The Mechanism of Short-Circuit Oscillations in Automotive-Grade Multi-Chip Parallel Power Modules and an Effective Mitigation Approach.

This paper presents an in-depth analysis of the oscillation phenomenon occurring in multi-chip parallel automotive-grade power modules under short-circuit conditions and investigates three suppression methods. We tested and analyzed two commercial automotive-grade power modules, one containing two chips and the other containing a single chip, and found that short-circuit gate oscillations were more likely to occur in multi-chip parallel packaged modules than in single-chip packaged modules. Through experimental and simulation analyses, we observed that gate oscillations were mainly caused by the interaction between internal parasitic parameters of the module and the external drive circuit, and we found that high drive resistance and low common emitter inductance between parallel chips could effectively suppress gate voltage oscillations. We also analyzed the two mainstream suppression schemes, increasing the drive gate resistance and placing the drive capacitors in parallel. Unfortunately, we found that these suppression schemes were not ideal solutions because both schemes changed the switching characteristics of the power module. As an alternative, we propose a simple and effective solution that involves adding parallel connections between the parallel chips. Simulation calculations showed that this optimized method reduced the emitter inductance between parallel chips in the upper bridge arm by about 30% and in the lower bridge arm by 35%. Through short-circuit experiments conducted at different DC bus voltages, it has been verified that the new optimized solution effectively resolves gate oscillation issues without affecting the switching characteristics of the power module.

A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation.

In the actual operation of urban rail vehicles, it is essential to evaluate the condition of the traction converter IGBT modules. Considering the fixed line and the similarity of operation conditions between adjacent stations, this paper proposes an efficient and accurate simplified simulation method to evaluate IGBT conditions based on operating interval segmentation (OIS). Firstly, this paper proposes the framework for a condition evaluation method by segmenting operating intervals based on the similarity of average power loss between neighboring stations. The framework makes it possible to reduce the number of simulations to shorten the simulation time while ensuring the state trend estimation accuracy. Secondly, this paper proposes a basic interval segmentation model that uses the operating conditions as inputs to implement the segmentation of the line and is able to simplify the operation conditions of entire line. Finally, the simulation and analysis of the temperature and stress fields of IGBT modules based on segmented intervals completes the IGBT module condition evaluation and realizes the combination of lifetime calculation with actual operating conditions and internal stresses. The validity of the method is verified by comparing the interval segmentation simulation with actual test results. The results show that the method can effectively characterize the temperature and stress trends of traction converter IGBT modules in the whole line, which could support the fatigue mechanism and lifetime assessment reliability study of IGBT modules.

Innovative ceramic-matrix composite substrates with tunable electrical conductivity for high-power applications.

A wide band gap semiconductor power module can operate at higher voltages as compared with its traditional silicon counterpart. However, its insulating system undergoes stronger electric fields at the triple point between the ceramic substrate, the metallic tracks and the encapsulating polymer, which can dramatically reduce its lifespan. Here we report an original concept based on the local modification of the substrate properties to mitigate such electrical stress. Numerical simulations revealed its potential to reduce this constraint by up to 50%. This concept was realized by developing, through a practical approach, a novel substrate made of an AlN-based ceramic (material A) integrating a nanocomposite volume endowed with controlled properties and geometry. This approach implies first the spark plasma sintering of the AlN powder with additives (Y2O3, CaF2) to endow the material A with a very low electrical conductivity (σ) and high thermal conductivity (k). Graphene nanoplatelets (GNP) were incorporated within this material to fabricate a nanocomposite with a controlled σ anisotropy that otherwise reached a striking ratio of 106 at 20°C for 1.25 vol% GNP. Our approach secondly aimed at developing an effective process allowing to integrate this nanocomposite into the material A with a very high degree of reproducibility. It finally consisted in establishing the electrical contacts on the achieved substrate and encapsulating it for breakdown testing. The novel substrate enabled a mitigation of the electrical constraint by diminishing its intensity and shifting it from the triple point to a less constrained area. It already brought an improvement in breakdown voltage (VB) by 15% as compared to the traditional substrate, and revealed the potential for achieving higher VB as well. This work lays the foundation for the development of novel multifunctional ceramic-matrix composite substrates sought for power electronics as well as for other potential applications.

Thermal Performance Optimization of Integrated Microchannel Cooling Plate for IGBT Power Module.

In high-integration electronic components, the insulated-gate bipolar transistor (IGBT) power module has a high working temperature, which requires reasonable thermal analysis and a cooling process to improve the reliability of the IGBT module. This paper presents an investigation into the heat dissipation of the integrated microchannel cooling plate in the silicon carbide IGBT power module and reports the impact of the BL series micropump on the efficiency of the cooling plate. The IGBT power module was first simplified as an equivalent-mass block with a mass of 62.64 g, a volume of 15.27 cm3, a density of 4.10 g/cm3, and a specific heat capacity of 512.53 J/(kg·K), through an equivalent method. Then, the thermal performance of the microchannel cooling plate with a main channel and a secondary channel was analyzed and the design of experiment (DOE) method was used to provide three factors and three levels of orthogonal simulation experiments. The three factors included microchannel width, number of secondary inlets, and inlet diameter. The results show that the microchannel cooling plate significantly reduces the temperature of IGBT chips and, as the microchannel width, number of secondary inlets, and inlet diameter increase, the junction temperature of chips gradually decreases. The optimal structure of the cooling plate is a microchannel width of 0.58 mm, 13 secondary inlets, and an inlet diameter of 3.8 mm, and the chip-junction temperature of this structure is decreased from 677 °C to 77.7 °C. In addition, the BL series micropump was connected to the inlet of the cooling plate and the thermal performance of the microchannel cooling plate with a micropump was analyzed. The micropump increases the frictional resistance of fluid flow, resulting in an increase in chip-junction temperature to 110 °C. This work demonstrates the impact of micropumps on the heat dissipation of cooling plates and provides a foundation for the design of cooling plates for IGBT power modules.

Development and Performance Evaluation of Integrated Hybrid Power Module for Three-Phase Servo Motor Applications.

This study aims to develop a 30 kHz/12 kW silicon carbide (SiC)/Si integrated hybrid power module (iHPM) for variable frequency drive applications, particularly industrial servo motor control, and, additionally, to theoretically and experimentally assess its dynamic characteristics and efficiency during operation. This iHPM integrates a brake circuit, a three-phase Si rectifier, and a three-phase SiC inverter within a single package to achieve a minimal current path. A space-vector pulse width modulation (SVPWM) scheme is used to control the inverter power switches. In order to reduce parasitic inductance and power loss, an inductance cancellation design is implemented in the Si rectifier and SiC inverter. The switching transients and their parasitic effects during a three-phase operation are assessed through an electromagnetic-circuit co-simulation model, by which the power loss and efficiency of the iHPM are estimated. The modeled parasitic inductance of the inverter is validated through inductance measurement, and the effectiveness of the simulated results in terms of switching transients and efficiency is verified using the experimental results of the double pulse test and open-loop inverter operation, respectively. In addition, the power loss and efficiency of the SiC MOSFET inverter are experimentally compared against those of a commercial Si IGBT inverter.

Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module.

In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide (SiC) power module is proposed, by fusing optical measurement and multi-physics simulations. The tested power module consists of four parallel SiC metal-oxide semiconductor field-effect transistors (MOSFETs) and four parallel SiC Schottky barrier diodes. This study mainly relies on junction temperature measurements performed using fiber optic temperature sensors instead of temperature-sensitive electrical parameters (TESPs). However, the fiber optics provide a relatively slow response compared to other available TSEP measurement methods and cannot detect fast responses. Therefore, the region corresponding to undetected signals is estimated via multi-physics simulations of the power module. This method provides a compensated cooling curve. We analyze the thermal resistance using network identification by deconvolution (NID). The estimated thermal resistance is compared to that obtained via a conventional method, and the difference is 3.8%. The proposed fusion method is accurate and reliable and does not require additional circuits or calibrations.

Non-Linear Conductivity Epoxy/SiC Composites for Emerging Power Module Packaging: Fabrication, Characterization and Application.

In this paper, SiC/epoxy resin composites containing different amounts of micro-sized SiC with different crystal morphologies were fabricated to study the effects of crystal morphology and temperature on non-linear conductivity characteristics. The research results illustrate that the ß-SiC particles can provide a higher non-linear conductivity, compared with the α-SiC particles. The presence of temperature also affected the non-linear conductivity behaviors of the epoxy/SiC composites. When the α-SiC content was low, the non-linear conductivity coefficient of the composites increased rapidly as the temperature increased, but the non-linear conductivity decreased slightly as the temperature increased when the filler concentration was large enough. To reduce the influence of the electric field concentration effect by the increase in power density on the power module packaging, the voltage sharing application of the SiC/epoxy composites was simulated by COMSOL Multiphysics (v5.2a, COMSOL Inc., Stockholm, Sweden). The results show that the composites with non-linear conductivity can reduce the electric field stress. The emerging insulation material obtained by the SiC-modified epoxy resin can effectively promote electric field distribution uniformity, and ensure the safe operation of the power module.

Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module.

In this work, a 1200V/200A full-SiC half-bridge power module was fabricated for high-power high-frequency application, and the characteristics of gate-source voltage (vgs) at turn-on transient under different output power was investigated via experiments, modeling, and simulation. Also, the comparison of the vgs characteristics between the upper-side and lower-side was conducted. From experiments, the vgs characteristics show negative spike issue and it becomes severe under higher output power conditions. On the other hand, the upper-side and lower-side show different characteristics, namely, the vgs spike of upper-side is superimposed by a 83.3MHz high frequency oscillation during the process of vgs being pulled down, while the vgs spike of lower-side contains no oscillation. The mechanisms behind the influence of output power on the vgs spike characteristics and their difference between the upper-side and lower-side were studied via modeling and simulation. Equivalent RLC (resistance-inductance-capacitance) circuit models were proposed and established for the gate driver loops of the upper-side and lower-side based on the internal structure of the power module. With the help of the proposed models, vgs characteristics of the upper-side and lower-side were simulated and compared with the experimental results. The trend of changes in the vgs pulling-down and oscillation amplitude along with the increasing output power from simulation are consistent with that of the experimental results. In addition, different conditions of gate resistance for the SiC power module are compared. Through the comparison between the experiments and simulations, the validity of the proposed equivalent RLC circuit model and the rationality of the analysis about the mechanisms behind the vgs characteristics at turn-on transient for SiC half-bridge power module are confirmed.

Void Formation/Elimination and Viscoelastic Response of Polyphenylsilsesquioxane Monolith.

Polyphenylsilsesquioxane (PhSiO3/2) particles as an organic-inorganic hybrid were prepared using sol-gel method, and monolithic samples were obtained via a warm-pressing. The reaction mechanism of particles' polymerization and transformation to the monolith under the warm-press were investigated using solid state 29Si nuclear magnetic resonance (NMR) spectrometer, thermal gravimetric-differential thermal analyzer (TG-DTA), mass spectrometer (MS) and scanning electron microscope (SEM). Transparent and void-free monoliths are successfully obtained by warm-pressing above 180 °C. Both the terminal ⁻OH groups on particles' surface and warm-pressing are necessary for preparation of void-free PhSiO3/2 monolith. From the load-displacement measurement at various temperatures, a viscoelastic deformation is seen for PhSiO3/2 monolith with voids. On the other hand, an elastic deformation is seen for void-free PhSiO3/2 monolith, and the void-free monolith shows much higher breakdown voltage.