1.
Micromachines (Basel)
; 13(1)2021 Dec 22.
Artigo
em Inglês
| MEDLINE
| ID: mdl-35056176
RESUMO
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW-1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.