Enhanced Hydroxyl Adsorption in Ultrathin NiO/Cr2 O3 In-Plane Heterostructures for Efficient Alkaline Methanol Oxidation Reaction.

The exploration of advanced nickel-based electrocatalysts for alkaline methanol oxidation reaction (MOR) holds immense promise for value-added organic products coupled with hydrogen production, but still remain challenging. Herein, we construct ultrathin NiO/Cr2 O3 in-plane heterostructures to promote the alkaline MOR process. Experimental and theoretical studies reveal that NiO/Cr2 O3 in-plane heterostructures enable a favorable upshift of the d-band center and enhanced adsorption of hydroxyl species, leading to accelerated generation of active NiO(OH)ads species. Furthermore, ultrathin in-plane heterostructures endow the catalyst with good charge transfer ability and adsorption behavior of methanol molecules onto catalytic sites, contributing to the improvement of alkaline MOR kinetics. As a result, ultrathin NiO/Cr2 O3 in-plane heterostructures exhibit a remarkable MOR activity with a high current density of 221 mA cm-2 at 0.6 V vs Ag/AgCl, which is 7.1-fold larger than that of pure NiO nanosheets and comparable with other highly active catalysts reported so far. This work provides an effectual strategy to optimize the activity of nickel-based catalysts and highlights the dominate efficacy of ultrathin in-plane heterostructures in alkaline MOR.

π-Conjugated In-Plane Heterostructure Enables Long-Lived Shallow Trapping in Graphitic Carbon Nitride for Increased Photocatalytic Hydrogen Generation.

The relatively short-lived excited states, such as the nascent electron-hole pairs (excitons) and the shallow trapping states, in semiconductor-based photocatalysts produce an exceptionally high charge carrier recombination rate, dominating a low solar-to-fuel performance. Here, a π-conjugated in-plane heterostructure between graphitic carbon nitride (g-CN) and carbon rings (Crings ) (labeling g-CN/Crings ) is effectively synthesized from the thermolysis of melamine-citric acid aggregates via a microwave-assisted heating process. The g-CN/Crings in-plane heterostructure shows remarkably suppressed excited-state decay and increased charge carrier population in photocatalysis. Kinetics analysis from the femtosecond time-resolved transient absorption spectroscopy illustrates that the g-CN/Crings π-conjugated heterostructure produces slower exciton annihilation (τ1  = 7.9 ps) and longer shallow electron trapping (τ2  = 407.1 ps) than pristine g-CN (τ1  = 3.6 ps, τ2  = 264.1 ps) owing to Crings incorporation, both of which enable more photoinduced electrons to participate in the photocatalytic reactions, thereby realizing photoactivity enhancement. As a result, the photocatalytic activity exhibits an eightfold enhancement in visible-light-driven H2 generation. This work provides a viable route of constructing π-conjugated in-plane heterostructures to suppress the excited-state decay and improve the photocatalytic performance.

Spatial Control of Substitutional Dopants in Hexagonal Monolayer WS2 : The Effect of Edge Termination.

The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving desired physicochemical properties. Substitutional doping with adjustable doping levels has been previously demonstrated in 2D transition metal dichalcogenides (TMDs); however, the spatial control of dopant distribution remains an open field. In this work, edge termination is demonstrated as an important characteristic of 2D TMD monocrystals that affects the distribution of substitutional dopants. Particularly, in chemical vapor deposition (CVD)-grown monolayer WS2 , it is found that a higher density of transition metal dopants is always incorporated in sulfur-terminated domains when compared to tungsten-terminated domains. Two representative examples demonstrate this spatial distribution control, including hexagonal iron- and vanadium-doped WS2 monolayers. Density functional theory (DFT) calculations are further performed, indicating that the edge-dependent dopant distribution is due to a strong binding of tungsten atoms at tungsten-zigzag edges, resulting in the formation of open sites at sulfur-zigzag edges that enable preferential dopant incorporation. Based on these results, it is envisioned that edge termination in crystalline TMD monolayers can be utilized as a novel and effective knob for engineering the spatial distribution of substitutional dopants, leading to in-plane hetero-/multi-junctions that display fascinating electronic, optoelectronic, and magnetic properties.

Engineering In-Plane Nickel Phosphide Heterointerfaces with Interfacial sp HP Hybridization for Highly Efficient and Durable Hydrogen Evolution at 2 A cm-2.

The catalytic hydrogen-evolving activities of transition-metal phosphides are greatly related to the phosphorus content, but the physical origin of performance enhancement remains ambiguous, and tuning the catalytic activity of nickel phosphides (NiP2 /Ni5 P4 ) remains challenging due to unfavorable H* adsorption. Here, a strategy is introduced to integrate P-rich NiP2 and P-poor Ni5 P4 into in-plane heterostructures by anion substitution, in which P atoms at the in-plane interfaces perform as active sites to adsorb H* and thus facilitate the hydrogen evolution reaction (HER) process via modulating the electronic structure between NiP2 and Ni5 P4 . Consequently, the NiP2 /Ni5 P4 hybrid exhibits an outstanding hydrogen-evolving activity, requiring only 30 and 76 mV to afford 10 and 100 mA cm-2 in acid, respectively. It surpasses most of the earth-abundant electrocatalysts thus far, and is comparable to Pt catalysts (30/72 mV at 10/100 mA cm-2 ). Particularly, it can run smoothly at large current density and only requires 247 mV to reach 2000 mA cm-2 . Detailed theoretical calculations reveal that its exceptional activity stems from the moderate overlap of density states between P 2p and H 1s orbitals, thus optimizing the H*-adsorption strength. This work highlights a new avenue toward the fabrication of robust non-noble electrocatalysts by constructing in-plane heterojunctions.

Thin In-Plane In2 O3 /ZnIn2 S4 Heterostructure Formed by Topological-Atom-Extraction: Optimal Distance and Charge Transfer for Effective CO2 Photoreduction.

Exploitation of atomic-level principles to optimize the charge transfer on ultrathin 2D heterostructures is an emerging frontier in relieving the energy and environmental crisis. Herein, a facile "topological-atom-extraction" protocol is disclosed, i.e., selective extraction of Zn from ultrathin half-unit-cell ZnIn2 S4 (HZIS) can embed thin In2 O3 domain into 1.60 nm thick HZIS layer to create an atomically thin in-plane In2 O3 /HZIS heterostructure. Thanks to the optimal distance and capability of charge separation, the in-plane In2 O3 /HZIS heterostructure is among the best ZnIn2 S4 -based CO2 reduction reaction (CRR) photocatalysts, and indeed demonstrates a significant increase (from 6.8- to 128-fold) in CO production rate compared with those of out-plane ZIS@In2 O3 and out-plane In2 O3 -HZIScalcined heterostructures. Density Functional Theory simulation reveals that whereas the out-plane heterostructure has a much smaller ∆q of 0.2-0.25 e, the in-plane heterostructure with "zero distance contact" has an optimal ∆q of 1.05 e between In2 O3 and HZIS that induces remarkable charge redistribution on the in-plane heterojunction interface and creates local electric field confined within the ultrathin layer. The charge redistribution efficiently directs the charge-carrier separation in S-scheme photocatalytic system and endows long-lifetime carrier to CRR active HZIS. The findings demonstrate the strong versatility of engineering atomic-level heterojunctions for efficient catalysts design.

Ultrathin In-Plane Heterostructures for Efficient CO2 Chemical Fixation.

Chemical fixation of carbon dioxide (CO2 ) into value-added organics is regarded as a competitive and viable method in large scale industrial production, during which the catalysts with promoting CO2 activation ability are needed. Herein, we proposed an in-plane heterostructure strategy to construct Lewis acid-base sites for efficient CO2 activation. By taking ultrathin in-plane Cu2 O/Cu heterostructures as a prototype, we show that Lewis acid-base sites on heterointerface can facilitate a mixed C and O dual coordination on surface, which not only strengthen CO2 adsorption, but also effectively activate the inert molecules. As revealed by in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and quasi in situ X-ray photoelectron spectroscopy (XPS), Lewis acid-base sites could readily activate CO2 to . CO2 - species, which is the key intermediate radical for CO2 fixation. As a result, abundant Lewis acid-base sites endow Cu2 O/Cu nanosheets with excellent performances for dimethyl carbonate generation, a high conversion yield of 28 % with nearly 100 % selectivity under mild conditions. This study provides a model structure for CO2 fixation reactions.

Recent Advances in Synthesis and Applications of 2D Junctions.

Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.

In-Plane Heterostructures Enable Internal Stress Assisted Strain Engineering in 2D Materials.

Conventional methods to induce strain in 2D materials can hardly catch up with the sharp increase in requirements to design specific strain forms, such as the pseudomagnetic field proposed in graphene, funnel effect of excitons in MoS2 , and also the inverse funnel effect reported in black phosphorus. Therefore, a long-standing challenge in 2D materials strain engineering is to find a feasible scheme that can be used to design given strain forms. In this article, combining the ability of experimentally synthetizing in-plane heterostructures and elegant Eshelby inclusion theory, the possibility of designing strain fields in 2D materials to manipulate physical properties, which is called internal stress assisted strain engineering, is theoretically demonstrated. Particularly, through changing the inclusion's size, the stress or strain gradient can be controlled precisely, which is never achieved. By taking advantage of it, the pseudomagnetic field as well as the funnel effect can be accurately designed, which opens an avenue to practical applications for strain engineering in 2D materials.

Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.

Reliable fabrication of lateral interfaces between conducting and semiconducting 2D materials is considered a major technological advancement for the next generation of highly packed all-2D electronic circuitry. This study employs seed-free consecutive chemical vapor deposition processes to synthesize high-quality lateral MoS2 -graphene heterostructures and comprehensively investigated their electronic properties through a combination of various experimental techniques and theoretical modeling. These results show that the MoS2 -graphene devices exhibit an order of magnitude higher mobility and lower noise metrics compared to conventional MoS2 -metal devices as a result of energy band rearrangement and smaller Schottky barrier height at the contacts. These findings suggest that MoS2 -graphene in-plane heterostructures are promising materials for the scale-up of all-2D circuitry with superlative electrical performance.

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics.

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS2 from the edges of mechanically exfoliated multilayer flakes of WSe2 or NbxMo1-xS2. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS2 on the exfoliated flakes. For the WSe2/MoS2 sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the NbxMo1-xS2/MoS2 in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS2. The formation of a staggered gap band alignment of NbxMo1-xS2/MoS2 is also supported by first-principles calculations.

Recent progress of two-dimensional heterostructures for thermoelectric applications.

The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.

Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3 /CrTe2 Monolayer Magnetic Heterostructures.

Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe3 layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe3 on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe3 are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe3 MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe2 and ML CrTe3 with an atomically sharp and seamless interface. Since ML CrTe2 is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal-semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe3 , as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.

Efficient sulfadiazine degradation via in-situ epitaxial grow of Graphitic Carbon Nitride (g-C3N4) on carbon dots heterostructures under visible light irradiation: Synthesis, mechanisms and toxicity evaluation.

The synthesis of environmental-friendly metal-free photocatalysts has great significance in photocatalytic technology. In this work, we firstly report the successful synthesis of in situ epitaxial growth of g-C3N4 on carbon dots through a facile thermal polymerization technique. Characterization and density functional theory (DFT) calculations were conducted to clarify the structure engineering and the electronic/chemical properties of the in-plane interconnected carbon dots/g-C3N4 (C-CN) heterostructures. With the optimal carbon dots content, the C-CN exhibited 3.2 times higher degradation rate for sulfadiazine (SDZ) than that of g-C3N4. Besides, the C-CN heterostructures displayed excellent stability and reusability in five consecutive cycles. The enhanced photocatalytic activity was related to the narrowed band gap and the local electronic density of valance band and conduction band orbitals of the unique plane heterostructures, corroborated by the spectroscopic characterizations and theoretical calculations. Photogenerated holes dominated the degradation of SDZ, while OH showed a negligible contribution. Moreover, DFT calculation succeeded to predict that the atoms with high Fukin index (f0) on SDZ molecule were more vulnerable to radicals attack. SDZ degradation pathway mainly included smiles-type rearrangement, SO2 extrusion, ring hydroxylation and SN bond cleavage processes. The eco-toxicity assessment revealed the generation of less toxic intermediates after photocatalysis. Our findings not only afford a new technique for constructing g-C3N4-based in-plane heterostructures with high and stable photocatalytic efficiency, but also highlight the feasible application of metal-free photocatalysts in environmental remediation.

2D In-Plane CuS/Bi2WO6 p-n Heterostructures with Promoted Visible-Light-Driven Photo-Fenton Degradation Performance.

Photo-Fenton degradation of pollutants in wastewater is an ideal choice for large scale practical applications. Herein, two-dimensional (2D) in-plane CuS/Bi2WO6 p-n heterostructures have been successfully constructed by an in situ assembly strategy and characterized using XRD, XPS, SEM/TEM, EDX, UV-Vis-DRS, PL, TR-PL, ESR, and VB-XPS techniques. The XPS and the TEM results confirm the formation of CuS/Bi2WO6 heterostructures. The as-constructed CuS/Bi2WO6 showed excellent absorption in visible region and superior charge carrier separation efficiency due to the formation of a type-II heterojunctions. Under visible light irradiation, 0.1% CuS/Bi2WO6 heterostructure exhibited the best photo-Fenton-like catalytic performance. The degradation efficiency of Rhodamine B (RhB, 20 mg·L-1) can reach nearly 100% within 25 min, the apparent rate constant (kapp/min-1) is approximately 40.06 and 3.87 times higher than that of pure CuS and Bi2WO6, respectively. The degradation efficiency of tetracycline hydrochloride (TC-HCl, 40mg·L-1) can reach 73% in 50 min by employing 0.1% CuS/Bi2WO6 heterostructure as a photo-Fenton-like catalyst. The promoted photo-Fenton catalytic activity of CuS/Bi2WO6 p-n heterostructures is partly ascribed to its low carriers recombination rate. Importantly, CuS in CuS/Bi2WO6 heterostructures is conducive to the formation of heterogeneous photo-Fenton catalytic system, in which Bi2WO6 provides a strong reaction site for CuS to avoid the loss of Cu2+ in Fenton reaction, resulting in its excellent stability and reusability. The possible photo-Fenton-like catalytic degradation mechanism of RhB and TC-HCl was also elucidated on the basis of energy band structure analysis and radical scavenger experiments. The present study provides strong evidence for CuS/Bi2WO6 heterostructures to be used as promising candidates for photo-Fenton treatment of organic pollutants.

Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire.

Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.

Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.

Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.