Absolute position total internal reflection microscopy with an optical tweezer.

A noninvasive, in situ calibration method for total internal reflection microscopy (TIRM) based on optical tweezing is presented, which greatly expands the capabilities of this technique. We show that by making only simple modifications to the basic TIRM sensing setup and procedure, a probe particle's absolute position relative to a dielectric interface may be known with better than 10 nm precision out to a distance greater than 1 µm from the surface. This represents an approximate 10× improvement in error and 3× improvement in measurement range over conventional TIRM methods. The technique's advantage is in the direct measurement of the probe particle's scattering intensity vs. height profile in situ, rather than relying on assumptions, inexact system analogs, or detailed knowledge of system parameters for calibration. To demonstrate the improved versatility of the TIRM method in terms of tunability, precision, and range, we show our results for the hindered near-wall diffusion coefficient for a spherical dielectric particle.

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we use the distinctive, high-quality (Q ∼ 5,500) modes of the cavities, and the change in the highest-intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems but also shed insight into the more fundamental issues of light-matter coupling in such systems.

Geometry-induced Casimir suspension of oblate bodies in fluids.

We predict that a low-permittivity oblate body (disk-shaped object) above a thin metal substrate (plate with a hole) immersed in a fluid of intermediate permittivity will experience a metastable equilibrium (restoring force) near the center of the hole. Stability is the result of a geometry-induced transition in the sign of the force, from repulsive to attractive, that occurs as the disk approaches the hole--in planar or nearly planar geometries, the same material combination yields a repulsive force at all separations, in accordance with the Dzyaloshinskii-Lifshitz-Pitaevskii condition of fluid-induced repulsion between planar bodies. We explore the stability of the system with respect to rotations and lateral translations of the disks and demonstrate interesting transitions (bifurcations) in the rotational stability of the disks as a function of their size. Finally, we consider the reciprocal situation in which the disk-plate materials are interchanged and find that in this case the system also exhibits metastability. The forces in the system are sufficiently large to be observed in experiments and should enable measurements based on the diffusion dynamics of the suspended bodies.

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance.