Detalhe da pesquisa
1.
Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.
Nanotechnology
; 34(15)2023 Feb 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-36649644
2.
Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator.
ACS Appl Mater Interfaces
; 15(47): 54622-54633, 2023 Nov 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-37968841
3.
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subµm Channel Lengths.
ACS Appl Mater Interfaces
; 14(27): 31010-31023, 2022 Jul 13.
Artigo
em Inglês
| MEDLINE | ID: mdl-35785988
4.
Intra-auditory integration between pitch and loudness in humans: Evidence of super-optimal integration at moderate uncertainty in auditory signals.
Sci Rep
; 8(1): 13708, 2018 09 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-30209342