RESUMO
The functionality of optical components relies heavily on the composition-dependent properties of germanosilicate materials, which include the refractive index, photosensitivity, and microstructural properties. Recent studies and parallel developments are presented of germanosilicate films with composition x of Ge content (i.e., xGeO(2):(1-x)SiO(2)) that were synthesized by the solgel process for various integrated photonic applications undertaken. The following novel aspects are discussed with respect to the effect of composition of the glassy films (0.05=x=0.40): determination of spectral optical properties, UV imprinting of optical waveguides with relatively large index change (Dn), and quantum-well intermixing enhancement observed in InGaAs(P)/InP quantum-well optical devices. The implications of the results are discussed.
RESUMO
We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.