Analytical Impact-Excitation Theory of Er/O/B Codoped Si Light-Emitting Diodes.

Er doped Si light-emitting diodes may find important applications in silicon photonics and optical quantum computing. These diodes exhibit an emission efficiency 2 orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B codoped Si light-emitting diode which exhibits a strong electroluminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact-excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.8×10^{19} cm^{-3} and up to 45% of them is in an excitation state by impact excitation. This work has important implications for developing efficient classical and quantum light sources based on rare earth elements in semiconductors.

Analytical Photoresponses of Gated Nanowire Photoconductors.

Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, the physics of gate modulation in silicon nanowire photoconductors with the analytical photoresponse equations is investigated. It is found that the impact of gate voltage varies vastly for nanowires with different size. For the wide nanowires that cannot be pinched off by high gate voltage, it is found that the photoresponses are enhanced by at least one order of magnitude due to the gate-induced electric passivation. For narrow nanowires that starts with a pinched-off channel, the gate voltage has no electric passivation effect but increases the potential barrier between source and drain, resulting in a decrease in dark and photocurrent. For the nanowires with an intermediate size, the channel is continuous but can be pinched off by a high gate voltage. The photoresponsivity and photodetectivity is maximized during the transition from the continuous channel to the pinched-off one. This work provides important insights on how to design high-performance photoconductors.

Waveguide-integrated van der Waals heterostructure photodetector on a lithium niobate on insulator platform.

Lithium niobate (LN) photonics has gained significant interest for their distinct material properties. However, achieving monolithically integrated photodetectors on lithium niobate on an insulator (LNOI) platform for communication wavelengths remains a challenge due to the large bandgap and extremely low electrical conductivity of LN material. A two-dimensional (2D) material photodetector is an ideal solution for LNOI photonics with a strong light-matter interaction and simple integration technique. In this work, a van der Waals heterostructure photodiode composed of a p-type black phosphorus layer and an n-type MoS2 layer is successfully demonstrated for photodetection at communication wavelengths on a LNOI platform. The LNOI waveguide-integrated BP-MoS2 photodetector exhibits a dark current as low as 0.21 nA and an on/off ratio exceeding 200 under zero voltage bias with an incident power of 13.93 µW. A responsivity as high as 1.46 A/W is achieved at -1 V bias with a reasonable dark current around 2.33 µA. With the advantages of high responsivity, low dark current, and simple fabrication process, it is promising for the monolithically integrated photodetector application for LNOI photonic platforms at communication wavelengths.

Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr.

This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal splitting in both the conduction and valence bands but also highlight a significant advance in our understanding of the interplay between the optical, electronic, and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

Near-infrared and mid-infrared light emission of boron-doped crystalline silicon.

The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops created by implanting boron into silicon and annealing represent an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the strong thermal quenching effect, resulting in low efficiency at room temperature. Here, we applied a new deep cooling process to address this issue. Interestingly, we find that electrons and holes recombine through defects emitting two photons, one in near infrared (NIR, 1.3∼1.6 µm) and the other in mid-infrared band (MIR, around 3.5 µm). The photoluminescence intensity at NIR increases three fold when the temperature increases from 77 K to 300 K. Furthermore, the NIR light emission of reverse biased silicon diodes was significantly enhanced compared to forward bias, emitting the maximum output power of 42 nW at 60 mA. The results offer new opportunities for the development of infrared light sources in integrated circuits.

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr.

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

High-performance plasmonic mid-infrared bandpass filters by inverse design.

Plasmonic spectral filters composed of periodic nanostructured metal films offer novel opportunities for the development of multispectral imaging technologies in the mid-infrared region. However, traditional plasmonic filters, which typically feature simplistic structures such as nanoholes or nanorings, are constrained by a narrow bandpass and significant crosstalk, leading to limited practical performance. Filters designed using inverse techniques allow a substantial degree of freedom in creating intricate structures that align with desired spectral characteristics, including a quasi-square spectral profile, high transmission, wide full width at half maximum, and reduced crosstalk. In this study, we have utilized an inverse design algorithm to engineer high-performance bandpass filters for the mid-infrared range, achieving an average transmittance exceeding 80% within the bandpass window and below 10% in the stop band, which is comparable to that of commercial multilayer Bragg filters. Nanofabrication processes were employed to transfer the designed pattern into the gold film on ZnS substrate that is transparent in the mid-infrared range. The resulting filters exhibit spectral performance analogous to that of the inversely designed models, making them suitable for direct integration with mid-infrared photodetector arrays in multispectral imaging systems.

Nonlinear absorption and integrated photonics applications of MoSSe.

This study explores the wavelength-dependent and pulse-width-dependent nonlinear optical properties of liquid-phase exfoliated molybdenum sulfide selenide (MoSSe) nanosheets. The saturable absorption response of MoSSe nanosheets in the visible region is better than that in the near-infrared region, and the response under 6-ns pulse excitation is better than that of a 380-fs pulse. Furthermore, based on the first-principles calculations, we designed a phase modulator and optimized its structure by integrating a monolayer MoSSe into a silicon slot waveguide. The simulation results revealed that the phase shift could achieve a high optical extinction. Consequently, MoSSe exhibits satisfactory nonlinear optical properties and an excellent potential for applications in optoelectronic devices.

Magnetophoretic capacitors for storing single particles and magnetized cells in microfluidic devices.

Precise positioning of magnetic particles and magnetized cells in lab-on-a-chip systems has attracted broad attention. Recently, drawing inspiration from electrical circuits, we have demonstrated a magnetic particle transport platform composed of patterned magnetic thin films in a microfluidic environment, which accurately moves the particles and single cells to specific spots, called capacitors. However, we have made no prior attempts to optimize the capacitor geometry. Here, we carefully analyze various design parameters and their effect on capacitor operation. We run simulations based on finite element methods and stochastic numerical analysis using our semi-analytical model. We then perform the required experiments to study the loading efficiency of capacitors with different geometries for magnetic particles of multiple sizes. Our experimental results agree well with the design criteria we developed based on our simulation results. We also show the capability of designed capacitors in storing the magnetically labeled cells and illustrate using them in a pilot drug screening application. These results are directly applicable to the design of robust platforms capable of transporting and assembling a large number of single particles and single cells in arrays, which are useful in the emerging field of single-cell analysis.

Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes.

Delta doping (δ-doping) can find a wide range of applications in advanced metal oxide semiconductor field effect transistors, deep UV photodetectors, quantum devices, and others. In this work, we formed a δ-doping layer in silicon by employing flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The δ-doping layer is atomically thin (<1 nm). Low-temperature Hall measurements show that the δ-doping layer is in a metallic state and exhibits a weak localization phenomenon, implying that a two-dimensional electron gas is formed. When we form such an n-type δ-doping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector is created, which traditionally was only possible by using wide band gap semiconductors such as gallium nitride (GaN) or silicon carbide (SiC).

Analytical Transient Responses and Gain-Bandwidth Products of Low-Dimensional High-Gain Photodetectors.

Low-dimensional photodetectors, in particular those in photoconductive mode, often have extraordinarily high photogain. However, high gain always comes along with a slow frequency response. The gain-bandwidth product (GBP) is a figure of merit to evaluate the performance of a photodetector. Whether the high-gain photoconductors can outperform standard PIN photodiodes in terms of GBP remains an open question. In this article, we derived the analytical transient photoresponses of nanowire photoconductors which were validated with the simulations and experiments. Surprisingly, the fall transients do not follow a simple time-dependent exponential function except for some special cases. Given the analytical photogains that were established previously, we derived the theoretical GBP of high-gain nanowire photoconductors. Analysis of the analytical GBP indicates that nanoscale photoconductors, although having extremely high gain, will never outperform typical PIN photodiodes in terms of GBP.

Extended infrared responses in Er/O-hyperdoped Si at room temperature.

Silicon photonics has become the preferred candidate for technologies applicable to multifarious fields. However, the applications are strictly limited by the intrinsic in-band photo effect of silicon. Herein, near-infrared photodetectors that break through the silicon bandgap by Er/O hyperdoping are fabricated, potentially extending their applications into telecommunications, low-light-level night vision, medical treatment, and others. Er/O-hyperdoped silicon was achieved as an infrared light absorption layer through ion implantation. The lattice damage caused by ion implantation was repaired by a deep cooling process in which high-temperature samples were cooled by helium flushing cooled by liquid nitrogen. Traditional junction and metallization processes were performed to form a photodiode. We demonstrate that the device has a spectral range up to the wavelength of 1568 nm, a maximum responsivity of 165 µA/W at 1310 nm, and 3 dB cutoff bandwidth up to 3 kHz. Finally, temperature-dependent optical-electrical characteristics were measured to demonstrate the activation mechanism of Er/O in silicon. This Letter proves silicon's potential in realizing extended infrared detection at room temperature, and it provides a possible way to fabricate infrared optoelectronics and signal processing integrated chips on a CMOS (complementary metal-oxide-semiconductor) platform.

Explicit Gain Equations for Hybrid Graphene-Quantum-Dot Photodetectors.

Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photogain. This high gain is often explained by the classical gain theory which is unfortunately an implicit function and may even be questionable. In this work, explicit gain equations for hybrid graphene-quantum-dot photodetectors are derived. Because of the work function mismatch, lead sulfide quantum dots coated on graphene will form a surface depletion region near the interface of quantum dots and graphene. Light illumination narrows down the surface depletion region, creating a photovoltage that gates the graphene. As a result, high photogain in graphene is observed. The explicit gain equations are derived from the theoretical gate transfer characteristics of graphene and the correlation of the photovoltage with the light illumination intensity. The derived explicit gain equations fit well with the experimental data, from which physical parameters are extracted.

Explicit Gain Equations for Single Crystalline Photoconductors.

Photoconductors based on semiconducting thin films, nanowires, and two-dimensional atomic layers have been extensively investigated in the past decades. However, there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowires were fabricated by patterning the device layer of silicon-on-insulator wafers by standard lithography that were doped with boron at a concentration of ∼8.6 × 1017 cm-3. It was found that the as-fabricated silicon nanowires have a surface depletion region ∼32 nm wide. This depletion region protects charge carriers in the channel from surface scatterings, resulting in the independence of charge carrier mobilities on nanowire size. Under light illumination, the depletion region logarithmically narrows down, and the nanowire channel widens accordingly. Photo Hall effect measurements show that the nanowire photoconductance is not contributed by the increase of carrier concentrations but by the widening of the nanowire channel. As a result, a nanowire photoconductor can be modeled as a resistor in connection with floating Schottky junctions near the nanowire surfaces. Based on the photoresponses of a Schottky junction, we derived explicit photogain equations for nanowire photoconductors that are a function of light intensity and device physical parameters. The gain equations fit well with the experimental data, from which we extracted the minority carrier lifetimes as tens of nanoseconds, consistent with the minority carrier lifetime in nanowires reported in literature.

Silicon nanowire core-shell PN junction phototransistors by self-assembled monolayer doping.

Nanoscale photoconductors often have extremely high gain in quantum efficiency but suffer from the difficulty to design the density of surface states that cause the high photogain. In this Letter, we created high-gain photoconductors by forming a core-shell PN junction in silicon nanowires via self-assembled molecular monolayer doping. The highly doped n-type shell deactivates all the surface states by filling with electrons so that the n-type shell as a well, instead of the surface states, captures and emits photogenerated minority electrons under ON/OFF light illumination. The corresponding excess majority holes are accumulated in the nanowire channel and thus modulate the channel width, resulting in the experimentally observed high photogain (∼108). The photoresponses of these phototransistors were systematically investigated as a function of the nanowire width and light illumination intensity. The results show that the nanowire channel is pinched off for the nanowires narrower than 73 nm due to the core-shell PN junction. We further derived analytical equations based on the PN junction device principle, finding the explicit gain equation that governs the photogain as a function of light intensity and other physical parameters of the nanowires. The explicit gain equations can fit well with the experimental data and allow us to design the core-shell nanowire phototransitors with desired performance.

Plasmonic micropipe spectral filters in mid-infrared.

Multispectral analyzers based on nanostructured plasmonic spectral filters can potentially find a wide range of applications. However, spectral filters based on the widely reported microhole or ring arrays suffer from relatively wide filtering bands, resulting in a relatively low spectral resolution. In this work, we fabricate high-performance spectral filters based on vertically standing micropipes on a silver film. An infrared spectral microscope is used to investigate the properties of these micropipe spectral filters. The results indicate that the micropipe spectral filters have a full width at half-maximum ∼5 times smaller than the microhole filters at the same wavelength. Micropipe spectral filters are expected to significantly improve the spectral resolution of multispectral analyzers.

Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon.

Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely appraised for its advantages of doping nanoelectronic devices for applications in the complementary metal-oxide-semiconductor transistor (CMOS) industry. However, defects introduced by SAMM-doping will limit the performance of the devices. Previously, we have found that SAMM-doping can bring carbon impurities into the silicon substrate and these unwanted carbon impurities can deactivate phosphorus dopants by forming an interstitial carbon (Ci)-substitutional phosphorus (Ci-Ps) complex. Herein, to develop a defect-free SAMM-doping process, the generation and annihilation of Ci-related defects are investigated by extending the thermal annealing time from 2 to 10 min using secondary ion mass spectrometry and deep-level transient spectroscopy. The results show that the concentration of Ci-related carbon defects is lower after a longer time of thermal annealing, although a longer annealing time actually introduces a higher concentration of carbon impurities into Si. This observation indicates that interstitial carbon evolves into substitutional carbon (Cs) that is electrically inactive during the thermal annealing process. A defect-free SAMM-doping process may be developed by an appropriate post-annealing process.

Mid-infrared plasmonic multispectral filters.

A miniaturized mid-infrared spectral analyzer will find a wide range of applications as a portable device in non-invasive disease diagnosis, environmental monitoring, food safety and others. In this work, we report an integrated spectral analyzer that can be constructed by using Au subwavelength hole arrays as multispectral filters. The hole arrays were fabricated with CMOS compatible processes. The transmission peak of the subwavelength hole arrays is continuously tuned from 3 µm to 14 µm by linearly increasing the periodicity of the holes in each array. Fourier transform infrared (FTIR) microscopy was applied to spatially map out the transmission of the hole arrays. The results show that each hole array can selectively allow for transmission at a specific wavelength. We further constructed an IR spectral analyzer model based on the microhole multispectral filters to retrieve IR spectral information of two test samples. Our experimental results show that the spectra from the integrated spectral analyzer follow nearly the same pattern of the FTIR spectra of the test samples, proving the potential of the miniaturized spectral analyzer for chemical analysis.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.