Valley Depolarization Dynamics in Monolayer Transition-Metal Dichalcogenides: Role of the Satellite Valley.

The valley depolarization dynamics of free holes in monolayer transition-metal dichalcogenides are studied by solving the Boltzmann transport equation in real time fully ab inito. While monolayer MoSe2, WS2, WSe2, and MoTe2 possess long hole valley lifetimes due to the spin-valley locking effect, monolayer MoS2 unexpectedly shows ultrafast valley dynamics, with a hole valley lifetime two orders of magnitude shorter than those of the above four materials at room temperature. It is further revealed that the existence of the satellite Γ valley in MoS2 provides an additional hole relaxation path where the Γ valley acts as an intermediate in the hole relaxation between primary K' and K valleys, and moreover, the strong scattering between primary and satellite valleys ensures the ultrafast valley depolarization. By uncovering the pivotal role of the satellite valley, our results may have significant implications for finely controlling valley depolarization in the multivalley materials.

Type-II Ising Superconductivity in Two-Dimensional Materials with Spin-Orbit Coupling.

Centrosymmetric materials with spin-degenerate bands are generally considered to be trivial for spintronics and related physics. In two-dimensional (2D) materials with multiple degenerate orbitals, we find that the spin-orbit coupling can induce spin-orbital locking, generate out-of-plane Zeeman-like fields displaying opposite signs for opposing orbitals, and create novel electronic states insensitive to the in-plane magnetic field, which thus enables a new type of Ising superconductivity applicable to centrosymmetric materials. Many candidate materials are identified by high-throughput first-principles calculations. Our work enriches the physics and materials of Ising superconductivity, opening new opportunities for future research of 2D materials.

Field-effect birefringent spin lens in ultrathin film of magnetically doped topological insulators.

We investigate the low-energy electron dynamics in two-dimensional ultrathin film of magnetically doped topological insulators in the context of gate-tuned coherent spin manipulation. Our first-principles calculations for such film unambiguously identify its spin-resolved topological band structure arising from spin-orbit coupling and time-reversal symmetry breaking. Exploiting this characteristic, we predict a negative birefraction for chiral electron tunneling through a gate-controlled p-n interface in the film, analogous to optical birefringence. By fine-tuning the gate voltage, a series of unusual phenomena, including electron double focusing, spatial modulation of spin polarizations, and quantum-interference-induced beating patterns, could be efficiently implemented, offering a powerful platform to establish spin-resolved electron optics by all-electrical means.

Dirac fermions in strongly bound graphene systems.

It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. First-principles calculations reveal that a certain transition metal (TM) intercalated graphene/SiC(0001), such as the strongly bound graphene on SiC with Mn intercalation, could be such a system. Different from freestanding graphene, the hybridization between graphene and Mn/SiC leads to the formation of a dispersive Dirac cone of primarily TM d characters. The corresponding Dirac spectrum is still isotropic, and the transport behavior is nearly identical to that of freestanding graphene for a bias as large as 0.6 V, except that the Fermi velocity is half that of graphene. A simple model Hamiltonian is developed to qualitatively account for the physics of the transfer of the Dirac cone from a dispersive system (e.g., graphene) to an originally nondispersive system (e.g., TM).

Magnetism of C adatoms on BN nanostructures: implications for functional nanodevices.

Spin-polarized density functional calculations reveal that magnetism can be induced by carbon adatoms on boron nitride nanotubes (BNNTs) and BN hexagonal sheets. As a result of the localization of impurity states, these hybrid sp-electron systems are spin-polarized, with a local magnetic moment of 2.0 mu(B) per C adatom regardless of the tube diameter and the bonding between the C atom and the BNNTs/BN sheets. An analysis of orbital hybridization indicates that two valence electrons participate in the bonding and the remaining two electrons of the C adatom are confined at the adsorption site and contribute to the magnetism accordingly. The effective interaction distance between the C-induced magnetic moments is evaluated. In terms of the diffusion barrier and the adsorption energy of C adatoms on the BN nanotubes/sheets, a fabrication method for BN-C-based functional nanodevices is proposed, and a series of virtual building blocks for functional devices are illustrated.

Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials.

The interplay of magnetism and topology is a key research subject in condensed matter physics, which offers great opportunities to explore emerging new physics, such as the quantum anomalous Hall (QAH) effect, axion electrodynamics, and Majorana fermions. However, these exotic physical effects have rarely been realized experimentally because of the lack of suitable working materials. Here, we predict a series of van der Waals layered MnBi2Te4-related materials that show intralayer ferromagnetic and interlayer antiferromagnetic exchange interactions. We find extremely rich topological quantum states with outstanding characteristics in MnBi2Te4, including an antiferromagnetic topological insulator with the long-sought topological axion states on the surface, a type II magnetic Weyl semimetal with one pair of Weyl points, as well as a collection of intrinsic axion insulators and QAH insulators in even- and odd-layer films, respectively. These notable predictions, if proven experimentally, could profoundly change future research and technology of topological quantum physics.

Transverse pressure induced phase transitions in boron nitride nanotube bundles and the lightest boron nitride crystal.

We simulate the phase transition processes of aligned crystalline boron nitride (BN) nanotube bundles under transverse pressure, and investigate the phase transition mechanism and transition conditions. The antiparallel polar bonds rule, associated with the interaction between the tubes, is demonstrated to be crucial to such phase transitions. And the curvature of the tubes can greatly affect the phase transition behavior. We discover a unique sp(2)-sp(3)-sp(2) transition and a series of new BN crystal phases including a novel porous sheet-stacking-up form with the lightest density (2.01 g/cm(3)), which could be used in highly efficient energy storage.

Chemical functionalization of carbon nanotubes by carboxyl groups on stone-wales defects: a density functional theory study.

Chemical functionalization of carbon nanotubes with Stone-Wales (SW) defects by carboxyl (COOH) groups is investigated by density functional calculations. Due to the localized donor states induced by the SW defect, the binding of the COOH group with the defective carbon nanotube is stronger than that with the perfect one. A quasi-tetrahedral bonding configuration of carbon atoms, indicating sp3 hybrid bonding, is formed in the adsorption site. The charge distribution analysis shows that, in comparison with benzoic acid, the localized or delocalized pi states on the nanotube would affect the polarities of chemical bonds of the COOH group without losing the acidity. Furthermore, it is found that the double-adsorption system (two COOH groups are respectively adsorbed on two individual carbon atoms of the SW defect) is more energetically favorable than the monoadsorption one. The adsorption of COOH groups leads to a significant change of the electronic states around the Fermi level, which is advantageous for the electrical conductivity. The functionalization by introducing functional groups on the topological defects provides a pathway for applications of carbon nanotubes in chemical sensors and nanobioelectronics.

Pressure and strain effects of hexagonal rare-earth manganites: a first-principles study.

We have investigated the structural, electrical and magnetic properties as well as the phonon modes of hexagonal rare-earth manganites (RMnO3, R = Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm and Lu) under chemical pressure, hydrostatic pressure and epitaxial strain by first-principles calculations. The magnetic ground state of RMnO3 is found to have Γ4 magnetic configuration and to be stable under all considered external conditions. In contrast, the K3 phonon mode, which is the primary order parameter and responsible for the 'improper ferroelectricity', is greatly influenced by pressure and epitaxial strain. Consequently, the electric polarization is enhanced by 56.7% when the chemical pressure increases from R = Pr to R = Lu. The hydrostatic pressure can also improve the polarization to a certain degree, e.g. by 14.7% from 0 GPa to 40 GPa in LuMnO3. Finally, the dependence of polarization on the epitaxial strain is also given, revealing that the compressive strain could promote the ferroelectricity while tensile strain will suppress it.

Manipulating topological phase transition by strain.

First-principles calculations show that strain-induced topological phase transition is a universal phenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities. The transition originates from the opposite responses of the VBM and CBM, whose magnitudes depend critically on the direction of the applied strain. Our work suggests that strain can play a unique role in tuning the electronic properties of topological insulators for device applications, as well as in the achievement of new topological insulators.

Quantum manifestations of graphene edge stress and edge instability: a first-principles study.

We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the zigzag edge stress is noticeably reduced by spin polarization. Such quantum stress effects in turn manifest in mechanical edge twisting and warping instability, showing features not captured by empirical potentials or continuum theory. Edge adsorption of H and Stone-Wales reconstruction are shown to provide alternative mechanisms in relieving the edge compression and hence to stabilize the planar edge structure.

Role of symmetry in the transport properties of graphene nanoribbons under bias.

The intrinsic transport properties of zigzag graphene nanoribbons (ZGNRs) are investigated using first-principles calculations. It is found that although all ZGNRs have similar metallic band structure, they show distinctly different transport behaviors under bias voltages, depending on whether they are mirror symmetric with respect to the midplane between two edges. Asymmetric ZGNRs behave as conventional conductors with linear current-voltage dependence, while symmetric ZGNRs exhibit unexpected very small currents with the presence of a conductance gap around the Fermi level. This difference is revealed to arise from different coupling between the conducting subbands around the Fermi level, which is dependent on the symmetry of the systems.

The adsorption of O2 on Pb films and the effect of quantum modulation: a first-principles prediction.

Using first-principles calculations based on density-functional theory, we systematically study the adsorption of O(2) molecules on ultrathin Pb(111) films ranging from 3 to 11 monolayers (MLs). It is found that no matter how thick the film is, the O(2) molecule prefers to adsorb at the threefold hcp hollow site where it lies parallel to the surface. The adsorption mechanism is discussed from the hybridization of p orbitals of O(2) and Pb. The adsorption energy of O(2) on the Pb(111) film, about several hundred meV, shows a 2 ML oscillation with the thickness. This study well confirms the modulation of the surface reactivity of Pb films induced by the quantum well states, which is compatible with the previous experimental observation.

Intrinsic current-voltage characteristics of graphene nanoribbon transistors and effect of edge doping.

We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 10(3)-10(4), subthreshold swing of 60 meV per decade, and transconductance of 9.5 x 10(3) Sm-1.

Tremendous spin-splitting effects in open boron nitride nanotubes: application to nanoscale spintronic devices.

Our calculations demonstrate that the intrinsic magnetism of boron nitride nanotubes (BNNTs) can be induced by their open ends, and the resulting magnetic moment is sensitive to the chirality of BNNTs. It is found that BNNTs, a pure sp-electron system, present a tremendous spin-splitting larger than 1 eV and that B-rich-ended and N-rich-ended BNNTs exhibit "conjugate", spin-polarized, deep-gap states. Tremendous spin-splitting effects combined with considerable local spin-polarizations at the open ends make BNNTs significant for applications of nanoscale spintronics such as spin-polarized electron emitters.

Hydrostatic-pressure-induced porous gallium nitride from nanotube bundles: an ab initio study.

Ab initio calculations show that (5,5) and (6,6) single-walled gallium nitride nanotubes (GaN NTs) in bundles could aggregate spontaneously to form new condensed phases when bundled tubes are close enough under hydrostatic pressure. The new GaN phases have typical porous structures, constructed by alternating tetragons and hexagons around the original tube walls. Owing to the different compatibilities of the chirality of the tube with the symmetry of the array, the new phase formed from (5,5) GaN NT bundles is triclinic and that from (6,6) ones is hexagonal. These porous GaN phases possess tetrahedral bonding corresponding to sp(3) hybridization, different from sp(2) hybridized bonding in individual GaN NTs. The interaction between tubes not only controls the structural transformation but also influences the electronic structure of porous GaN. We expect that the two-dimensional-channeled porous structure of GaN is advantageous for the usage of GaN as the molecular sieve and as the excellent dilute magnetic semiconductor by considerable magnetic doping.

Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond.

We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band.

Huge enhancement of electromechanical responses in compositionally modulated Pb(Zr(1-x )Tix)O3.

Monte Carlo simulations based on a first-principles-derived Hamiltonian are conducted to study the properties of Pb(Zr1-xTix)O3 alloys compositionally modulated along the [100] pseudocubic direction near the morphotropic phase boundary. It is shown that compositional modulation causes the polarization to continuously rotate away from the modulation direction, resulting in the unexpected triclinic and C-type monoclinic ground states and huge enhancement of electromechanical responses (the peak of piezoelectric coefficient is as high as 30,000 pC/N). The orientation dependence of dipole-dipole interaction in modulated structure is revealed as the microscopic mechanism to be responsible for these anomalies.

Metal-to-semiconductor transition in squashed armchair carbon nanotubes.

We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and the Green's function method. We demonstrate a metal-to-semiconductor transition while squashing the nanotubes and a general mechanism for such a transition. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and bond formation between the flattened faces in the squashed nanotubes.