Shear-induced chemical segregation in a Fe-based bulk metallic glass at room temperature.

Shear-induced segregation, by particle size, is known in the flow of colloids and granular media, but is unexpected at the atomic level in the deformation of solid materials, especially at room temperature. In nanoscale wear tests of an Fe-based bulk metallic glass at room temperature, without significant surface heating, we find that intense shear localization under a scanned indenter tip can induce strong segregation of a dilute large-atom solute (Y) to planar regions that then crystallize as a Y-rich solid solution. There is stiffening of the material, and the underlying chemical and structural effects are characterized by transmission electron microscopy. The key influence of the soft Fe-Y interatomic interaction is investigated by ab-initio calculation. The driving force for the induced segregation, and its mechanisms, are considered by comparison with effects in other sheared media.

Novel electrical transport properties of native Fe-Nb oxide layers leading to unilateral conductivity of a refractory metallic glass.

Fe-based metallic glasses (also called amorphous alloys) are known to have high hardness and high wear resistance. Here we study and present a Fe-Nb amorphous material with an unusual type of electrical conductivity behavior. The electrical transport properties of Fe-Nb oxide layers were studied by measuring local current-voltage characteristics by the atomic-force microscopy technique. At certain voltage levels the samples containing native oxides showed clearly asymmetrical conductivity relative to polarity of the applied potential. Fe-Nb metallic glassy surface oxide film growth process was monitored at ambient conditions. The growth rate keeps constant during the initial 2.5 hours. After that the growth rate drastically decreases and becomes almost zero while the final oxide thickness is 1.0-1.5 nm. The Fe-Nb film sample annealed for 15 minutes at 300 °C demonstrates several times larger oxide thickness and becomes an insulator. X-ray photoelectron spectroscopy was used to characterize the oxidation states in the surface amorphous oxides. This material can be readily applied as inexpensive nanoscale tunnel diode operating at the commonly utilized voltage of ±5 V.

Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor.

We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10-3e/Hz-1/2 at room temperature.

Sequential reduction of the silicon single-electron transistor structure to atomic scale.

Here we present an original CMOS compatible fabrication method of a single-electron transistor structure with extremely small islands, formed by solitary phosphorus dopants in the silicon nanobridge. Its key feature is the controllable size reduction of the nanobridge in sequential cycles of low energy isotropic reactive ion etching that results in a decreased number of active charge centers (dopants) in the nanobridge from hundreds to a single one. Electron transport through the individual phosphorous dopants in the silicon lattice was studied. The final transistor structure demonstrates a Coulomb blockade voltage of ∼30 mV and nanobridge size estimated as [Formula: see text]. Analysis of current stability diagrams shows that electron transport in samples after the final etching stage had a single-electron nature and was carried through three phosphorus atoms. The fabrication method of the demonstrated structure allows it to be modified further by various impurities in additional etching and implantation cycles.

Correlative light and electron microscopy using cathodoluminescence from nanoparticles with distinguishable colours.

Correlative light and electron microscopy promises to combine molecular specificity with nanoscale imaging resolution. However, there are substantial technical challenges including reliable co-registration of optical and electron images, and rapid optical signal degradation under electron beam irradiation. Here, we introduce a new approach to solve these problems: imaging of stable optical cathodoluminescence emitted in a scanning electron microscope by nanoparticles with controllable surface chemistry. We demonstrate well-correlated cathodoluminescence and secondary electron images using three species of semiconductor nanoparticles that contain defects providing stable, spectrally-distinguishable cathodoluminescence. We also demonstrate reliable surface functionalization of the particles. The results pave the way for the use of such nanoparticles for targeted labeling of surfaces to provide nanoscale mapping of molecular composition, indicated by cathodoluminescence colour, simultaneously acquired with structural electron images in a single instrument.

Quantum entanglement between an optical photon and a solid-state spin qubit.

Quantum entanglement is among the most fascinating aspects of quantum theory. Entangled optical photons are now widely used for fundamental tests of quantum mechanics and applications such as quantum cryptography. Several recent experiments demonstrated entanglement of optical photons with trapped ions, atoms and atomic ensembles, which are then used to connect remote long-term memory nodes in distributed quantum networks. Here we realize quantum entanglement between the polarization of a single optical photon and a solid-state qubit associated with the single electronic spin of a nitrogen vacancy centre in diamond. Our experimental entanglement verification uses the quantum eraser technique, and demonstrates that a high degree of control over interactions between a solid-state qubit and the quantum light field can be achieved. The reported entanglement source can be used in studies of fundamental quantum phenomena and provides a key building block for the solid-state realization of quantum optical networks.

Vibrationally resolved fluorescence from organic molecules near metal surfaces in a scanning tunneling microscope.

Intrinsic molecular fluorescence from porphyrin molecules on Au(100) has been realized by using a nanoscale multimonolayer decoupling approach with nanoprobe excitation in the tunneling regime. The molecular origin of luminescence is established by the observed well-defined vibrationally resolved fluorescence spectra. The molecules fluoresce at low "turn-on" voltages for both bias polarities, suggesting an excitation mechanism via hot electron injection from either tip or substrate. The excited molecules decay radiatively through Franck-Condon pi(*)-pi transitions.

STM study of morphology and electron transport features in cytochrome c and nanocluster molecule monolayers.

The morphology and electron tunneling through single cytochrome c and nanocluster Pt(5)(CO)(7)[P(C(6)H(5))](4) molecules organized as monolayer Langmuir-Blodgett (LB) films on graphite substrate have been studied experimentally using scanning tunneling microscopy (STM) and spectroscopy techniques with sub-nanometer spatial resolution in a double barrier tunnel junction configuration STM tip-monomolecular film-conducting substrate at ambient conditions. STM images of the films revealed globular structures with characteristic diameters (approximately 3.5 nm for the protein molecule and approximately 1.2 nm for the nanocluster). The spectroscopic study by recording the tunneling current-bias voltage (I-V) curves revealed tunneling I-V characteristics with features as steps of different width and heights that are dependent on the STM tip position over the molecule in the monolayer, giving evidence for sequential discrete electron-tunneling effects with the combination of the single electron Coulomb-charging energy and the electronic energy level separation (molecular spectrum) in such immobilized metalloprotein and nanocluster structures that can be of interest for the development of bioelectronic and hybrid functional nanosystems.