Polymer LEDs with improved efficacy via periodic nanostructure-based aluminum.

Periodic aluminum-capped nanoslit arrays were produced on a polycarbonate plastic substrate by rapid hot embossing nanoimprint lithography and thermal evaporation, and they were used as a transparent window for blue-emitting polymer light-emitting diodes (PLEDs). The external quantum efficiency of blue-emitting PLEDs was enhanced by the surface plasmon polaritons of the periodic aluminum-capped nanoslit arrays. A maximum current efficiency of 4.84 cd/A was achieved for the proposed PLED, which was over 2.2 times that of the reference PLED (2.18 cd/A). These results demonstrate that periodic nanostructure can assist in the simple and low-cost fabrication of high-performance polymer optoelectronic devices.

Efficacy improvement in polymer LEDs via silver-nanoparticle doping in the emissive layer.

The coupling of surface plasmons and excitons in the emissive layer (EML) can improve the performance of polymer light-emitting diodes (PLEDs). Silver nanoparticles (Ag-NPs) with a decahedron structure are prepared by the chemical reduction and photochemical methods and doped directly into the EML after the phase-transfer process. The surface plasmon resonance effect of Ag-NPs, which makes full use of quenched excitons and increases the efficiency of excitons in the EML in a PLED, enhances the current efficacy by a factor of 75 relative to that of the undoped reference device (from 0.22 to 16.64 cd/A). These results demonstrate that Ag-NPs can assist in simple and low-cost fabrication of high-performance polymer optoelectronic devices.

Enhanced luminescence efficiency of Ag nanoparticles dispersed on indium tin oxide for polymer light-emitting diodes.

This study presents a substantial enhancement in electroluminescence achieved by depositing Ag nanoparticles on an ITO-coated glass substrate (Ag/ITO) for approximately 10-s to form novel window materials for use in polymer light-emitting diodes (PLEDs). The PLEDs discussed herein are single-layer devices based on a poly[9,9-dioctylfluorene-co-benzothiadiazole] (F8BT) emissive layer. In addition to its low cost, this novel fabrication method can effectively increase the charge transport properties of the active layer to meet the high performance requirements of PLEDs. Due to the increased conductivity and work function of the Ag/ITO substrate, the electroluminescence intensity was increased by nearly 3.3-fold compared with that of the same PLED with a bare ITO substrate.

[Research on the universal analytic potential function applied to diatomic molecules].

A new method on constructing analytical potential energy functions is presented, and from this a analytical potential energy function applied to both neutral diatomic molecules and charged diatomic molecular ions is obtained. In this paper, the potential energy function is examined by 21 examples of eight different basic kinds of diatomic molecules or ions--homonuclear ground-state for neutral diatomic molecule Na2-X1 sigma g+, homonuclear excitation-state for neutral diatomic molecule C2-A1 pi(u), homonuclear ground-state for charged diatomic molecular ion He2+ -X2 sigma u+, homonuclear excitation-state for charged diatomic molecular ion N2+ -B2 sigma(u), heteronuclear ground-state for neutral diatomic molecule NaLi-X1 sigma g+, heteronuclear excitation-state neutral diatomic molecule BH-B1 sigma+, heteronuclear ground-state for charged diatomic molecular ion (BC)- -X3 pi, and heteronuclear excitation-state for charged diatomic molecular ion (CS)+ -A2 pi etc. The theoretical values of the vibrational energy level of molecules calculated by the potential energy function are compared with RKR (Rydberg-Klein-Rees) or experimental data, and as a consequence, all the results are precisely consistent with RKR data.

Nanoscale surface electrical properties of zinc oxide films investigated by conducting atomic force microscopy.

In this study, conducting atomic force microscopy was employed to investigate the nanoscale surface electrical properties of zinc oxide (ZnO) films prepared by pulsed laser deposition (PLD) at different substrate temperatures for use as anode materials in polymer light-emitting diodes. The results show that the surface conductivity distribution of ZnO is related to its surface structure. At substrate temperatures of 150-200 degrees C, the conducting regions may cover over 90% of the ZnO thin-film surface, thus providing the best local conductivity. Moreover, heating at substrate temperatures of above 250 degrees C can effectively make the conductivity on the ZnO surface uniform. In particular, at substrate temperatures of around 300 degrees C, the conducting regions where currents are between 1 and 2 muA may cover as much as 83% of the surface, and furthermore, the transmission ratio in the visible range is higher than 80%. This is a rather ideal production temperature for the PLD for ZnO films.

Nanoscale electrical properties of ZnO nanorods grown by chemical bath deposition.

Well-aligned zinc oxide nanorod arrays (ZNAs) synthesized using chemical bath deposition were fabricated on a gallium-doped zinc oxide substrate, and the effects of varying the precursor concentrations on the growth and nanoscale electrical properties of the ZNAs were investigated. The as-synthesized ZNAs were characterized using field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), conducting atomic force microscopy (CAFM), and scanning surface potential microscopy (SSPM). The FESEM and AFM images show that the growth rate in terms of length and diameter is highly sensitive to the precursor concentration. CAFM and SSPM analyses indicate that when concentrations of both the zinc acetate and hexamethylenetetramine solutions were 30 mM, the coverage percentages of the recordable and conducting regions on the ZNA surface were 48.3% and 0.9%, which is suitable for application in resistive random access memory devices.

Influence of gallium-doped zinc-oxide thickness on polymer light-emitting diode luminescence efficiency.

Conducting atomic force microscopy and scanning surface potential microscopy were used to study the local electrical properties of gallium-doped zinc oxide (GZO) films prepared by pulsed laser deposition (PLD) on a polyimide (PI) substrate. For a PLD deposition process time of 8 min, the root-mean-square roughness, coverage percentage of the conducting regions, and mean work function on the GZO surface were 2.33 nm, 96.6%, and 4.82 eV, respectively. When the GZO/PI substrate was used for a polymer light-emitting diode (PLED), the electroluminescence intensity increased by nearly 20% compared to a standard PLED, which was based on a commercial-ITO/glass substrate.

Differences between nanoscale structural and electrical properties of AZO:N and AZO used in polymer light-emitting diodes.

Conducting atomic force microscopy and scanning surface potential microscopy were adopted to investigate the nanoscale surface electrical properties of N-doped aluminum zinc oxide (AZO:N) films that were prepared by pulsed laser deposition (PLD) at various substrate temperatures. Experimental results demonstrated that when the substrate temperature is 150 degrees C and the N(2)O background pressure is 150 mTorr, the N-dopant concentration on the surface is optimal. In addition, the root-mean-square roughness value of the film surface, the low contact current (<400 nA) conducting region as a percentage of the total area, and the mean work function value are 1.43 nm, 96.9%, and 4.88 eV, respectively, all of which are better than those of the optimal AZO film made by PLD. This result indicates that N-doped AZO films are better for use as window materials in polymer light-emitting diodes.