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1.
J Phys Condens Matter ; 36(31)2024 May 09.
Artigo em Inglês | MEDLINE | ID: mdl-38663409

RESUMO

Metal-organic frameworks (MOFs) are an intriguing group of porous materials due to their potential influence on the development of indispensable technologies like luminescent sensors and solid-state light devices, luminescent multifunctional nanomaterials. In this research work we explored MIL-53(Al), an exceptional class of MOF that, along with guest adsorption, undergoes structural transitions exhibiting breathing behavior between narrow pore and large pore under temperature and mechanical stress. Therefore, we opted for the time resolved luminescence and FT-Raman spectroscopy to investigate the mechanochromic and thermochromic response of this material under external stimuli. Intriguingly, when subjected to temperature changes, MIL-53(Al) exhibited a ratiometric fluorescence behavior related to the reversible relationship of photoluminescence emission intensity with respect to temperature. Moreover, under higher mechanical stress MIL-53(Al) displayed turn-on behavior in emission intensity, hence offering a thrilling avenue for the application in mechanically deformed-based luminescent sensors and ratiometric fluorescence temperature sensors.

2.
Phys Chem Chem Phys ; 19(34): 22670-22677, 2017 Aug 30.
Artigo em Inglês | MEDLINE | ID: mdl-28812086

RESUMO

The photoluminescence behaviour of carbon-based nanodots is still debated. Both core and surface structures are involved in the emission mechanism, and the electronic transitions can be modified by external agents such as metal ions or pH, but the general relation between the structure and the optical function is poorly understood. Here, we report a comparative study on the effects of these variables, changing the core structure from crystalline to amorphous, and modifying the surface structure by different passivation procedures. Our results highlight that the emission mechanism of the tunable visible fluorescence is identical for crystalline and amorphous samples, indicating the independence of the emission from the core structure. Furthermore, surface functionalization weakly influences the emission peak position, but has large consequences on their interaction with different metal ions. This suggests the involvement of quasi-degenerate electronic states originating from the high density of different interacting groups on the surface. Finally, we report the presence of an unusual ultraviolet emission band for the amorphous sample, likely involving localized molecular-type chromophores with carboxyl ends. Our findings provide new information on the emission mechanisms of CDs and can be used to engineer sub-types of CDs displaying very similar emission features, but specifically tailored for different sensing applications.

3.
Nanoscale ; 9(33): 11902-11911, 2017 Aug 24.
Artigo em Inglês | MEDLINE | ID: mdl-28660936

RESUMO

Fluorescent carbon nanodots are a novel family of carbon-based nanoscale materials endowed with an outstanding combination of properties that make them very appealing for applications in nanosensing, photonics, solar energy harvesting and photocatalysis. One of the remarkable properties of carbon dots is their strong sensitivity to the local environment, especially to metal ions in solution. These interactions provide a testing ground for their marked photochemical properties, highlighted by many studies, and frequently driven by charge transfer events. Here we combine several optical techniques, down to femtosecond time resolution, to understand the interplay between carbon nanodots and aqueous metal ions such as Cu2+ and Zn2+. We find that copper inhibits the fluorescence of carbon dots through static and diffusional quenching mechanisms, and our measurements allow discriminating between the two. Ultrafast optical methods are then used to address the dynamics of copper-dot complexes, wherein static quenching takes place, and unveil the underlying complexity of their photocycle. We propose an initial increase of electronic charge on the surface of the dot, upon photo-excitation, followed by a partial electron transfer to the nearby ion, with 0.2 ps and 1.9 ps time constants, and finally a very fast (≪1 ps) non-radiative electron-hole recombination which brings the system back to the ground state. Notably, we find that the electron transfer stage is governed by an ultrafast water rearrangement around photo-excited dots, pointing out the key role of solvent interactions in the photo-physics of these systems.

4.
J Phys Condens Matter ; 27(36): 365301, 2015 Sep 16.
Artigo em Inglês | MEDLINE | ID: mdl-26302715

RESUMO

A structured emission/excitation pattern, proper of isolated defects, arises in a vacuum from silica nanoparticles. The luminescence, centered around 3.0-3.5 eV, is characterised by a vibronic progression due to the phonon coupling with two localised modes of frequency ∼1370 cm(-1) and ∼360 cm(-1), and decays in about 300 ns at 10 K. On increasing the temperature, the intensity and the lifetime decrease due to the activation of a non-radiative rate from the excited state. Concurrently, the temperature dependence of the lineshape evidences the low coupling with non-localised modes of the matrix (Huang-Rhys factor S ~ 0.2) and the poor influence of the inhomogeneous broadening. These findings outline an uncommon behaviour in the field of the optical properties of defects in amorphous solids, evidencing that the silica surface can allocate luminescent defects almost disentangled from the basal network.

5.
Phys Chem Chem Phys ; 16(26): 13360-6, 2014 Jul 14.
Artigo em Inglês | MEDLINE | ID: mdl-24875219

RESUMO

Matrix isolation is a method which plays a key role in isolating and characterizing highly reactive molecular radicals. However, the isolation matrices, usually composed of noble gases or small diamagnetic molecules, are stable only at very low temperatures, as they begin to desegregate even above a few tens of Kelvin. Here we report on the successful isolation of CH3˙ radicals in the cages of a nearly inert clathrate-SiO2 matrix. This host is found to exhibit a comparable inertness with respect to that of most conventional noble gas matrices but it is characterized by a peculiar thermal stability. The latter property is related to the covalent nature of the host material and gives the opportunity to study the confined radicals from a few degrees of Kelvin up to at least room temperature. Thanks to this advantage we were able to explore with continuity for the first time the CH3˙ rotor properties by electron paramagnetic resonance spectroscopy, starting from the quantum rotations which are observable only at the lowest temperatures (T ≈ 4 K), going through the gradual transition to the classical motion (4 K < T < 30 K), and ending with the properties of the fully classical rotor (T > 30 K). The method of isolation presented here is found to be very effective and promising, as it is expected to be applicable to a large variety of different molecular radicals.

6.
J Phys Condens Matter ; 23(1): 015903, 2011 Jan 12.
Artigo em Inglês | MEDLINE | ID: mdl-21406830

RESUMO

We present an experimental investigation regarding the changes induced by the Ge doping level on the emission profile of the germanium lone pair center (GLPC) in Ge doped silica. The investigated samples have been produced by the sol-gel method and by plasma-activated chemical vapor deposition and have doping levels up to 20% by weight. The recorded photoluminescence spectra show that the GLPC emission profile is the same when the Ge content is lower than ∼ 1% by weight, whereas it changes for higher doping levels. We have also performed Raman scattering measurements that show the decrease of the D1 Raman band at 490 cm( - 1) when the Ge content is higher than 1% by weight. The data suggest that both changes can be related to matrix modifications. These findings improve our knowledge of the matrix effects on the physical properties of the point defects and, in particular, for the GLPC they show that variations in their emission properties are induced by the presence of a second Ge atom close to the defect within a sphere with a radius of about 2 nm.

7.
J Phys Condens Matter ; 22(25): 255403, 2010 Jun 30.
Artigo em Inglês | MEDLINE | ID: mdl-21393799

RESUMO

In a recent work (Buscarino et al 2009 Phys. Rev. B 80 094202), by studying the properties of the (29)Si hyperfine structure of the E'(γ) point defect, we have proposed a model able to describe quantitatively the densification process taking place upon electron irradiation in amorphous SiO(2) (a-SiO(2)). In particular, we have shown that it proceeds heterogeneously, through the nucleation of confined densified regions statistically dispersed into the whole volume of the material. In the present experimental investigation, by using a similar approach on a wider set of materials, we explore how this process is influenced by impurities, such as OH and Cl, typically involved in relevant concentrations in commercial materials. Our results indicate that the degree of local densification within the structurally modified regions is influenced by the OH content of the material: the higher the OH content, the lower the local degree of densification of the irradiated materials. In contrast, no relevant contribution to the densification process induced by electron irradiation in a-SiO(2) can be ascribed to Cl impurities up to [Formula: see text] ppm by weight.

8.
Opt Express ; 16(7): 4895-900, 2008 Mar 31.
Artigo em Inglês | MEDLINE | ID: mdl-18542589

RESUMO

We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern writing through ionizing radiation.


Assuntos
Desenho Assistido por Computador , Tecnologia de Fibra Óptica/instrumentação , Germânio/química , Germânio/efeitos da radiação , Iluminação/instrumentação , Modelos Teóricos , Dióxido de Silício/química , Dióxido de Silício/efeitos da radiação , Simulação por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Raios gama
9.
Phys Rev Lett ; 97(13): 135502, 2006 Sep 29.
Artigo em Inglês | MEDLINE | ID: mdl-17026043

RESUMO

We report a study by electron paramagnetic resonance on the E'(alpha) point defect in amorphous silicon dioxide (a-SiO(2)). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the (29)Si hyperfine structure of the E'(alpha) consists of a pair of lines split by approximately 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E'(alpha) center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp(3) orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO(2) matrix.

10.
Phys Rev Lett ; 94(12): 125501, 2005 Apr 01.
Artigo em Inglês | MEDLINE | ID: mdl-15903928

RESUMO

We report an experimental study by electron paramagnetic resonance (EPR) of E(')(delta) point defect induced by gamma-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR spectrum of such a defect arising from hyperfine interaction of the unpaired electron with a 29Si (I=1/2) nucleus. Moreover, determining the intensity ratio between this hyperfine doublet and the main resonance line of E(')(delta) center, we pointed out that the unpaired electron wave function of this center is actually delocalized over four nearly equivalent silicon atoms.

11.
J Phys Condens Matter ; 8(38): L545-9, 1996 Sep 16.
Artigo em Inglês | MEDLINE | ID: mdl-22146479

RESUMO

We report experimental results on the spectral properties and time behaviour of the 4.4 eV photoluminescence (PL) band in oxygen-deficient silica [Formula: see text]. Our measurements, performed both at T = 300 K and T = 10 K, show that at room temperature the PL features are independent of the particular excitation energy (5.0 eV, 6.8 eV and 7.6 eV) whereas at low temperature, upon excitation at 7.6 eV, the decay of the PL emission is faster than for lower excitation energies. This shortening of the PL lifetime is consistent with previously reported data, which were explained by hypothesizing an interconversion mechanism between two structural configurations of the same oxygen defect. Nevertheless, our results do not support the proposed mechanism and we tentatively suggest a different interpretation of the experimental data.

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