(Fe1-xCox)2As2 crystals with x = 0.06, with Tc = 22 K, have complicated morphologies. Although the cleavage surface and hence the morphologies are variable, the superconducting gap maps show the same gap widths and nanometer size inhomogeneities irrelevant to the morphology. Based on the spectroscopy and LBH maps, the bright patches and dark stripes in the morphologies are identified as Ba- and As-dominated surface terminations, respectively. Magnetic impurities, possibly due to Co or Fe atoms, are believed to create local in-gap state and, in addition, suppress the superconducting coherence peaks. This study will clarify the confusion on the cleavage surface terminations of the Fe-based superconductors and its relation with the electronic structures.

Deciphering Alloy Composition in Superconducting Single-Layer FeSe1-xSx on SrTiO3(001) Substrates by Machine Learning of STM/S Data.

Scanning tunneling microscopy (STM) is a powerful technique for imaging atomic structure and inferring information on local elemental composition, chemical bonding, and electronic excitations. However, a plain visual analysis of STM images can be challenging for such determination in multicomponent alloys, particularly beyond the diluted limit due to chemical disorder and electronic inhomogeneity. One viable solution is to use machine learning to analyze STM data and identify hidden patterns and correlations. Here, we apply this approach to determine the Se/S concentration in superconducting single-layer FeSe1-xSx alloys epitaxially grown on SrTiO3(001) substrates via molecular beam epitaxy. First, the K-means clustering method is applied to identify defect-related dI/dV tunneling spectra taken by current imaging tunneling spectroscopy. Then, the Se/S ratio is calculated by analyzing the remaining spectra based on the singular value decomposition method. Such analysis provides an efficient and reliable determination of alloy composition and further reveals the correlations of nanoscale chemical inhomogeneity to superconductivity in single-layer iron chalcogenide films.

Atomically Resolved Edge States on a Layered Ferroelectric Oxide.

The emerging surface/edge electronic phases driven by broken symmetry effects have attracted great attention in low-dimensional electronic systems. However, experimental proof on their existence in ferroelectric oxides at the atomic scale is still missing. In this work, metallic surface states are observed on layered Bi2WO6 by scanning tunneling microscopy/spectroscopy. Differential conductance is remarkably enhanced near the step edge compared with that on the terrace, forming a one-dimensional edge state. Density functional theory calculations verify that symmetry breaking at the surface determines the electronic structures and O 2p orbitals contribute the most to the density of states around the Fermi level. Our discovery provides a new strategy toward the hidden phases on other correlated oxide surfaces.

Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy.

Electric field control of charge carrier density provides a key in situ technology to continuously tune the ground states and map out the phase diagram of correlated electron systems in one device. This technique is highly expected to be combined with the modern state-of-the art spectroscopic probes, such as angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy (STM/S), to efficiently address these states and the underlying physics. However, it is extremely difficult and not successful so far, mainly because the fabrication process of such devices makes them prohibitive for surface probes. Here, by using a solid Li-ion conductor (SIC) as gate dielectric, we have successfully developed gate-tunable STM/S and visualized the superconductor-insulator transition (SIT) in a thin flake of single crystal (Li, Fe)OHFeSe at the nanoscale. The gate-controlled Li-ion injection first enhances the superconductivity and then drives the flake into an inhomogeneous insulating state, where superconductivity is totally suppressed. This process can be reversed by applying an opposite gate voltage. Importantly, the atomically resolved images allow us to identify the critical role that the injected Li ions play in the tuning process. Our results not only provide clear evidence of the microscopic mechanism of the tunable superconductivity and SIT in the SIC-based (Li, Fe)OHFeSe devices, but also establish SIC-gating STM as a powerful tool for investigating the complicated phase diagram of correlated electron system spectroscopically in a single sample with the field-effect approach.

Real-Space Imaging of Orbital Selectivity on SrTiO3(001) Surface.

Real-space access of the orbital degree of freedom in complex oxides is still challenging due to intricate electronic hybridization. Here, we report a direct observation of reproducible orbital-selective tunneling on a novel SrTiO3(001) surface by scanning tunneling microscopy. The electronic structures reversibly switch between two different sets of symmetries depending on the sample bias, which is accompanied by a remarkable change in energy-dependent spectroscopy data. Tunneling spectrum combined with density functional theory calculations elucidates that symmetry-breaking at the surface determines the crystal-splitting field of eg/t2g orbitals with a strong in-plane anisotropy so that electrons alternatingly fill eg and t2g orbitals during the imaging process with different biases. This surface superstructure provides a new strategy toward understanding orbital textures and orbital selectivity in complex oxides.

Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit.

The perfect switching between crystal phases with different electronic structure in III-V nanowires allows for the design of superstructures with quantum wells only a single atomic layer wide. However, it has only been indirectly inferred how the electronic structure will vary down to the smallest possible crystal segments. We use low-temperature scanning tunneling microscopy and spectroscopy to directly probe the electronic structure of Zinc blende (Zb) segments in Wurtzite (Wz) InAs nanowires with atomic-scale precision. We find that the major features in the band structure change abruptly down to a single atomic layer level. Distinct Zb electronic structure signatures are observed on both the conduction and valence band sides for the smallest possible Zb segment: a single InAs bilayer. We find evidence of confined states in the region of both single and double bilayer Zb segments indicative of the formation of crystal segment quantum wells due to the smaller band gap of Zb as compared to Wz. In contrast to the internal electronic structure of the nanowire, surface states located in the band gap were found to be only weakly influenced by the presence of the smallest Zb segments. Our findings directly demonstrate the feasibility of crystal phase switching for the ultimate limit of atomistic band structure engineering of quantum confined structures. Further, it indicates that band gap values obtained for the bulk are reasonable to use even for the smallest crystal segments. However, we also find that the suppression of surface and interface states could be necessary in the use of this effect for engineering of future electronic devices.

Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy.

Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer (ML) films, networks of inversion domain boundary (DB) defects are observed both in the top and bottom layers of BL MoSe2, and often they are seen spatially correlated such that one is on top of the other. There are also isolated ones in the bottom layer without companion in the top-layer and are detected by STM/S through quantum tunneling of the defect states through the barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML film reveals some common features as well as differences. Quantum confinement of the defect states is indicated. Point defects in BL MoSe2 are also observed by STM/S, where ionization of the donor defect by the tip-induced electric field is evidenced. These results are of great fundamental interests as well as practical relevance of devices made of MoSe2 ultrathin layers.