Study on the Effect of "3D-rGO" Buffer Layer on the Microstructure and Properties of SiO2f/SiO2 and TC4 Brazed Joint.

Brazing a SiO2f/SiO2 composite with metals is often faced with two problems: poor wettability with the brazing alloy and high residual stress in the joint. To overcome these problems, we report a combined method of selective etching and depositing reduced graphene oxide (rGO) on the surface of a SiO2f/SiO2 composite (3D-rGO-SiO2f/SiO2) to assist brazing with TC4. After the combined treatment, a "3D-rGO" buffer layer formed on the surface layer of the SiO2f/SiO2, and the contact angle was reduced from 130° to 38°, which meant the wettability of active brazing alloy on the surface of SiO2f/SiO2 was obviously improved. In addition, the "3D-rGO" buffer layer contributed to fully integrating the brazing alloy and SiO2f/SiO2; then, the infiltration of the brazing alloy into the surface layer of the SiO2f/SiO2 was enhanced and formed the reduced graphene oxide with a pinning structure in the three dimensional ("3D-pinning-rGO") structure. Moreover, the joining area of the brazing alloy and SiO2f/SiO2 was expanded and the mismatch degree between the SiO2f/SiO2 and TC4 was reduced, which was achieved by the "3D-pinning-rGO" structure. Furthermore, the concentration of the residual stress in the SiO2f/SiO2-TC4 joints transferred from the SiO2f/SiO2 to the braided quartz fibers, and the residual stress reduced from 142 MPa to 85 MPa. Furthermore, the 3D-pinning-rGO layer facilitated the transfer of heat between the substrates during the brazing process. Finally, the shear strength of the SiO2f/SiO2-TC4 joints increased from 12.5 MPa to 43.7 MPa by the selective etching and depositing rGO method.

Tiling the Silicon for Added Functionality: PLD Growth of Highly Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface.

The application of two-dimensional (2D) materials has alleviated a number of challenges of traditional epitaxy and pushed forward the integration of dissimilar materials. Besides acting as a seed layer for van der Waals epitaxy, the 2D materials─being atom(s) thick─have also enabled wetting transparency in which the potential field of the substrate, although partially screened, is still capable of imposing epitaxial overgrowth. One of the crucial steps in this technology is the preservation of the quality of 2D materials during and after their transfer to a substrate of interest. In the present study, we show that by honing the achievements of traditional epitaxy and wet chemistry a hybrid approach can be devised that offers a unique perspective for the integration of functional oxides with a silicon platform. It is based on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudo-substrate suitable for further overgrowth of functional oxides, such as PbZr1-xTixO3 (PZT). Given that the quality of the films grown on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this approach may provide new routes for direct and "remote" epitaxy or layer-transfer techniques of dissimilar material systems.