A novel SIK2 inhibitor SIC-19 exhibits synthetic lethality with PARP inhibitors in ovarian cancer.

PURPOSE: Ovarian cancer patients with HR proficiency (HRP) have had limited benefits from PARP inhibitor treatment, highlighting the need for improved therapeutic strategies. In this study, we developed a novel SIK2 inhibitor, SIC-19, and investigated its potential to enhance the sensitivity and expand the clinical utility of PARP inhibitors in ovarian cancer. METHODS: The SIK2 protein was modeled using a Molecular Operating Environment (MOE), and the most favorable model was selected based on a GBVI/WSA dG scoring function. The Chembridge Compound Library was screened, and the top 20 candidate compounds were tested for their interaction with SIK2 and downstream substrates, AKT-pS473 and MYLK-pS343. SIC-19 emerged as the most promising drug candidate and was further evaluated using multiple assays. RESULTS: SIC-19 exhibited selective and potent inhibition of SIK2, leading to its degradation through the ubiquitination pathway. The IC50 of SIC-19 correlated inversely with endogenous SIK2 expression in ovarian cancer cell lines. Treatment with SIC-19 significantly inhibited cancer cell growth and sensitized cells to PARP inhibitors in vitro, as well as in ovarian cancer organoids and xenograft models. Mechanistically, SIK2 knockdown and SIC-19 treatment reduced RAD50 phosphorylation at Ser635, prevented nuclear translocation of RAD50, disrupted nuclear filament assembly, and impaired DNA homologous recombination repair, ultimately inducing apoptosis. These findings highlight the crucial role of SIK2 in the DNA HR repair pathway and demonstrate the significant PARP inhibitor sensitization achieved by SIC-19 in ovarian cancer. CONCLUSIONS: SIC-19, a novel SIK2 inhibitor, effectively inhibits tumor cell growth in ovarian cancer by interfering with RAD50-mediated DNA HR repair. Furthermore, SIC-19 enhances the efficacy of PARP inhibitors, providing a promising therapeutic strategy to improve outcomes for ovarian cancer patients.

Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide.

The deterministic generation of individual color centers with defined orientations or types in solid-state systems is paramount for advancements in quantum technologies. Silicon vacancies in 4H-silicon carbide (4H-SiC) can be formed in V1 and V2 types. However, silicon vacancies are typically generated randomly between V1 and V2 types with similar probabilities. Here, we show that the preferred V2 centers can be selectively generated by focused ion beam (FIB) implantation on the m-plane in 4H-SiC. When implantation is on the m-plane (a-plane), the generation probability ratio between V1 and V2 centers increase exponentially (remains constant) with decreasing FIB fluences. With a fluence of 10 ions/spot, the probability to generate V2 centers is seven times higher than V1 centers. Our results represent a critical step toward the deterministic creation of specific defect types.

Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering.

4H-silicon carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed and the electron group velocity is significantly increased. The out-of-plane hole mobility of 4H-SiC can be greatly enhanced by ∼200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.

Multiplexed Fluoro-electrochemical Single-Molecule Counting Enabled by SiC Semiconducting Nanofilm.

A major challenge for ultrasensitive analysis is the high-efficiency determination of different target single molecules in parallel with high accuracy. Herein, we developed a quantitative fluoro-electrochemical imaging approach for direct multiplexed single-molecule counting with a SiC-nanofilm-modified indium tin oxide transparent electrode. The nanofilm could control local pH through proton-coupled electron transfer in a lower potential range and further induce direct electrochemical oxidation of the dye molecules with a higher applied potential. The fluoro-electrochemical responses of immobilized single molecules with different pH values and redox behaviors could thus be distinguished within the same fluorescence channels. This method yields nonamplified direct counting of single molecules, as indicated by excellent linear responses in the picomolar range. The successful distinction of seven different randomly mixed dyes underscores the versatility and efficacy of the proposed method in the highly accurate determination of single dye molecules, paving the way for highly parallel single-molecule detection for diverse applications.

Piezocatalysis for Chemical-Mechanical Polishing of SiC: Dual Roles of t-BaTiO3 as a Piezocatalyst and an Abrasive.

Chemical mechanical polishing (CMP) offers a promising pathway to smooth third-generation semiconductors. However, it is still a challenge to reduce the use of additional oxidants or/and energy in current CMP processes. Here, a new and green atomically smoothing method: Piezocatalytic-CMP (Piezo-CMP) is reported. Investigation shows that the Piezo-CMP based on tetragonal BaTiO3 (t-BT) can polish the rough surface of a reaction sintering SiC (RS-SiC) to the ultra-smooth surface with an average surface roughness (Ra) of 0.45 nm and the rough surface of a single-crystal 4H-SiC to the atomic planarization Si and C surfaces with Ra of 0.120 and 0.157 nm, respectively. In these processes, t-BT plays a dual role of piezocatalyst and abrasive. That is, it piezo-catalytically generates in-situ active oxygen species to selectively oxidize protruding sites of SiC surface, yielding soft SiO2, and subsequently, it acts as a usual abrasive to mechanically remove these SiO2. This mechanism is further confirmed by density functional theory (DFT) calculation and molecular simulation. In this process, piezocatalytic oxidation is driven only by the original pressure and friction force of a conventional polishing process, thus, the piezo-CMP process do not require any additional oxidant and energy, being a green and effective polishing method.

Elastic SiC Aerogel for Thermal Insulation: A Systematic Review.

SiC aerogels with their lightweight nature and exceptional thermal insulation properties have emerged as the most ideal materials for thermal protection in hypersonic vehicles; However, conventional SiC aerogels are prone to brittleness and mechanical degradation when exposed to complex loads such as shock and mechanical vibration. Hence, preserving the structural integrity of aerogels under the combined influence of thermal and mechanical external forces is crucial not only for stabling their thermal insulation performance but also for determining their practicality in harsh environments. This review focuses on the optimization of design based on the structure-performance of SiC aerogels, providing a comprehensive review of the inherent correlations among structural stability, mechanical properties, and insulation performance. First, the thermal transfer mechanism of aerogels from a microstructural perspective is studied, followed by the relationship between the building blocks of SiC aerogels (0D particles, 1D nanowires/nanofibers) and their compression performance (including compressive resilience, compressive strength, and fatigue resistance). Moreover, the strategy to improve the high-temperature oxidation resistance and insulation performance of SiC aerogels is explored. Lastly, the challenges and future breakthrough directions for SiC aerogels are presented.

In Situ Insertion of Silicon Nanowires into Hollow Porous Co/NC Polyhedra Enabling Large-Current-Density Hydrogen Evolution Electrocatalysis.

N-doped carbon (NC)-encapsulated transition metal (TM) nanocomposites are considered as alternatives to Pt-based hydrogen evolution reaction (HER) electrocatalysts; however, their poor electron transfer and mass diffusion capability at high current densities hinder their practical application. Herein, an oriented coupling strategy for the in situ grafting of ultrafine Co nanoparticle-embedded hollow porous C polyhedra onto Si nanowires (Co/NC-HP@Si-NWs) is proposed to address this concern. Experimental investigations reveal that the intimate coupling between the Si-NW and Co/NC nanocage forms a multithreaded conductive network, lowering the energy barrier for internal electron transfer. When functionalized as an HER electrocatalyst in 0.5 m H2 SO4 , Co/NC-HP@Si-NWs deliver overpotentials as low as 57 and 440 mV at 10 and 500 mA cm-2 , respectively, which are much better than those of the pristine Co/NC-HP. Moreover, Co/NC-HP@Si-NWs show an outstanding cycle durability of 24 h at 10 and 500 mA cm-2 . The findings of this study are expected to inspire revolutionary work on the development of Si-mediated TM-based electrocatalysts for the HER.

3D-Printed Mullite-Reinforced SiC-Based Aerogel Composites.

There is a growing demand for thermal management materials in electronic fields. Aerogels have attracted interest due to their extremely low density and extraordinary thermal insulation properties. However, the application of aerogels is limited by high production costs and the requirement that aerogel structures not be load-bearing. In this study, mullite-reinforced SiC-based aerogel composite (MR-SiC AC) is prepared through 3D printing combined with in situ growth of SiC nanowires in post processing. The fabricated MR-SiC AC not only has ultra-low thermal conductivity (0.021 W K m-1) and high porosity (90.0%), but also a high Young's modulus (24.4 MPa) and high compressive strength (1.65 MPa), both exceeding the measurements of existing resilient aerogels by an order of magnitude. These properties make MR-SiC AC an ideal solution for the precision thermal management of lightweight structures having complex geometry for functional devices.

SiC@NiO Core-Shell Nanowire Networks-Based Optoelectronic Synapses for Neuromorphic Computing and Visual Systems at High Temperature.

1D nanowire networks, sharing similarities of structure, information transfer, and computation with biological neural networks, have emerged as a promising platform for neuromorphic systems. Based on brain-like structures of 1D nanowire networks, neuromorphic synaptic devices can overcome the von Neumann bottleneck, achieving intelligent high-efficient sensing and computing function with high information processing rates and low power consumption. Here, high-temperature neuromorphic synaptic devices based on SiC@NiO core-shell nanowire networks optoelectronic memristors (NNOMs) are developed. Experimental results demonstrate that NNOMs attain synaptic short/long-term plasticity and modulation plasticity under both electrical and optical stimulation, and exhibit advanced functions such as short/long-term memory and "learning-forgetting-relearning" under optical stimulation at both room temperature and 200 °C. Based on the advanced functions under light stimulus, the constructed 5 × 3 optoelectronic synaptic array devices exhibit a stable visual memory function up to 200 °C, which can be utilized to develop artificial visual systems. Additionally, when exposed to multiple electronic or optical stimuli, the NNOMs effectively replicate the principles of Pavlovian classical conditioning, achieving visual heterologous synaptic functionality and refining neural networks. Overall, with abundant synaptic characteristics and high-temperature thermal stability, these neuromorphic synaptic devices offer a promising route for advancing neuromorphic computing and visual systems.

Crack-Resistant Si-C Hybrid Microspheres for High-Performance Lithium-Ion Battery Anodes.

To effectively solve the challenges of rapid capacity decay and electrode crushing of silicon-carbon (Si-C) anodes, it is crucial to carefully optimize the structure of Si-C active materials and enhance their electron/ion transport dynamic in the electrode. Herein, a unique hybrid structure microsphere of Si/C/CNTs/Cu with surface wrinkles is prepared through a simple ultrasonic atomization pyrolysis and calcination method. Low-cost nanoscale Si waste is embedded into the pyrolysis carbon matrix, cleverly combined with the flexible electrical conductivity carbon nanotubes (CNTs) and copper (Cu) particles, enhancing both the crack resistance and transport kinetics of the entire electrode material. Remarkably, as a lithium-ion battery anode, the fabricated Si/C/CNTs/Cu electrode exhibits stable cycling for up to 2300 cycles even at a current of 2.0 A g-1, retaining a capacity of ≈700 mAh g-1, with a retention rate of 100% compared to the cycling started at a current of 2.0 A g-1. Additionally, when paired with an NCM523 cathode, the full cell exhibits a capacity of 135 mAh g-1 after 100 cycles at 1.0 C. Therefore, this synthesis strategy provides insights into the design of long-life, practical anode electrode materials with micro/nano-spherical hybrid structures.

High-Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH-Universal Adaptability Based on Whole Single-Crystal Integrated Self-Supporting 4H-SiC Nanoarrays.

Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4H-SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W-1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm-2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.

Reversal in Output Current Direction of 4H-SiC/Cu Tribovoltaic Nanogenerator as Controlled by Relative Humidity.

Tribovoltaic nanogenerators (TVNG) represent a fantastic opportunity for developing low-frequency energy harvesting and self-powered sensing, by exploiting their real-time direct-current (DC) output. Here, a thorough study of the effect of relative humidity (RH) on a TVNG consisting of 4H-SiC (n-type) and metallic copper foil (SM-TVNG) is presented. The SM-TVNG shows a remarkable sensitivity to RH and an abnormal RH dependence. When RH increases from ambient humidity up to 80%, an increasing electrical output is observed. However, when RH rises from 80% to 98%, the signal output not only decreases, but its direction reverses as it crosses 90% RH. This behavior differs greatly from that of a Si-based TVNG, whose output constantly increases with RH. The behavior of the SM-TVNG might result from the competition between the built-in electric field induced by metal-semiconductor contact and a strong triboelectric electric field induced by solid-liquid triboelectrification under high RH. The authors also demonstrated that both SM-TVNG and Si-based TVNG can work effectively as-is even fully submerged in deionized water. This mechanism can affect other devices and be applied to design self-powered sensors working under high RH or underwater.

Reduced graphene oxide/SiC nanowire composite aerogel prepared by a hydrothermal method with excellent thermal insulation performance and electromagnetic wave absorption performance.

In aerospace and downhole exploration, materials must function reliably in challenging environments characterized by high temperatures and complex electromagnetic (EM) interference. Graphene oxide (GO) aerogels are promising materials for thermal insulation, and the incorporation of silicon carbide nanowires can enhance their mechanical properties, thermal stability and EM absorption efficiency. In this context, citric acid acts as both a cross-linking and reducing agent, facilitating the formation of a composite aerogel comprising GO and SiC nanowires (rGO/m-SiC NWs). Compared with GO aerogels, the representative composite aerogel sample rGS4 demonstrated significantly improved mechanical properties (yield strength increased by 0.031 MPa), outstanding thermal stability (ability to withstand temperatures up to 800 °C) and remarkably low thermal conductivity (measuring just 0.061 W m-1K-1). Importantly, the composite aerogels displayed impressive EM absorption characteristics, including a slim profile (2.5 mm), high absorption capacity (-42.23 dB) and an exceptionally broad effective absorption bandwidth (7.47 GHz). Notably, the specific effective absorption bandwidth of composite aerogels exceeded that of similar composite materials. In conclusion, rGO/m-SiC NWs exhibited exceptional mechanical properties, remarkable thermal stability, efficient thermal insulation and outstanding microwave absorption capabilities. These findings highlight their potential for use in high-temperature and electromagnetically challenging environments.

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir-Blodgett films on silicon substrate.

Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.

Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC.

This article investigates the radiation effects on as-deposited and annealed AlN films on 4H-SiC substrates under gamma-rays. The AlN films are prepared using plasma-enhanced-atomic-layer-deposition on an n-type 4H-SiC substrate. The AlN/4H-SiC MIS structure is subjected to gamma-ray irradiation with total doses of 0, 300, and 600 krad(Si). Physical, chemical, and electrical methods were employed to study the variations in surface morphology, charge transport, and interfacial trapping characteristics induced by irradiation. After 300 krad(Si) irradiation, the as-deposited and annealed samples exhibit their highest root mean square values of 0.917 nm and 1.190 nm, respectively, which is attributed to N vacancy defects induced by irradiation. Under irradiation, the flatband voltage (Vfb) of the as-deposited sample shifts from 2.24 to 0.78 V, while the annealed sample shifts from 1.18 to 2.16 V. X-ray photoelectron spectrum analysis reveals the decomposition of O-related defects in the as-deposited AlN and the formation of Al(NOx)ycompounds in the annealed sample. Furthermore, the space-charge-limits-conduction (SCLC) in the as-deposited sample is enhanced after radiation, while the barrier height of the annealed sample decreases from 1.12 to 0.84 eV, accompanied by the occurrence of the SCLC. The physical mechanism of the degradation of electrical performance in irradiated devices is the introduction of defects like N vacancies and O-related defects like Al(NOx)y. These findings provide valuable insights for SiC power devices in space applications.

Construction of sub micro-nano-structured silicon based anode for lithium-ion batteries.

The significant volume change experienced by silicon (Si) anodes during lithiation/delithiation cycles often triggers mechanical-electrochemical failures, undermining their utility in high-energy-density lithium-ion batteries (LIBs). Herein, we propose a sub micro-nano-structured Si based material to address the persistent challenge of mechanic-electrochemical coupling issue during cycling. The mesoporous Si-based composite submicrospheres (M-Si/SiO2/CS) with a high Si/SiO2content of 84.6 wt.% is prepared by magnesiothermic reduction of mesoporous SiO2submicrospheres followed by carbon coating process. M-Si/SiO2/CS anode can maintain a high specific capacity of 740 mAh g-1at 0.5 A g-1after 100 cycles with a lower electrode thickness swelling rate of 63%, and exhibits a good long-term cycling stability of 570 mAh g-1at 1 A g-1after 250 cycles. This remarkable Li-storage performance can be attributed to the synergistic effects of the hierarchical structure and SiO2frameworks. The spherical structure mitigates stress/strain caused by the lithiation/delithiation, while the internal mesopores provide buffer space for Si expansion and obviously shorten the diffusion path for electrolyte/ions. Additionally, the amorphous SiO2matrix not only servers as support for structure stability, but also facilitates the rapid formation of a stable solid electrolyte interphase layer. This unique architecture offers a potential model for designing high-performance Si-based anode for LIBs.

Toward High-Performance Piezoresistive Polymer Derived SiOC Ceramics through Masked Stereolithography 3D Printing with ß-Silicon Carbide Nanopowder Reinforcement.

Enhancing the piezoresistivity of polymer-derived silicon oxycarbide ceramics (SiOCPDC ) is of great interest in the advancement of highly sensitive pressure/load sensor technology for use in harsh and extreme working conditions. However, a facile, low cost, and scalable approach to fabricate highly piezoresistive SiOCPDC below 1400 °C still remains a great challenge. Here, the fabrication and enhancement of piezoresistive properties of SiOCPDC reinforced with ß-SiC nanopowders (SiCNP ) through masked stereolithography-based 3D-printing and subsequent pyrolysis at 1100 °C are demonstrated. The presence of free carbon in SiCNP augments high piezoresistivity in the fabricated SiCNP -SiOCPDC composites even at lower pyrolysis temperatures. A gauge factor (GF) in the range of 4385-5630 and 6129-8987 with 0.25 and 0.50 wt% of SiCNP , respectively is demonstrated, for an applied pressure range of 0.5-5 MPa at ambient working conditions. The reported GF is significantly higher compared to those of any existing SiOCPDC materials. This rapid and facile fabrication route with significantly enhanced piezoresistive properties makes the 3D-printed SiCNP -SiOCPDC composite a promising high-performance material for the detection of pressure/load in demanding applications. Also, the overall robustness in mechanical properties and load-bearing capability ensures its long-term stability and makes it suitable for challenging and severe environment applications.

On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band.

This paper presents a comprehensive assessment of the performance of on-chip circularly polarized (CP) circular loop antennas that have been designed and fabricated to operate in the Q/V frequency band. The proposed antenna design incorporates two concentric loops, with the outer loop as the active element and the inner loop enhancing the CP bandwidth. The study utilizes gallium arsenide (GaAs) and silicon carbide (4H-SiC) semiconductor wafer substrates. The measured results highlight the successful achievement of impedance matching at 40 GHz and 44 GHz for the 4H-SiC and GaAs substrates, respectively. Furthermore, both cases yield an axial ratio (AR) of less than 3 dB, with variations in bandwidths and frequency bands contingent upon the dielectric constant of the respective substrate material. Moreover, the outcomes confirm that utilizing 4H-SiC substrates results in a significantly higher radiation efficiency of 95%, owing to lower substrate losses. In pursuit of these findings, a 4-element circularly polarized loop array antenna has been fabricated for operation at 40 GHz, employing a 4H-SiC wafer as a low-loss substrate. The results underscore the antenna's remarkable performance, exemplified by a broadside gain of approximately 9.7 dBic and a total efficiency of circa 92%. A close agreement has been achieved between simulated and measured results.

Microwave-assisted catalytic pyrolysis of waste cooking oil to monocyclic aromatics under a bifunctional SiC ball catalyst.

Catalytic pyrolysis technology proves to be a highly effective approach for waste cooking oil management. However, high-pressure drops and easy deactivation of powder catalysts hinder the industrialization of this technology. In this study, a bifunctional SiC ball (ZSM-5/SiC ball structured) catalyst was prepared to produce monocyclic aromatics. Bifunctional SiC ball catalyst demonstrates notable microwave-responsive properties and remarkable catalytic efficacy. Results showed that the content of monocyclic aromatics under BFSB catalysis with microwave heating was the highest. Weight hourly space velocity is no longer one of the main factors affecting microwave-assisted catalytic pyrolysis under bifunctional SiC ball catalyst. Monocyclic aromatics content did not decrease significantly and was still higher than 86% when space velocity increased from 30 h-1 to 360 h-1. The highest space velocity could only be 180 h-1 under Powder ZSM-5, and the content of the monocyclic aromatics dropped rapidly to 67.68%. Furthermore, even after five operating cycles, the content of monocyclic aromatics with bifunctional SiC ball catalyst continues to surpass the initial content observed with Powder ZSM-5 at 500 °C and 180 h-1. Related characterizations revealed that coking is the primary cause of catalyst deactivation for both catalyst types; however, the bifunctional SiC ball catalyst exhibits a 29.1% lower occurrence of polyaromatic coke formation compared to Powder ZSM-5.

Effect of Diffusion on the Ultimate Axial Load of Complex-Shaped Al-SiC Samples: A Molecular Dynamics Study.

Metal matrix composites (MMCs) combine metal with ceramic reinforcement, offering high strength, stiffness, corrosion resistance, and low weight for diverse applications. Al-SiC, a common MMC, consists of an aluminum matrix reinforced with silicon carbide, making it ideal for the aerospace and automotive industries. In this work, molecular dynamics simulations are performed to investigate the mechanical properties of the complex-shaped models of Al-SiC. Three different volume fractions of SiC particles, precisely 10%, 15%, and 25%, are investigated in a composite under uniaxial tensile loading. The tensile behavior of Al-SiC composites is evaluated under two loading directions, considering both cases with and without diffusion effects. The results show that diffusion increases the ultimate tensile strength of the Al-SiC composite, particularly for the 15% SiC volume fraction. Regarding the shape of the SiC particles considered in this research, the strength of the composite varies in different directions. Specifically, the ultimate strength of the Al-SiC composite with 25% SiC reached 11.29 GPa in one direction, and 6.63 GPa in another, demonstrating the material's anisotropic mechanical behavior when diffusion effects are considered. Young's modulus shows negligible change in the presence of diffusion. Furthermore, diffusion improves toughness in Al-SiC composites, resulting in higher values compared to those without diffusion, as evidenced by the 25% SiC volume fraction composite (2.086 GPa) versus 15% (0.863 GPa) and 10% (1.296 GPa) SiC volume fractions.