Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity.

This paper evaluates the non-uniformity degree of platinum and chromium Schottky contacts on silicon carbide. The forward characteristics of experimental samples were acquired in a wide, 60-500 K, temperature range. Microstructural and conventional electrical characterizations were performed, revealing the presence of inhomogeneities on the contact surface. The main parameters were extracted using inhomogeneity models of varying complexity levels. Their relevance is discussed with respect to the models' applicable, limited, temperature ranges. Finally, complete forward curve fitting was achieved using p-diode modeling, evincing that each type of contact behaves as four parallel-connected ideal diodes. Since these parallel diodes have varying influences on the overall device current with temperature and bias, operable domains can be identified where the samples behave suitably.

Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering.

In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films' optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i.e., GaN/AlN/Si and GaN/AlN/Al2O3) has been carried out. Within the epitaxial GaN layer defined by the relationship F4¯3m (111) 3C-SiC || P63mc (0002) AlN || P63mc (0002) GaN, the total dislocation density has been assessed as being 1.47 × 1010 cm-2. Compared with previously investigated heterostructures (on Si and Al2O3 substrates), the obtained dislocation correlation lengths (Le = 171 nm and Ls =288 nm) and the mean distance between two dislocations (rd = 82 nm) are higher. This reveals an improved crystal quality of the GaN with SiC as a growth template. In addition, the DBS measurements upheld the aforementioned results with a higher effective positron diffusion length LeffGaN2 = 75 ± 20 nm for the GaN layer.

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments.

The present article evaluates, in qualitative and quantitative manners, the characteristics (i.e., thickness of layers, crystal structures, growth orientation, elemental diffusion depths, edge, and screw dislocation densities), within two GaN/AlN/Si heterostructures, that alter their efficiencies as positron moderators. The structure of the GaN film, AlN buffer layer, substrate, and their growth relationships were determined through high-resolution transmission electron microscopy (HR-TEM). Data resulting from high-resolution X-ray diffraction (HR-XRD) was mathematically modeled to extract dislocation densities and correlation lengths in the GaN film. Positron depth profiling was evaluated through an experimental Doppler broadening spectroscopy (DBS) study, in order to quantify the effective positron diffusion length. The differences in values for both edge (ρde) and screw (ρds) dislocation densities, and correlation lengths (Le, Ls) found in the 690 nm GaN film, were associated with the better effective positron diffusion length (Leff) of LeffGaN2 = 43 ± 6 nm.

Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure.

This study assesses the characteristics (edge and screw dislocation density) of a commercially available GaN/AlN/Al2O3 wafer. The heterostructure was evaluated by means of high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), and Doppler-Broadening Spectroscopy (DBS). The results were mathematically modeled to extract defect densities and defect correlation lengths in the GaN film. The structure of the GaN film, AlN buffer, Al2O3 substrate and their growth relationships were determined through HR-TEM. DBS studies were used to determine the effective positron diffusion length of the GaN film. Within the epitaxial layers, defined by a [GaN P 63 m c (0 0 0 2) || P 63 m c AlN (0 0 0 2) || (0 0 0 2) R 3 ¯ c Al2O3] relationship, regarding the GaN film, a strong correlation between defect densities, defect correlation lengths, and positron diffusion length was assessed. The defect densities ρ d e = 6.13 × 1010 cm-2, ρ d s = 1.36 × 1010 cm-2, along with the defect correlation lengths Le = 155 nm and Ls = 229 nm found in the 289 nm layer of GaN, account for the effective positron diffusion length Leff~60 nm.

Micromechanical and positron annihilation lifetime study of new cellulose esters with different topological structures.

Two new groups of cellulose esters with a substituent, either trifluoromethylbenzoate or methylbenzoate, were synthesized in homogeneous conditions. The actual presence of aromatic substituents was demonstrated by 1H-NMR spectra. The mechanical and structural peculiarities were determined by Depth Sensing Indentation (DSI) and Positron Annihilation Lifetime Spectroscopy (PALS) techniques. The relative position of CH3 and CF3 groups on the aromatic substituents influences the molecular packing differently and affects the formation of free volumes. The hardness characteristics and modulus of the corresponding cellulose esters were the lowest when the CH3 and CF3 groups are in m-position on the aromatic substituents. Meanwhile, they exhibited the highest number density of the free volume holes, as revealed by the o-Ps intensity values. An inverse linear relationship between the hardness, respectively on the modulus, and the o-Ps intensity was found. A simplified scheme of the structural feature of the investigated cellulose esters was proposed.

Silica hybrid sol-gel materials with unusually high concentration of Pt-organic molecular guests: studies of luminescence and nonlinear absorption of light.

The development of new photonic materials is a key step toward improvement of existing optical devices and for the preparation of a new generation of systems. Therefore synthesis of photonic hybrid materials with a thorough understanding and control of the microstructure-to-properties relationships is crucial. In this perspective, a new preparation method based on fast gelation reactions using simple dispersion of dyes without strong covalent bonding between dye and matrix has been developed. This new sol-gel method is demonstrated through synthesis of monolithic siloxane-based hybrid materials highly doped by various platinum(II) acetylide derivatives. Concentrations of the chromophores as high as 400 mM were obtained and resulted in unprecedented optical power limiting (OPL) performance at 532 nm of the surface-polished solids. Static and time-resolved photoluminescence of the prepared hybrid materials were consistent with both OPL data and previous studies of similar Pt(II) compounds in solution. The impacts of the microstructure and the chemical composition of the matrix on the spectroscopic properties, are discussed.

Surface modification of mica due to titanium sputtering as studied by positron annihilation.

Study was conducted of surface structural modification of layered sheets of mica that had been subjected to titanium (Ti) sputter coating, use being made of a variable but mono energetic slow positron beam. Comparison has been drawn with the structure of pure muscovite mica sheet. Doppler broadening (DB) of the energy of annihilation radiation has been used as a parameter to assay changes in the surface characteristics within a depth profile of 500 angstroms. In support of these investigations, X-ray reflectivity data was used to assay titanium film thickness and the electron density profile of the film on mica. Finally, changes involving the surface micro-morphology of the system have been corroborated by scanning electron microscopy.