Undirected C-H Bond Activation in Aluminium Hydrido Enaminonates.

Two new aluminium hydrido complexes were synthesized by reacting AlH3 with the enaminone ligand N-(4,4,4-trifluorobut-1-en-3-on)-6,6,6-trifluoroethylamine (HTFB-TFEA) in different molar ratios to obtain mono- and di-hydrido-aluminium enaminonates. Both air and moisture sensitive compounds could be purified via sublimation under reduced pressure. The spectroscopic analysis and structural motif of the monohydrido compound [H-Al(TFB-TBA)2] (3) showed a monomeric 5-coordinated Al(III) centre bearing two chelating enaminone units and a terminal hydride ligand. However, the dihydrido compound exhibited a rapid C-H bond activation and C-C bond formation in the resulting compound [(Al-TFB-TBA)-HCH2] (4a), which was confirmed by single crystal structural data. The intramolecular hydride shift involving the migration of a hydride ligand from aluminium centre to the alkenyl carbon of the enaminone ligand was probed and verified by multi-nuclear spectral studies (1H,1H NOESY, 13C, 19F, and 27Al NMR).

Magnetic Field-Assisted Chemical Vapor Deposition of UO2 Thin Films.

Chemical vapor deposition (CVD) of UO2 thin films from in situ reductive decomposition using a U(VI) precursor ([U(OtBu)6]) was performed under applied magnetic fields (up to 1 T). The molecular mechanism responsible for the formation of U(IV) oxide was determined by nuclear magnetic resonance (NMR) analysis of gaseous byproducts revealed a reductive transformation of uranium hexakis-tert-butoxide into urania. Thin films were grown under zero-field and applied magnetic field conditions that clearly showed the guiding influence of the magnetic field on altering the morphology and crystallographic orientation of grains in UO2 deposits produced under an external magnetic field. Application of magnetic fields was found to reduce the grain size. Whereas films with a ⟨111⟩ preferred orientation were observed under zero-field conditions, the application of magnetic fields (500 mT to 1 T) promoted a polycrystalline growth. X-ray photoelectron spectroscopy confirmed the formation of UO2 films with traces of U(VI) centers present on the surface, which was evidently due to the surface oxidation of coordinatively unsaturated U(IV) centers, which was found to be significantly reduced in the field-assisted process. These findings emphasize the positive effect of magnetic fields on controlling the texture and chemical homogeneity of CVD-grown films. The availability of a magnetic field as an extrinsic parameter for the CVD process adds to the conventional parameters, such as temperature, deposition time, and pressure, and expands the experimental space for thin-film growth.

Piezo-enhanced activation of dinitrogen for room temperature production of ammonia.

The catalytic conversion of nitrogen to ammonia remains an energy-intensive process, demanding advanced concepts for nitrogen fixation. The major obstacle of nitrogen fixation lies in the intrinsically high bond energy (941 kJ mol-1) of the N≡N molecule and the absence of a permanent dipole in N2. This kinetic barrier is addressed in this study by an efficient piezo-enhanced gold catalysis as demonstrated by the room temperature reduction of dinitrogen into ammonia. Au nanostructures were immobilized on thin film piezoelectric support of potassium sodium niobate (K0.5Na0.5NbO3, KNN) by chemical vapor deposition of a new Au(III) precursor [Me2Au(PyTFP)(H2O)]1(PyTFP = (Z)-3,3,3-trifluoro-1-(pyridin-2-yl)-prop-1-en-2-olate) that exhibited high volatility (60 °C, 10-3mbar) and clean decomposition mechanism to produce well adherent elemental gold films on KNN and Ti substrates. The gold-functionalized KNN films served as an efficient catalytic system for ammonia production with a Faradaic efficiency of 18.9% achieved upon ultrasonic actuation. Our results show that the spontaneous polarization of piezoelectric materials under external electrical fields augments the sluggish electron transfer kinetics by creating instant dipoles in adsorbed N2molecules to deliver a piezo-enhanced catalytic system promising for sustained activation of dinitrogen molecules.

Chemical Vapor Deposition of Phase-Pure Uranium Dioxide Thin Films from Uranium(IV) Amidate Precursors.

Homoleptic uranium(IV) amidate complexes have been synthesized and applied as single-source molecular precursors for the chemical vapor deposition of UO2 thin films. These precursors decompose by alkene elimination to give highly crystalline phase-pure UO2 films with an unusual branched heterostructure.

Influence of alkali metal cations on the formation of the heterobimetallic actinide tert-butoxides [AnM3(OtBu)7] and [AnM2(OtBu)6] (AnIV = Th, U; MI = Li, Na, K, Rb, Cs).

Heterobimetallic tert-butoxides of alkali metal cations with tetravalent actinide centers exhibit two distinctive structural motifs, [AnM2(OtBu)6] and [AnM3(OtBu)7] (AnIV = Th, U and MI = Li, Na, K, Rb, Cs), evidently governed by the size of the alkali metal ions. Both [AnM3(OtBu)7] AnM3 (AnIV = U, MI = Li; AnIV = Th, MI = Li, Na) and [AnM2(OtBu)6] AnM2 (AnIV = U, MI = Na-Cs; AnIV = Th, MI = K-Cs) compounds are obtained in nearly quantitative yields by reacting actinide and alkali metal silyl amides with an excess of tert-butyl alcohol. The AnM3 complexes form a cubane-type coordination motif, whereas the AnM2 complexes display a geometry resembling two face-shared bipyramids. The sodium derivatives of thorium and uranium (ThNa3 and UNa2) allow the determination of the structural transition threshold as a function of the ratio of the ionic radii ri(AnIV)/ri(MI). The AnM3 complexes are formed for ratios above 0.92 and the AnM2 type is formed for ratios below 0.87. All compounds are unambiguously characterized in both solution and solid states by NMR and IR spectroscopic studies and single crystal X-ray diffraction analyses, respectively.

Heterobimetallic uranyl(VI) alkoxides of lanthanoids: formation through simple ligand exchange.

Lanthanoid and actinoid silylamides are versatile starting materials. Herein we show how a simple ligand exchange with tert-butanol leads to the formation of the first trimeric heterobimetallic uranyl(VI)-lanthanoid(III) alkoxide complexes. The µ3 coordination of the endogenous uranyl oxo atom results in a significant elongation of the bond length and a significant deviation from the linear uranyl arrangement.

Controlled growth of Cu and CuOx thin films from subvalent copper precursors.

A new Cu(i) precursor, [(COD)Cu(TFB-TFEA)] (COD = 1,5-cyclooctadiene and TFB-TFEA = N-(4,4,4-trifluorobut-1-en-3-on)-6,6,6-trifluoroethylamine) with high volatility and a clean thermal decomposition pattern was tested for thermal and plasma-assisted chemical vapor deposition (CVD). The heteroleptic configuration based on an anionic and a chelating neutral ligand unified both reactivity and sufficient stability resulting in an intrinsic molecular control over the composition of the resulting CVD deposits. The electronic influence of the ligand on the metal site was studied by 1D and 2D NMR spectroscopy, while EI mass spectrometry revealed the ligand elimination cascade. Thermal and plasma CVD experiments demonstrated the suitability of the copper compound for an atom-efficient (high molecule-to-material yield) deposition of copper(0) and copper(i) oxide films that could be converted into crystalline copper(ii) oxide upon heat treatment at 500 °C.