Determination of effective tip geometries in Kelvin probe force microscopy on thin insulating films on metals.

In scanning probe techniques, accurate height measurements on heterogeneous surfaces are a major requirement. Different electrostatic potentials of various materials have a significant influence on the measured force/current and therefore a direct influence on the tip-sample distance. Kelvin probe force microscopy (KPFM) is based on a dynamic compensation of the electrostatic force while performing non-contact atomic force microscopy measurements. Thus, the influence of the electrostatic potentials can be minimized and accurate height measurements become possible. Here, the study of ultra-thin alkali halide films on Cu(111) investigated by KPFM is presented. This work is focused on the interface between areas of bare Cu(111) and the first layers of salt. The compensation of the electrostatic potential allow us to determine layer heights with high accuracy. The second objective was to elaborate on the characterization of tip geometries across suitable nanostructures. Simulations of measured images are performed with different input parameters, which gives a direct estimation of the effective tip radius and geometry used for the measurements.

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy.

Single sheets of hexagonal boron nitride (h-BN) on transition metals provide a model system for layered insulating materials as well as a functional substrate for molecules and metal clusters. The progress in the understanding of h-BN layers on transition metals was mainly driven by scanning tunnelling microscopy (STM) and photoelectron spectroscopy (PES) measurements within the last decade, while direct measurements of mechanical and electrical properties are still rare. Our investigations of the two-dimensional (2D) h-BN nanomesh on a Rh(111) substrate by high-resolution noncontact atomic force microscopy (nc-AFM) reveal a complex surface structure including a frequently observed contrast inversion. Detailed 2D force spectroscopy measurements are revealing towards a mechanical elastic deformation of the h-BN monolayer caused by the tip-sample interaction. Furthermore, Kelvin probe force microscopy (KPFM) and spectroscopy measurements show local work function variations of the nanomesh, proving the results obtained by PES but additionally providing detailed local information.

Surface photovoltage analysis of thin CdS layers on polycrystalline chalcopyrite absorber layers by Kelvin probe force microscopy.

An extensive Kelvin probe force microscopy study in an ultrahigh vacuum has been undertaken to examine the influence of growth modifications of a few nm thick CdS buffer layers in thin film chalcopyrite solar cells. In regions around the grain boundaries of the polycrystalline Cu(In,Ga)Se(2) substrate a lowering of the work function extending to about 200 nm away from this vertical interface was observed. This electrical inhomogeneity depends strongly on the Cu(In,Ga)Se(2) surface condition and is interpreted by a diffusion process along the substrate grain boundaries. Our results contribute to the understanding of the crucial role of the several nm thick CdS layer for improving the photovoltaic performance of chalcopyrite thin film solar cells.