CMOS-compatible reconstructive spectrometers with self-referencing integrated Fabry-Perot resonators.

Miniaturized reconstructive spectrometers play a pivotal role in on-chip and portable devices, offering high-resolution spectral measurement through precalibrated spectral responses and AI-driven reconstruction. However, two key challenges persist for practical applications: artificial intervention in algorithm parameters and compatibility with complementary metal-oxide-semiconductor (CMOS) manufacturing. We present a cutting-edge miniaturized reconstructive spectrometer that incorporates a self-adaptive algorithm referenced with Fabry-Perot resonators, delivering precise spectral tests across the visible range. The spectrometers are fabricated with CMOS technology at the wafer scale, achieving a resolution of ~2.5 nm, an average wavelength deviation of ~0.27 nm, and a resolution-to-bandwidth ratio of ~0.46%. Our approach provides a path toward versatile and robust reconstructive miniaturized spectrometers and facilitates their commercialization.

Molecular electronics sensors on a scalable semiconductor chip: A platform for single-molecule measurement of binding kinetics and enzyme activity.

For nearly 50 years, the vision of using single molecules in circuits has been seen as providing the ultimate miniaturization of electronic chips. An advanced example of such a molecular electronics chip is presented here, with the important distinction that the molecular circuit elements play the role of general-purpose single-molecule sensors. The device consists of a semiconductor chip with a scalable array architecture. Each array element contains a synthetic molecular wire assembled to span nanoelectrodes in a current monitoring circuit. A central conjugation site is used to attach a single probe molecule that defines the target of the sensor. The chip digitizes the resulting picoamp-scale current-versus-time readout from each sensor element of the array at a rate of 1,000 frames per second. This provides detailed electrical signatures of the single-molecule interactions between the probe and targets present in a solution-phase test sample. This platform is used to measure the interaction kinetics of single molecules, without the use of labels, in a massively parallel fashion. To demonstrate broad applicability, examples are shown for probe molecule binding, including DNA oligos, aptamers, antibodies, and antigens, and the activity of enzymes relevant to diagnostics and sequencing, including a CRISPR/Cas enzyme binding a target DNA, and a DNA polymerase enzyme incorporating nucleotides as it copies a DNA template. All of these applications are accomplished with high sensitivity and resolution, on a manufacturable, scalable, all-electronic semiconductor chip device, thereby bringing the power of modern chips to these diverse areas of biosensing.

Achromatic CMOS-Integrated Four-Bit Orbital Angular Momentum Mode Detector at Three Wavelengths.

The simultaneous detection of the orbital angular momentum (OAM) and wavelength offers new opportunities for optical multiplexing. However, because of the dispersion of lens functions for Fourier transformation, the mode conversions at distinct wavelengths cannot be achieved in the same plane. Here we propose an ultracompact achromatic complementary metal oxide semiconductor (CMOS)-integrated OAM mode detector. Specifically, a spatial multiplexed scheme, randomly interleaving the phase distributions for distributing the superposed OAM modes into preset positions at distinct wavelengths, is presented. In addition, such a nanoprinted achromatic OAM detector featuring a microscale size and a short focal length can be integrated onto a CMOS chip. Consequently, the four-bit incident light beams at three discrete wavelengths (633, 532, and 488 nm) can be distinguished with a high degree of accuracy evaluated by the average standardized Euclidean distance of ∼0.75 between the analytical and target results. Our results showcase a miniaturized platform for achieving high-capacity information processing.

Electrical Polarity Modulation in V-Doped Monolayer WS2 for Homogeneous CMOS Inverters.

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

CMOS-Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin.

The development of data-intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory-centric paradigm. Within this context, ternary content-addressable memory (TCAM) can become an essential platform for high-speed in-memory matching applications of large data vectors. Compared to traditional static random-access memory (SRAM) designs, TCAM technology using non-volatile resistive memories (RRAMs) in two-transistor-two-resistor (2T2R) configurations presents a cost-efficient alternative. However, the limited sensing margin between the match and mismatch states in RRAM structures hinders the potential of using memory-based TCAMs for large-scale architectures. Therefore, this study proposes a practical device engineering method to improve the switching response of conductive-bridge memories (CBRAMs) integrated with existing complementary metal-oxide-semiconductor (CMOS) transistor technology. Importantly, this work demonstrates a significant improvement in memory window reaching 1.87 × 107 by incorporating nanocavity arrays and modifying electrode geometry. Consequently, TCAM cells using nanocavity-enhanced CBRAM devices can exhibit a considerable increase in resistance ratio up to 6.17 × 105, thereby closely approximating the sensing metrics observed in SRAM-based TCAMs. The improved sensing capability facilitates the parallel querying of extensive data sets. TCAM array simulations using experimentally verified device models indicate a substantial sensing margin of 65× enabling a parallel search of 2048 bits.

Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd3As2grown on Si.

Preparing Cd3As2, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd3As2films grown on Si showing the chiral anomaly. Here,for the first time, we report the novel preparation and fabrication technique of a Cd3As2(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase ofπ. Despite the Hall carrier density (n3D≈9.42×1017cm-3) of our Cd3As2film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd3As2film. Our tailoring growth of Cd3As2on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.

Exploring the Efficacy of Nonlinear Filters in CMOS for 2-D Signal Processing for Image Quality Enhancement.

This study rigorously investigates the effectiveness of nonlinear filters in CMOS for 2-D signal processing to enhance image quality. We comprehensively compare traditional linear filters' performance, which operate on the principle of linearity, with nonlinear filters, such as the median-median (Med-Med) approach, designed to handle nonlinear data. To ensure the validity of our findings, we use widely accepted metrics like normalized squared error (NSE), peak signal-to-noise ratio (PSNR), and structural similarity index (SSIM) to quantify the differences. Our simulations and experiments, conducted under controlled conditions, demonstrate that nonlinear filters in CMOS outperform linear filters in removing impulse noise and enhancing images. We also address the challenges of implementing these algorithms at the hardware level, focusing on power consumption and chip area optimization. Additionally, we propose a new architecture for the Med-Med filter and validate its functionality through experiments using a 9-pixel image sensor array. Our findings highlight the potential of nonlinear filters in CMOS for real-time image quality enhancement and their applicability in various real-world imaging applications. This research contributes to visual technology by combining theoretical insights with practical implementations, paving the way for more efficient and adaptable imaging systems.

Preliminary Characterization of an Active CMOS Pad Detector for Tracking and Dosimetry in HDR Brachytherapy.

We assessed the accuracy of a prototype radiation detector with a built in CMOS amplifier for use in dosimetry for high dose rate brachytherapy. The detectors were fabricated on two substrates of epitaxial high resistivity silicon. The radiation detection performance of prototypes has been tested by ion beam induced charge (IBIC) microscopy using a 5.5 MeV alpha particle microbeam. We also carried out the HDR Ir-192 radiation source tracking at different depths and angular dose dependence in a water equivalent phantom. The detectors show sensitivities spanning from (5.8 ± 0.021) × 10-8 to (3.6 ± 0.14) × 10-8 nC Gy-1 mCi-1 mm-2. The depth variation of the dose is within 5% with that calculated by TG-43. Higher discrepancies are recorded for 2 mm and 7 mm depths due to the scattering of secondary particles and the perturbation of the radiation field induced in the ceramic/golden package. Dwell positions and dwell time are reconstructed within ±1 mm and 20 ms, respectively. The prototype detectors provide an unprecedented sensitivity thanks to its monolithic amplification stage. Future investigation of this technology will include the optimisation of the packaging technique.

Fully Integrated 24-GHz 1TX-2RX Transceiver for Compact FMCW Radar Applications.

A fully integrated 24-GHz radar transceiver with one transmitter (TX) and two receivers (RXs) for compact frequency modulated continuous wave (FMCW) radar applications is here presented. The FMCW synthesizer was realized using a fractional-N phase-locked loop (PLL) and programmable chirp generator, which are completely integrated in the proposed transceiver. The measured output phase noise of the synthesizer is -80 dBc/Hz at 100 kHz offset. The TX consists of a three-bit bridged t-type attenuator for gain control, a two-stage drive amplifier (DA) and a one-stage power amplifier (PA). The TX chain provides an output power of 13 dBm while achieving <0.5 dB output power variation within the range of 24 to 24.25 GHz. The RX with a direct conversion I-Q structure is composed of a two-stage low noise amplifier (LNA), I-Q generator, mixer, transimpedance amplifier (TIA), a two-stage biquad band pass filter (BPF), and a differential-to-single (DTS) amplifier. The TIA and the BPF employ a DC offset cancellation (DCOC) circuit to suppress the strong reflection signal and TX-RX leakage. The RX chain exhibits an overall gain of 100 dB. The proposed radar transceiver is fabricated using a 65 nm CMOS technology. The transceiver consumes 220 mW from a 1 V supply voltage and has 4.84 mm2 die size including all pads. The prototype FMCW radar is realized with the proposed transceiver and Yagi antenna to verify the radar functionality, such as the distance and angle of targets.

Synchronous Driving Method for Stitching Pixel Arrays Based on an Adaptive Correction Technique.

With the application of stitching technology in large-pixel-array CMOS image sensors, the problem of non-synchronized output signals from pixel array bilateral driver circuits has become progressively more serious and has led to the DC perforation of bilateral driver circuits, while conventional clock tree synchronization design methodology does not apply to stitching technology. Therefore, this paper analyses reasons for the inconsistency in the output signals of bilateral driving circuits and proposes a synchronous driving method applicable to stitching pixel arrays based on the idea of on-chip output signal delay detection and calibration. This method detects and corrects the non-synchrony of the row driver output signals on both sides according to changes in the operating environment of the chip. This method is characterized by a simple structure and high reliability. Finally, based on the 55 nm stitching process, simulations are carried out in a CMOS image sensor with a chip area of 77 mm × 84 mm to verify that this method is feasible. This large image sensor with a 150 M pixel array has a frame rate of over 10 FPS.

CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD-Aluminum Oxide.

In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.

Investigating a Machine Learning Approach to Predicting White Pixel Defects in Wafers-A Case Study of Wafer Fabrication Plant F.

CMOS image sensor (CIS) semiconductor products are integral to mobile phones and photographic devices, necessitating ongoing enhancements in efficiency and quality for superior photographic outcomes. The presence of white pixels serves as a crucial metric for assessing CIS product performance, primarily arising from metal impurity contamination during the wafer production process or from defects introduced by the grinding blade process. While immediately addressing metal impurity contamination during production presents challenges, refining the handling of defects attributed to grinding blade processing can notably mitigate white pixel issues in CIS products. This study zeroes in on silicon wafer manufacturers in Taiwan, analyzing white pixel defects reported by customers and leveraging machine learning to pinpoint and predict key factors leading to white pixel defects from grinding blade operations. Such pioneering practical studies are rare. The findings reveal that the classification and regression tree (CART) and random forest (RF) models deliver the most accurate predictions (95.18%) of white pixel defects caused by grinding blade operations in a default parameter setting. The analysis further elucidates critical factors like grinding load and torque, vital for the genesis of white pixel defects. The insights garnered from this study aim to arm operators with proactive measures to diminish the potential for customer complaints.

Wide Voltage Swing Potentiostat with Dynamic Analog Ground to Expand Electrochemical Potential Windows in Integrated Microsystems.

Electrochemical measurements are vital to a wide range of applications such as air quality monitoring, biological testing, food industry, and more. Integrated circuits have been used to implement miniaturized and low-power electrochemical potentiostats that are suitable for wearable devices. However, employing modern integrated circuit technologies with low supply voltage precludes the utilization of electrochemical reactions that require a higher potential window. In this paper, we present a novel circuit architecture that utilizes dynamic voltage at the working electrode of an electrochemical cell to effectively enhance the supported voltage range compared to traditional designs, increasing the cell voltage range by 46% and 88% for positive and negative cell voltages, respectively. In return, this facilitates a wider range of bias voltages in an electrochemical cell, and, therefore, opens integrated microsystems to a broader class of electrochemical reactions. The circuit was implemented in 180 nm technology and consumes 2.047 mW of power. It supports a bias potential range of 1.1 V to -2.12 V and cell potential range of 2.41 V to -3.11 V that is nearly double the range in conventional designs.

A Review of Image Sensors Used in Near-Infrared and Shortwave Infrared Fluorescence Imaging.

To translate near-infrared (NIR) and shortwave infrared (SWIR) fluorescence imaging into the clinic, the paired imaging device needs to detect trace doses of fluorescent imaging agents. Except for the filtration scheme and excitation light source, the image sensor used will finally determine the detection limitations of NIR and SWIR fluorescence imaging systems. In this review, we investigate the current state-of-the-art image sensors used in NIR and SWIR fluorescence imaging systems and discuss the advantages and limitations of their characteristics, such as readout architecture and noise factors. Finally, the imaging performance of these image sensors is evaluated and compared.

The Effect of Pixel Design and Operation Conditions on Linear Output Range of 4T CMOS Image Sensors.

We analyze several factors that affect the linear output range of CMOS image sensors, including charge transfer time, reset transistor supply voltage, the capacitance of integration capacitor, the n-well doping of the pinned photodiode (PPD) and the output buffer. The test chips are fabricated with 0.18 µm CMOS image sensor (CIS) process and comprise six channels. Channels B1 and B2 are 10 µm pixels and channels B3-B6 are 20 µm pixels, with corresponding pixel arrays of 1 × 2560 and 1 × 1280 respectively. The floating diffusion (FD) capacitance varies from 10 fF to 23.3 fF, and two different designs were employed for the n-well doping in PPD. The experimental results indicate that optimizing the FD capacitance and PPD design can enhance the linear output range by 37% and 32%, respectively. For larger pixel sizes, extending the transfer gate (TG) sampling time leads to an increase of over 60% in the linear output range. Furthermore, optimizing the design of the output buffer can alleviate restrictions on the linear output range. The lower reset voltage for noise reduction does not exhibit a significant impact on the linear output range. Furthermore, these methods can enhance the linear output range without significantly amplifying the readout noise. These findings indicate that the linear output range of pixels is not only influenced by pixel design but also by operational conditions. Finally, we conducted a detailed analysis of the impact of PPD n-well doping concentration and TG sampling time on the linear output range. This provides designers with a clear understanding of how nonlinearity is introduced into pixels, offering valuable insight in the design of highly linear pixels.

0.5 V Multiple-Input Fully Differential Operational Transconductance Amplifier and Its Application to a Fifth-Order Chebyshev Low-Pass Filter for Bio-Signal Processing.

This paper presents a multiple-input fully differential operational transconductance amplifier (MI-FD OTA) with very low power consumption. To obtain a differential MOS pair with minimum supply voltage and minimum power consumption, the multiple-input bulk-driven MOS transistor operating in the subthreshold region is used. To show the advantage of the MI-FD OTA, a fifth-order Chebyshev filter was used to realize a low-pass filter capable of operating with a supply voltage of 0.5 V and consuming 60 nW at a nominal setup current of 3 nA. The proposed filter uses five MI-FD OTAs and five capacitors. The total harmonic distortion (THD) was 0.97% for a rail-to-rail sinusoidal input signal. The MI-FD OTA and the filter application were designed and simulated in the Cadence environment using a 0.18 µm CMOS process from TSMC. The robustness of the design was confirmed by Monte Carlo analysis and process, voltage, and temperature corner analysis.

Millimeter-Wave Band Electro-Optical Imaging System Using Polarization CMOS Image Sensor and Amplified Optical Local Oscillator Source.

In this study, we developed and demonstrated a millimeter-wave electric field imaging system using an electro-optic crystal and a highly sensitive polarization measurement technique using a polarization image sensor, which was fabricated using a 0.35-µm standard CMOS process. The polarization image sensor was equipped with differential amplifiers that amplified the difference between the 0° and 90° pixels. With the amplifier, the signal-to-noise ratio at low incident light levels was improved. Also, an optical modulator and a semiconductor optical amplifier were used to generate an optical local oscillator (LO) signal with a high modulation accuracy and sufficient optical intensity. By combining the amplified LO signal and a highly sensitive polarization imaging system, we successfully performed millimeter-wave electric field imaging with a spatial resolution of 30×60 µm at a rate of 1 FPS, corresponding to 2400 pixels/s.

Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor.

We present robust pixel design methodologies for a vertical avalanche photodiode-based CMOS image sensor, taking account of three critical practical factors: (i) "guard-ring-free" pixel isolation layout, (ii) device characteristics "insensitive" to applied voltage and temperature, and (iii) stable operation subject to intense light exposure. The "guard-ring-free" pixel design is established by resolving the tradeoff relationship between electric field concentration and pixel isolation. The effectiveness of the optimization strategy is validated both by simulation and experiment. To realize insensitivity to voltage and temperature variations, a global feedback resistor is shown to effectively suppress variations in device characteristics such as photon detection efficiency and dark count rate. An in-pixel overflow transistor is also introduced to enhance the resistance to strong illumination. The robustness of the fabricated VAPD-CIS is verified by characterization of 122 different chips and through a high-temperature and intense-light-illumination operation test with 5 chips, conducted at 125 °C for 1000 h subject to 940 nm light exposure equivalent to 10 kLux.

Characterization of Partial Discharges in Dielectric Oils Using High-Resolution CMOS Image Sensor and Convolutional Neural Networks.

In this work, an exhaustive analysis of the partial discharges that originate in the bubbles present in dielectric mineral oils is carried out. To achieve this, a low-cost, high-resolution CMOS image sensor is used. Partial discharge measurements using that image sensor are validated by a standard electrical detection system that uses a discharge capacitor. In order to accurately identify the images corresponding to partial discharges, a convolutional neural network is trained using a large set of images captured by the image sensor. An image classification model is also developed using deep learning with a convolutional network based on a TensorFlow and Keras model. The classification results of the experiments show that the accuracy achieved by our model is around 95% on the validation set and 82% on the test set. As a result of this work, a non-destructive diagnosis method has been developed that is based on the use of an image sensor and the design of a convolutional neural network. This approach allows us to obtain information about the state of mineral oils before breakdown occurs, providing a valuable tool for the evaluation and maintenance of these dielectric oils.

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage.

The synergistic effects on the 0.18 µm PPD CISs induced by neutron displacement damage and gamma ionization damage are investigated. The typical characterizations of the CISs induced by the neutron displacement damage and gamma ionization damage are presented separately. The CISs are irradiated by reactor neutron beams up to 1 × 1011 n/cm2 (1 MeV neutron equivalent fluence) and 60Co γ-rays up to the total ionizing dose level of 200 krad(Si) with different sequential order. The experimental results show that the mean dark signal increase in the CISs induced by reactor neutron radiation has not been influenced by previous 60Co γ-ray radiation. However, the mean dark signal increase in the CISs induced by 60Co γ-ray radiation has been remarkably influenced by previous reactor neutron radiation. The synergistic effects on the PPD CISs are discussed by combining the experimental results and the TCAD simulation results of radiation damage.